1. Growth of multicrystalline silicon assisted by electrophoretic deposited quartz.
- Author
-
Quan, Xiang, Yuan, Ningyi, Ding, Jianning, Huang, Chunlai, and Liao, Jilong
- Subjects
- *
QUARTZ , *SILICON - Abstract
Cast multicrystalline silicon (mc-Si) requires high quality at low cost, while fully-melted seed-assisted growth has a reasonable utilization rate but urges better initial grain control. An electrophoretic deposited quartz nucleation layer is introduced to obtain a uniform and oriented nucleation layer. Carrier recombination characterization, including photoluminescence and carrier lifetime mapping, shows that the density of recombination-active structural defects is reduced due to better grain distribution. The average conversion efficiency values of silicon particle, sprayed quartz, and deposited quartz assisted wafers are 20.52%, 20.48%, and 20.68%, respectively Moreover, deposited quartz assisted mc-Si can obtain oriented grains, which offers a potential to apply alkaline texturing on mc-Si wafers. [ABSTRACT FROM AUTHOR]
- Published
- 2021
- Full Text
- View/download PDF