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This article proposes a new complete condition monitoring method which can independently monitor both the threshold voltage drift and the packaging degradation accurately by monitoring only the reverse body diode voltage drop at different gate bias levels. The SiC MOSFETs are aged through an accelerated aging method and the corresponding changes in electrical parameters are periodically measured to assess their correlation with the state of the device's health. It has been revealed that the on-state resistance reveals the combination of gate oxide and package-related degradation while the threshold voltage mainly depicts gate oxide-related issues. Unlike these two parameters, the body diode voltage drop is found to independently indicate the state of device health both for package and gate oxide. This is caused by a unique secondary conduction mode of SiC MOSFETs in third-quadrant operation which is clearly disclosed with transition boundaries by a proposed body diode transfer characterization curve. In order to have a detailed condition information of the device with a simple circuit, monitoring the reverse body diode voltage drop at 0 and $-$ 5 V gate bias is proposed. The proposed condition monitoring method is implemented on a gate drive circuit and experimental results are given for two artificially degraded devices. The experimental results confirm that the proposed method can independently monitor both the gate oxide and packaging degradations accurately by monitoring a single precursor parameter. The proposed method can be integrated into the gate driver or converter itself to monitor SiC devices. [ABSTRACT FROM AUTHOR]

This paper presents an silicon carbide (SiC) MOSFET health condition monitoring method based on the switching transient measurements. Specifically, the device's turn-on time is used as the aging precursor, and a detection circuit is developed with picosecond resolution to detect the variations of the turn-on time. For this purpose, power cycles with constant junction temperature swings are applied on sample devices to accelerate their thermally triggered degradation. Over the aging process, device parameters are measured periodically using automated curve tracer to observe degradation-related changes. Also, a double pulse tester is used to evaluate devices’ switching transient changes throughout aging. Based on these results, both the theoretical discussions and experimental results imply that device turn-on time is a viable aging precursor and can be used to monitor device health at system start-up. High-resolution capture module of readily available system microcontroller is employed to measure the turn-on time through a simple auxiliary interface circuit on a buck converter. Experimental results show that onboard device aging can successfully be achieved during systems start-up in the order of microseconds. [ABSTRACT FROM AUTHOR]

The temperature-sensitive electrical parameters (TSEPs) have been used in silicon carbide (SiC) mosfets junction temperature measurement for over-temperature protection and condition monitoring. However, the device aging can affect the TSEPs and thus leads to false ${\boldsymbol{T}}_{\boldsymbol{j}}$ measurement. In this article, the aging's impacts on various TSEPs are comprehensively investigated. Specifically, utilizing the dc power cycling test, both the gate oxide instability and package degradation are considered. Then the commercial devices with different structures are aged, and their temperature-dependent static and switching characteristics are evaluated at different aging cycles. Both the positive gate bias-induced threshold voltage shift and package degradation are observed, and their impacts on each TSEP are evaluated independently. Based on the evaluation results at various operating conditions, the temperature measurement errors due to different aging mechanisms are well summarized for each TSEP. From the dc power cycling test result, the package degradation's impact on TSEPs is found to be more significant than the gate oxide instability. It is pointed out that the aging's effect on TSEPs is an important factor that needs to be considered for accurate ${\boldsymbol{T}}_{\boldsymbol{j}}$ measurement in SiC mosfets. [ABSTRACT FROM AUTHOR]

Silicon carbide (SiC) power mosfets are promising alternatives to Si devices in high-voltage, high-frequency, and high-temperature applications. The rapid and widespread deployment of SiC devices raises long-term reliability concerns, particularly for mission and safety critical systems due to limited field data and potential uncertainties. Therefore, it is essential to investigate progressive degradations and parameter shifts in SiC devices to develop system integrated degradation monitoring tools for self-monitoring converters, which can recognize failure precursors at the earliest stage and prevent catastrophic failures. This paper presents a comprehensive long-term reliability analysis of commercially available SiC mosfets under high temperature operation and high temperature swing, degradation related key precursors, and possible causes behind them. For this purpose, discrete SiC devices are power cycled and all datasheet parameters are recorded at certain intervals with the aid of the curve tracer. Variation of electrical parameters throughout the tests is presented in order to assess their correlation with the aging/degradation state of the switch. Among them, gate oxide charge trapping related threshold voltage drift and corresponding on state resistance variation has been observed for all samples. For some samples, bond wire heel cracking is found to be the root cause of sudden on state resistance and body diode voltage increases. The discussions regarding aging precursors are supported by failure analysis obtained through the decapsulation of failed devices. Finally, the findings are evaluated in order to define the suitability of electrical parameters as an aging precursor parameter under the light of practical implementation related issues. [ABSTRACT FROM AUTHOR]

