1. Response of Integrated Silicon Microwave pin Diodes to X-Ray and Fast-Neutron Irradiation.
- Author
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Teng, Jeffrey W., Nergui, Delgermaa, Parameswaran, Hari, Sepulveda-Ramos, Nelson E., Tzintzarov, George N., Mensah, Yaw, Cheon, Clifford D., Rao, Sunil G., Ringel, Brett, Gorchichko, Mariia, Li, Kan, Ying, Hanbin, Ildefonso, Adrian, Dodds, Nathaniel A., Nowlin, R. Nathan, Zhang, En Xia, Fleetwood, Daniel M., and Cressler, John D.
- Subjects
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PIN diodes , *GEOSTATIONARY satellites , *FAST neutrons , *METEOROLOGICAL satellites , *X-rays , *IRRADIATION - Abstract
Integrated silicon microwave pin diodes are exposed to 10-keV X-rays up to a dose of 2 Mrad(SiO2) and 14-MeV fast neutrons up to a fluence of $2.2\,\,\boldsymbol {\times }\,\,10\,\,^{\mathrm{ 13}}$ cm−2. Changes in both dc leakage current and small-signal circuit components are examined. Degradation in performance due to total-ionizing dose (TID) is shown to be suppressed by non-quasi-static (NQS) effects during radio frequency (RF) operation. Tolerance to displacement damage from fast neutrons is also observed, which is explained using technology computer-aided design (TCAD) simulations. Overall, the characterized pin diodes are tolerant to cumulative radiation at levels consistent with space applications such as geosynchronous weather satellites. [ABSTRACT FROM AUTHOR]
- Published
- 2022
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