1. Electron-irradiation-induced crystallization at metallic amorphous/silicon oxide interfaces caused by electronic excitation.
- Author
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Takeshi Nagase, Ryo Yamashita, and Jung-Goo Lee
- Subjects
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AMORPHOUS substances , *IRRADIATION , *CRYSTALLIZATION , *SILICON oxide , *INTERFACES (Physical sciences) , *ELECTRONIC excitation - Abstract
Irradiation-induced crystallization of an amorphous phase was stimulated at a Pd-Si amorphous/silicon oxide (a(Pd-Si)/SiOx) interface at 298K by electron irradiation at acceleration voltages ranging between 25 kV and 200 kV. Under irradiation, a Pd-Si amorphous phase was initially formed at the crystalline face-centered cubic palladium/silicon oxide (Pd/SiOx) interface, followed by the formation of a Pd2Si intermetallic compound through irradiation-induced crystallization. The irradiation-induced crystallization can be considered to be stimulated not by defect introduction through the electron knock-on effects and electron-beam heating, but by the electronic excitation mechanism. The observed irradiation-induced structural change at the a(Pd-Si)/SiOx and Pd/SiOx interfaces indicates multiple structural modifications at the metal/silicon oxide interfaces through electronic excitation induced by the electron-beam processes. [ABSTRACT FROM AUTHOR]
- Published
- 2016
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