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In this work, we demonstrate p-type lithium nickel oxide (LiNiO) as a heterojunction gate combined with tri-gate structures to achieve stable enhancement-mode (e-mode) AlGaN/GaN high-electron-mobility transistors. The low deposition temperature (400 °C) and high-quality LiNiO coated by pulsed-laser-deposition over tri-gate structures resulted in enhancement-mode devices without the need for special epitaxial layers, barrier recess, or barrier regrowth. The LiNiO heterojunction tri-gate devices presented a positive VTH of 0.7 V (at 1 μA/mm), a low on-resistance of 8 Ω· mm, a large maximum on-current of 390 mA/mm, a high breakdown voltage of 1270 V, and excellent reliability simultaneously. [ABSTRACT FROM AUTHOR]

Objective: To determine the role of prophylactic cranial irradiation (PCI) in non–small cell lung cancer (NSCLC) patients using meta‐analysis. Methods: PubMed, Embase, the Cochrane Database of Systematic Review and the China National Knowledge Infrastructure databases were systematically searched for studies published between 1 January 1980 and 31 March 2019. Search terms included "non–small cell lung cancer," "prophylactic cranial irradiation" and "clinical trials." The research data extracted from above studies was analyzed by Review Manager 5.3 and Stata12.0 software. The outcomes included development of brain metastases (BMs), overall survival (OS), disease‐free survival (DFS), BMs for different diagnoses, toxicity, quality of life (QoL). Results: Fifteen trials (nine RCTs and six non‐RCTs) involving 2418 NSCLC patients met the inclusion criteria. There was a significant reduction in the risk of developing BM in patients who received PCI compared with those who did not (95% CI, 0.20–0.37; P < 0.00001). PCI significantly reduced the BM of squamous cell carcinoma (P = 0.02), but not for adenocarcinoma (P = 0.07) and other pathological types (P = 0.29). There was a significant increase in DFS for the PCI compared to the non‐PCI group (P = 0.006); however, OS did not significantly differ (P = 0.15). In addition, fatigue significantly increased in the PCI group (P = 0.0002). Cognitive disturbance showed no significant difference between PCI and non‐PCI groups (P = 0.06). Conclusion: This study showed that, compared with non‐PCI, PCI significantly decreased the incidence of NSCLC BM and improved the DFS of patients, and reduced the BM rate from squamous cell carcinoma. However, it showed no effect on OS and the BM rate of adenocarcinoma and other pathological types of tumors. There were limited data concerning PCI‐related toxicity and QoL. [ABSTRACT FROM AUTHOR]

At present, the consensus on the best treatment for keloids is the combination of clinical and surgical therapies, if necessary, associated with adjuvant radiotherapy like brachytherapy. Whereas, the uniform scheme of radiotherapy in keloids is unclear. Here, we conducting a retrospective analysis to assess the efficacy and safety of a specific treatment regimen (20 Gy in 5 fractions) in keloid patients. We retrospectively analysed the medical records of keloid patients receiving auxiliary postoperative radiotherapy (PORT) treatment from 2009 to 2019. The patients were treated with the hypofractionation method of 20 Gy in 5 fractions. We compared the local control rate and complications, using the chi-square test and logistic regression analyses. After screening, we identified 100 keloid patients in this study, with a median follow-up of 59 months. In this study, the overall local control rate of keloid lesions was 84.8%. After multivariate analyses (primary keloid or not, family history, interval from surgery to irradiation and site), our research showed that primary keloid, site and interval from surgery to irradiation were significantly related to recurrence. Acute radiation injury and late radiation injury accounted for 3% (erythema) and 1% (skin sclerosis) of the total cases, respectively. Our results indicate that a postoperative hypofractionation with radiation dose of 20 Gy in 5 fractions may be effective, easy to accept and safe for keloid patients. [ABSTRACT FROM AUTHOR]

In this paper, we present a detailed investigation of the impact of fin width (${w}_{\text {fin}}$) on tri-gate AlGaN/GaN metal–oxide–semiconductor high electron mobility transistors (MOSHEMTs). As ${w}_{\text {fin}}$ is reduced, the threshold voltage (${V}_{\text {TH}}$) increases, which is due to the enhanced gate control (especially for ${w}_{\text {fin}} < {200}$ nm) thanks to the 3-D geometry of the tri-gate, and the reduced carrier concentration (${N}_{\text {s}}$) caused by a more pronounced strain relaxation and sidewall depletion, as explored using Hall and capacitance–voltage (${C}$ – ${V}$) measurements. Normally- OFF operation was achieved for ${w}_{\text {fin}}$ close to the sidewall depletion width (${w}_{\text {dep}}$) of 19.5 nm, since the fin is depleted from its two sidewalls. The impact of ${w}_{\text {fin}}$ on ON-resistance (${R} _{{{ {6{8} {\text {ON}}}}}}$) and current capability (${I} _{\text {D},\text {max}}$) was also investigated, along with the influence of the effective source injection, the trench conduction and the filling factor (FF) on these key characteristics. The degradation caused by the tri-gate fin etching could be fully recovered by increasing the FF. Finally, we show that the tri-gate can reduce gate capacitance (${C}_{\text {G}}$) and charge (${Q}_{\text {G}}$) in normally- ON MOSHEMTs, depending on the design of the tri-gate and the gate voltage (${V}_{\text {G}}$), leading to a smaller ${R}_{{{ {6{8} {\text {ON}}}}}} \cdot {Q}_{\text {G}}$ product that is beneficial for high-frequency switching applications. The results in this paper offer insights into important phenomena in tri-gate GaN devices and are fundamental for the further advance of this technology. [ABSTRACT FROM AUTHOR]