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3 results on '"Scandiuzzo, Mauro"'

1. Low-Noise Avalanche Photodiode in Standard 0.35-μm CMOS Technology.

Author

Pancheri, Lucio, Scandiuzzo, Mauro, Stoppa, David, and Dalla Betta, Gian-Franco

Subjects
*COMPLEMENTARY metal oxide semiconductors, *DIGITAL electronics, *LOGIC circuits, *TRANSISTOR-transistor logic circuits, *ELECTROOPTICAL devices, *INTEGRATED optics
Abstract

In this paper, we report on an Avalanche Photodiode (APD) fabricated in a standard 0.35-μm CMOS technology. The main electrooptical characteristics of the device are presented, showing a remarkably tow-noise factor if compared to other CMOS APDs. An estimation of the noise properties of a pixel based on the proposed photodiode with charge-amplifier readout is performed, showing that it could have an improved noise performance with respect to a standard photodiode-based pixel. [ABSTRACT FROM AUTHOR]

Published
2008
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2. A silicon metal-semiconductor-metal photodetector macromodel for circuit simulations

Author

Pancheri, Lucio, Scandiuzzo, Mauro, Betta, Gian-Franco Dalla, Stoppa, David, Nisi, Fabrizio De, Gonzo, Lorenzo, and Simoni, Andrea

Subjects
*SEMICONDUCTOR industry, *ELECTRONIC industries, *PHOTOCHEMISTRY, *PHYSICAL & theoretical chemistry
Abstract

Abstract: In this paper, numerical device simulations are used to get insight into the DC and dynamic behavior of a CMOS metal-semiconductor-metal photodetector, to be used as a mixing device for active pixels based on a differential read-out concept. On the basis of simulation results, a simple electrical macromodel of the photosensor has been defined and implemented in the Cadence package using Spectre AHDL. The proposed macromodel is shown to accurately reproduce the numerical device simulation predictions in all the considered operation modes. [Copyright &y& Elsevier]

Published
2005
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3. A CMOS 3-D Imager Based on Single Photon Avalanche Diode.

Author

Stoppa, David, Pancheri, Lucio, Scandiuzzo, Mauro, Gonzo, Lorenzo, Betta, Gian-Franco Dalla, and Simoni, Andrea

Subjects
*COMPLEMENTARY metal oxide semiconductors, *AVALANCHE diodes, *PHOTODIODES, *ELECTRIC potential, *PHOTONS, *DIGITAL electronics
Abstract

A 64-pixel linear array aimed at 3-D vision applications is implemented in a high-voltage 0.8 μm CMOS technology. The detection of the incident light signals is performed using photodiodes biased above breakdown voltage so that an extremely high sensitivity can be achieved exploiting the intrinsic multiplication effect of the avalanche phenomenon. Each 38 × 180-μm² pixel includes, besides the single photon avalanche diode, a dedicated read-out circuit for the arrival-time estimation of incident light pulses. To increase the distance measurement resolution a multiple pulse measurement is used, extracting the mean value of the light pulse arrival-time directly in each pixel; this innovative approach dramatically reduces the dead-time of the pixel read-out, allowing a high frame rate imaging to be achieved. The sensor array provides a range map from 2 m to 5 m with a precision better than ±0.75% without any external averaging operation. Moreover, with the same chip, we have explored for the first time the implementation of an indirect time-of-flight measurement by operating the proposed active pixel in the photon counting mode. [ABSTRACT FROM AUTHOR]

Published
2007
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