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A new low‐power and high‐speed multiplier is presented based on the voltage over scaling (VOS) technique and new 5:3 and 7:3 counter cells. The VOS reduces power consumption in digital circuits, but different voltage levels of the VOS increase the delay in different stages of a multiplier. Hence, the proposed counters are implemented by the gate‐diffusion input technique to solve the speed limitation of the VOS‐based circuits. The proposed GDI‐based 5:3 and 7:3 counters save power and reduce the area by 2x and 2.5x, respectively. To prevent the threshold voltage (Vth) drop in the suggested GDI‐based circuits, carbon nanotube field‐effect transistor (CNTFET) technology is used. In the counters, the chirality vector and tubes of the CNTFETs are properly adjusted to attain full‐swing outputs with high driving capability. Also, their validation against heat distribution under different time intervals, as a major issue in the CNTFET technology is investigated, and their very low sensitivity is confirmed. The low complexity, high stability and efficient performance of the presented counter cells introduce the proposed VOS‐CNTFET‐GDI‐based multiplier as an alternative to the previous designs. [ABSTRACT FROM AUTHOR]

Summary: The performance of the programmable integrated circuits (ICs) like digital signal processors (DSPs), central processing units (CPUs), and microcontrollers is highly dependent on the magnitude comparators. This article presents a new reliable and efficient 1‐bit comparator based on carbon nanotube field‐effect transistors (CNTFETs) technology. The gate diffusion input (GDI) technique is used to reduce the number of transistors. Also, single swing restoration (SR) transistors and transmission gate (TG) techniques are combined to attain full‐swing outputs with high driving capability. The low internal capacitances and the fewer number of internal nodes of the proposed comparator make it low‐power both in single‐bit and multibit (2‐bit, 4‐bit, 8‐bit, and 16‐bit) implementations. Variations analyses of the circuit and technology parameters are performed that show the cell efficiency. From the layout results, the 1‐bit and 16‐bit comparators occupy 0.1944 μm2 and 37.485 μm2 as the total die area, respectively. The proposed circuit is implemented in image processing in which the best performance compared with state‐of‐the‐art designs regarding hardware complexity, circuitry performance, and image quality assessments are confirmed, by at least 50% improvements of different critical parameters. The resulted figure of merits nominates the cell for future ICs. [ABSTRACT FROM AUTHOR]

Size reduction in complementary metal–oxide–semiconductor integrated circuits (ICs) is a challenge. Carbon nanotube field effect transistor (CNTFET) technology with advantages such as low power, high mobility, and ballistic transmissions is an alternative. Based on the standard 32 nm CNTFET technology, a new 23-transistor full adder cell is proposed with combining advantages of gate diffusion input and transmission gate techniques, which are low power and full swing. Owing to small number of transistors and internal nodes, the delay time and activity factor decreased to 13.5τ. Simulations of critical parameters variations like VDD, temperature, and fan-out expose better performance of the proposed cell. Investigating the process voltage temperature with Monte Carlo simulation verified better stability, immunity, and tolerability of the cell in comparison with well-known full adder cells. Suggested full adder cell was implemented in 4:2 compressor with 9.0298 fJ of power delay product and minimum area occupation among the references. Based on real chip measurements, total die area occupation for proposed full adder and compressor is 0.505 µm2 and 1.092 µm2, respectively. Proposed circuits were applied to an 8-bit subtractor for orthopantomogram image processing to detect tooth core build up and restored with dental filling in order to maintain a crown restoration. Merits of proposed circuits both in IC design and image processing make these circuits suitable choice for bioelectronics chips. [ABSTRACT FROM AUTHOR]

• Using the carbon nanotube field-effect transistors technology to design approximate arithmetic circuits. • The gate diffusion input and dynamic threshold techniques are integrated to attain efficient circuits. • The presented approximate full adders show reliable performance during image processing. • The approximate full adders applied in bioimage processing. • Fat and water can be detected in bioimages by the presented approximate cells. Two new approximate full adders (FAs) are proposed by the multiplexers (MUXs) and OR gates with the gate diffusion input (GDI) technique. The cells are named GDI-based MUX approximate FAs (GMAFAs), GMAFA1, and GMAFA2. The threshold voltage drop of the GDI-based circuits is solved by carbon nanotube field-effect transistors (CNTFETs) technology and the dynamic threshold (DT) technique. The FAs have accurate C out , approximate Sum, and a low number of transistors. They are low-power, high-speed, and energy-efficient for ripple-carry adders (RCAs). The GMAFA1 and GMAFA2 have a total area of 0.068 µm2 and 0.119 µm2, respectively, which demonstrate 27.8% and 54.55% improvement in power-delay-area-product (PDAP) in comparison with the best references. The results of error distance (ED), normalized mean error distance (NMED), power signal-to-noise ratio (PSNR), and energy-saving confirm the accuracy of the presented cells for image processing applications. [Display omitted] [ABSTRACT FROM AUTHOR]

