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Dielectric capacitors prepared by antiferroelectric (AFE) materials have the advantages of large power density and fast discharge ability. It has been a focus on the improvement of the recoverable energy density (Wrec) and discharge energy–density (Wdis) in the AFE ceramics. To address the above issue, optimizing the proportion of components is proposed for enhancing ceramic antiferroelectricity, ultimately improving the breakdown strength (Eb) and Wrec. In this work, an ultrahigh Wrec (14.3 J/cm3) with an excellent energy efficiency (η) of 81.1% is obtained in (Pb0.96Sr0.02La0.02)(Hf0.9Sn0.1)O3 AFE ceramic at electric field of 490 kV/cm, which is the maximum value reported in lead-based AFE ceramics fabricated by the conventional solid-state reaction method so far. The multistage phase transition induced by the electric field is observed in the polarization–electric field (P–E) hysteresis loops. Furthermore, an outstanding power density (PD) of 335 MW/cm3 and an excellent Wdis of 8.97 J/cm3 with a rapid discharge speed (102 ns) are obtained at electric field of 390 kV/cm. In addition, (Pb0.96Sr0.02La0.02)(Hf0.9Sn0.1)O3 ceramics also possess an excellent thermal and frequency stability. These exceptional properties indicate that (Pb0.98−xSrxLa0.02)(Hf0.9Sn0.1)O3 ceramics are a potential candidate for pulsed power devices and power electronic devices. [ABSTRACT FROM AUTHOR]

Enhancing the availability and reliability of dielectric ceramic energy storage devices is of great importance. In this work, (1- x) Na 0. 5 Bi 0. 5 TiO 3 – x Bi( Mg 0. 5 Hf 0. 5 ) O 3 (NBT– x BMH) lead-free ceramics were created utilizing a solid-state reaction technique. All NBT– x BMH ceramics have a single perovskite structure. With increasing BMH doping, the grain size shrinks drastically, which greatly enhances the breakdown electric field (310 kV/cm at x = 0.25). Additionally, the relaxation behaviors of NBT– x BMH ceramics with high BMH content are more remarkable. Among all designed components, the NBT–0.25BMH ceramic exhibits the best energy storage performance with a high W rec of 4.63 J/ cm 3 and an η of 75.1% at 310 kV/cm. The NBT–0.25BMH ceramic has exceptional resistance to fluctuations in both frequency (5–500 Hz) and temperature (30–100 ∘ C). Charge–discharge test shows that the NBT–0.25BMH ceramic has a quick discharge rate ( t 0. 9 < 110 ns). With these properties, the NBT–0.25BMH ceramic may have applications in microdevices as well as in ultra-high power electronic systems. [ABSTRACT FROM AUTHOR]