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We report studies on the nanoscale transport dynamics of carriers in strained AlN/GaN/AlN quantum wells: an electron-hole bilayer charge system with a large difference in transport properties between charge layers. From electronic band diagram analysis, the presence of spatially separated two-dimensional electron and hole charge layers is predicted at opposite interfaces. Since these charge layers exhibit distinct spectral signatures at terahertz frequencies, a combination of terahertz and far-infrared spectroscopy enables us to extract (a) individual contributions to the total conductivity and (b) effective scattering rates for charge-carriers in each layer. Furthermore, by comparing direct-current and THz-extracted conductivity levels, we are able to determine the extent to which structural defects affect charge transport. Our results evidence that (i) a non-unity Hall-factor and (ii) the considerable contribution of holes to the overall conductivity lead to a lower apparent mobility in Hall-effect measurements. Overall, our work demonstrates that terahertz spectroscopy is a suitable technique for studying bilayer charge systems with large differences in transport properties between layers such as quantum wells in III-nitride semiconductors. [ABSTRACT FROM AUTHOR]

In this work, signatures of plasma waves in GaN-based high electron mobility transistors were observed by direct electrical measurement at room temperature. Periodic grating-gate device structures were fabricated and characterized by on-wafer G-band (140-220 GHz) s-parameter measurements as a function of gate bias voltage and device geometry. A physics-based equivalent circuit model was used to assist in interpreting the measured s-parameters. The kinetic inductance extracted from the measurement data matches well with theoretical predictions, consistent with direct observation of plasma wave-related effects in GaN-channel devices at room temperature. This observation of electrically significant room-temperature plasma-wave effects in GaN-channel devices may have implications for future millimeter-wave and THz device concepts and designs. [ABSTRACT FROM AUTHOR]