This paper presents a comprehensive study on degradation monitoring of silicon carbide mosfets and proposes an early warning method to detect aging. The proposed plug-in tool can be integrated to smart gate drivers or directly to power converters. During the accelerated aging tests (power cycling within safe operating area), several electrical parameters are monitored to find out critical signatures and precursors of failure. Among those, gate leakage current is identified as the most practical precursor, which exhibits consistent changes in all aged devices and is relatively easy to monitor. Due to its simple scheme and low cost, it can potentially be embedded into commercial gate drivers featuring improved reliability options. [ABSTRACT FROM AUTHOR]

Today, power conversion in automotive industry depends heavily on the reliable operation of insulated-gate bipolar transistors (IGBTs). Condition monitoring of IGBTs and reporting imminent faults to driver dashboard are critical for avoiding any fatal accidents. In this study, first, a comprehensive comparison is carried out between on-state collector–emitter drop ($V_{ce,on}$) with gate threshold voltage (Vth), as two reliable aging precursors. In order to enrich current understanding of IGBT aging prognosis, accelerated aging methods are applied under a wide variety of thermal stresses. Aging mechanisms and physical phenomena responsible for variation in both $V_{ce,on}$ and Vth have been methodically investigated. These explanations are also supported by detailed failure analysis. Based on the extensive result sets for tested samples from different manufacturers with different structural types, it is found that $V_{ce,on}$ show different trends at different stress levels, whereas under the same test conditions Vth provides more consistent and robust state-of-health information. Finally, an example experiment has been performed in which continuous $V_{ce,on}$ measurements coupled with Vth information has been used to provide more insight about the device aging as well as faults in an automobile's sub-systems. [ABSTRACT FROM AUTHOR]

Liquid-liquid phase separation (LLPS) mediated formation of membraneless organelles has been proposed to coordinate biological processes in space and time. Previously, the formation of phase-separated droplets was described as a unique property of HP1α. Here, we demonstrate that the positive net charge of the intrinsically disordered hinge region (IDR-H) of HP1 proteins is critical for phase separation and that the exchange of four acidic amino acids is sufficient to confer LLPS properties to HP1β. Surprisingly, the addition of mono-nucleosomes promoted H3K9me3-dependent LLPS of HP1β which could be specifically disrupted with methylated but not acetylated H3K9 peptides. HP1β mutants defective in H3K9me3 binding were less efficient in phase separationin vitro and failed to accumulate at heterochromatin in vivo. We propose that multivalent interactions of HP1β with H3K9me3-modified nucleosomes via its chromodomain and dimerization via its chromoshadow domain enable phase separation and contribute to the formation of heterochromatin compartments in vivo. [ABSTRACT FROM AUTHOR]

Cytosine DNA bases can be methylated by DNA methyltransferases and subsequently oxidized by TET proteins. The resulting 5-hydroxymethylcytosine (5hmC), 5-formylcytosine (5fC), and 5-carboxylcytosine (5caC) are considered demethylation intermediates as well as stable epigenetic marks. To dissect the contributions of these cytosine modifying enzymes, we generated combinations of Tet knockout (KO) embryonic stem cells (ESCs) and systematically measured protein and DNA modification levels at the transition from naive to primed pluripotency. Whereas the increase of genomic 5-methylcytosine (5mC) levels during exit from pluripotency correlated with an upregulation of the de novo DNA methyltransferases DNMT3A and DNMT3B, the subsequent oxidation steps turned out to be far more complex. The strong increase of oxidized cytosine bases (5hmC, 5fC, and 5caC) was accompanied by a drop in TET2 levels, yet the analysis of KO cells suggested that TET2 is responsible for most 5fC formation. The comparison of modified cytosine and enzyme levels in Tet KO cells revealed distinct and differentiation-dependent contributions of TET1 and TET2 to 5hmC and 5fC formation arguing against a processive mechanism of 5mC oxidation. The apparent independent steps of 5hmC and 5fC formation suggest yet to be identified mechanisms regulating TET activity that may constitute another layer of epigenetic regulation. [ABSTRACT FROM AUTHOR]