A new 1-bit digital comparator named 14T-SR-GDI is presented with gate-diffusion-input (GDI) and single-swing-restoration (SR) techniques to attain internal gates with high driving capability. The comparator has 14 transistors which produce full-swing outputs with low power consumption. In the 14T-SR-GDI, boosted inner signals are used to activate the output gates which result in a high-speed circuit with effective scalability and the enhanced driving capability for multi-bit structures. The comparator has a low power delay product (PDP) due to the small numbers of internal nodes and capacitances and efficient power-ground-free gates. The 14T-SR-GDI comparator, fully SR-GDI-based AND, and OR gates, construct a new tree structure for multi-bit magnitude comparators including 2-bit, 4-bit, 8-bit, and 16-bit comparators. The proposed 1-bit comparator is used in image processing for difference detection, and its efficiency is proved by image quality parameters. The post-layout simulations are performed for the 1-bit to 16-bit structures under TSMC 90 nm technology. The extracted results express a PDP with an average difference of 9.59% between the regular and post-layout modes. Also, the proposed 16-bit comparator is embedded in a pad with a total area of 4331.25 μm2. The designed magnitude comparators are key components in digital signal processors (DSPs). [ABSTRACT FROM AUTHOR]

Integrated circuits (ICs) employ static and dynamic logic to improve performance and scalability. This paper presents a new circuit design approach named pseudo-dynamic logic (PDL), which shows the advantages of both static and dynamic cells. The PDL is evaluated by using a new full adder cell with 18 transistors. In the presented full adder, gate diffusion input (GDI), transmission gate (TG), and float techniques are combined, and pull-up or pull-down networks are changed into a new configuration so that the number of transistors and internal nodes will decrease. Post-layout simulations and digital image addition are performed to evaluate the real environment and practical application of the cell. Peak signal to noise ratio (PSNR), mean square error (MSE), and structural similarity index metric (SSIM) are calculated to study the cell performance in image processing. Compared to the dynamic and static circuits, the proposed PDL-based full adder cell performs better, and the results validate its effectiveness. [ABSTRACT FROM AUTHOR]

In this work, CNTFET-based GDI (CNT-GDI) and QCA-based GDI (QCA-GDI) methods (CNT/QCA-GDI) for designing unique ultra-efficient analogue and logical blocks in voltage-mode fuzzy and quantum systems are presented. Extensive Monte-Carlo simulations by using Synopsys H-SPICE simulator at 16 nm technology demonstrate that the analogue blocks improve considerably in term of performance, absolute error and energy consumption in the presence of compact variations in compared to their counterparts. Also, the logical blocks have advantages including fast response, high polarity and lower power-consumption achieved by the QCADesigner and QCAPro tools at 18 nm in contrast to the similar designs. As applications, the half wave rectifier (HWR) and full-wave rectifier (FWR) by employing the proposed methods in two technologies are implemented. The results show improvement for the proposed circuits with correct function and very high robustness under major variations in contrast to state-of-the art rectifier architectures at similar conditions. Consequently, the proposed methods are appropriate for designing integrated circuits (ICs) with higher capacity and energy-efficient for the emerging nano-technologies. [ABSTRACT FROM AUTHOR]

Different digital multipliers have resulted from various algorithms and hardware designs. This article presents a high-performance multiplier by a novel AND gate and a modified hybrid full adder (FA) cell. The AND is designed by using the pass transistor logic (PTL) technique and a speed-up transistor, while the FA is based on the transmission gate (TG). Low-power, high-speed, low power-delay-product (PDP), and high competency of both circuits for using in sophisticated structures like multipliers are confirmed by mathematical relations. The proposed 4-bit array multiplier circuit along with the pad has a 2.87 mm2 total area and is investigated under different circumstances including V DD , frequency, load capacitances, and process-voltage-temperature (PVT) variations using Monte Carlo method (MCM) by HSPICE tool and 90 nm technology. The efficiency of the multiplier in image processing applications is proved with average improvements of 12.61% and 32.045% for peak signal-to-noise ratio (PSNR) and PDP compared to state-of-the-art designs, respectively. The overall results of the multiplier approve its capability for digital signal processors (DSPs). [ABSTRACT FROM AUTHOR]

Gate diffusion input (GDI) method using a simple cell makes it possible to design low-power logic gates with reduced chip area and less complexity. In this work, a novel design of single-bit optimized reversible logic-based magnitude arithmetic unit (RMAU) circuit, using appropriate standard reversible gates with carbon nanotube (CNT) field-effect transistors (CNTFETs), based on modified-GDI (m-GDI) method for nanoscales is presented. In order to optimize the performance of the proposed circuit, and to achieve minimum power consumption and propagation delay, transistor sizes are adjusted using the non-dominated sorting genetic algorithm II (NSGA-II) in MATLAB tool. The simulation results show improvement in evaluating the figure of merits in worst-case delay and power consumption of the proposed optimized arithmetic unit, in comparison with a non-optimized RMAU circuit using a similar design method but counterpart structures. The effects of different process parameters (such as the diameter of CNTs) and voltage and temperature (PVT) variations are extensively evaluated by the Monte Carlo procedure in standard 32 nm technology utilizing the Synopsys HSPICE simulator. According to the outcomes obtained, the proposed optimized RMAU circuit is robust against PVT variations and noise-tolerable criterions, compared to those competitors with similar design in non-optimized conditions. The proposed optimized and non-optimized circuits were used in image processing as real environment assessments, and results depicted their excellent ability in being implemented in various large reversible-based applications, such as future generations of FPGA chips and CNTFET-based computers. [ABSTRACT FROM AUTHOR]

Here, a new 4:2 approximate compressor is presented by the gate diffusion input (GDI) technique. Although GDI cells suffer from threshold voltage drop, the dynamic threshold approach and carbon nanotube field‐effect transistors are merged to overcome the mentioned problem. The proposed cell has full‐swing outputs, while its error and power delay product are at low rates. Therefore, low voltage multipliers that are used in image processing can benefit from the proposed compressor. [ABSTRACT FROM AUTHOR]