To process the power in hybrid energy systems using a reduced part count, researchers have proposed several multiinput dc–dc power converter topologies to transfer power from different input voltage sources to the output. This paper proposes a novel bidirectional nonisolated multi-input converter (MIC) topology for hybrid systems to be used in electric vehicles composed of energy storage systems (ESSs) with different electrical characteristics. The proposed converter has the ability to control the power of ESSs by allowing active power sharing. The voltage levels of utilized ESSs can be higher or lower than the output voltage. The inductors of the converter are connected to a single switch; therefore, the converter requires only one extra active switch for each input, unlike its counterparts, hence resulting in reduced element count. The proposed MIC topology is compared with its counterparts concerning various parameters. It is analyzed in detail, and then, this analysis is validated by simulation and through a 1-kW prototype based on a battery/ultracapacitor hybrid ESS. [ABSTRACT FROM PUBLISHER]

Chemotherapy resistance is the main impediment in the treatment of acute myeloid leukaemia (AML). Despite rapid advances, the various mechanisms inducing resistance development remain to be defined in detail. Here we report that loss-of-function mutations (LOF) in the histone methyltransferase EZH2 have the potential to confer resistance against the chemotherapeutic agent cytarabine. We identify seven distinct EZH2 mutations leading to loss of H3K27 trimethylation via multiple mechanisms. Analysis of matched diagnosis and relapse samples reveal a heterogenous regulation of EZH2 and a loss of EZH2 in 50% of patients. We confirm that loss of EZH2 induces resistance against cytarabine in the cell lines HEK293T and K562 as well as in a patient-derived xenograft model. Proteomics and transcriptomics analysis reveal that resistance is conferred by upregulation of multiple direct and indirect EZH2 target genes that are involved in apoptosis evasion, augmentation of proliferation and alteration of transmembrane transporter function. Our data indicate that loss of EZH2 results in upregulation of its target genes, providing the cell with a selective growth advantage, which mediates chemotherapy resistance. [ABSTRACT FROM AUTHOR]

In this article, an in situ SiC mosfet degradation monitoring method using readily available converter sensors is presented. Device's drain-source resistance in saturation and ohmic regions are employed as aging precursors to, respectively, indicate die and package-related degradations. The presented findings in this article are essential for low-cost and practical early warning systems in power electronics applications. To verify the effectiveness of the proposed method, a number of power-cycling tests are conducted to analyze aging process and fatigue mechanism. Device static parameters are measured throughout accelerated aging tests and the physical causes behind them are discussed in detail. It is shown that the drain-source resistance within saturation region at low gate bias can be used to indicate die-related degradation. Similarly, at full positive gate bias, device on-state drain-source resistance can be used to detect package-related degradation. In order to find out optimal variables such as applied gate bias, pulse duration, etc., a comprehensive single pulse test is conducted and the results are reported. Finally, the proposed degradation monitoring method is experimentally validated in the context of a three-phase inverter considering different sensor configurations and load types. [ABSTRACT FROM AUTHOR]

Photovoltaic (PV) systems are considered as a support unit and eco-friendly energy source for the electric vehicles. If the surface of the electric vehicle is covered by PV cells, it is possible to store considerable amount of energy in the battery system. In this study, different maximum power point trackers (MPPT) with different maximum power point (MPP) tracking algorithms have been tested on a PV structure moving according to a predefined motion loop. Compatibility of each algorithm to moving systems, such as electric vehicles, is presented in a real experimental environment. As a result of these experiments, positive factors in each algorithm have been defined and a new MPP tracking algorithm convenient for moving vehicle has been proposed. The proposed MPPT algorithm shows a better performance than other MPPT algorithms under fast varying radiations. However, proposed algorithm brings slightly higher costs compared to usage of other MPPT algorithms since it requires the measurement of solar irradiance. The developed algorithm is described in detail and comparative analysis and performance evaluation with other algorithms are presented. [ABSTRACT FROM AUTHOR]