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Single crystals of undoped and Nb doped sodium and potassium-bismuth titanate at the morphotropic phase boundary (MPB) composition [(Na0.41K0.09Bi0.50)TiO3: NKBT] were grown from high temperature solutions. The effect of Nb doping on the electronic property of NKBT was investigated by optical transmission and photoelectron spectroscopy (PES). The optical absorption shows that the bandgap having the lowest energy is indirect in nature and increases with the increase in the Nb concentration in the lattice. The estimated Urbach energy increases with the increase of Nb concentration signifying an increase in the disorder in the lattice on Nb doping. The PES revealed that the valence band maxima (VBM) exhibit red shift on Nb doping. It also revealed the presence of in-gap states probably due to Ti3+ defect and oxygen vacancy. Moreover, inline with the optical measurement, the PES showed that there is a decrease in the energy gap between the VBM and defect state with the Nb doping. Furthermore, the angle resolved PES measurement confirmed the presence of both the direct and indirect bandgaps in the crystal. [ABSTRACT FROM AUTHOR]

We report insights into the interface carrier-confinement-assisted dielectric and electrical properties in atomic-layer-deposited Al2O3/TiO2 nanolaminates (NLs). With progressive thinning of the sublayers down to ∼0.48 nm, the dielectric constant, polarization voltage, bang gap, and interfacial two-dimensional electron gas density of NLs improved due to the enhanced Maxwell–Wagner interfacial polarization and size-dependent quantum confinement effect. The typical current vs voltage (I–V) characteristics of NLs revealed an inherent nanobattery effect and quantum tunneling transport due to the electrical inhomogeneity and carrier confinement across sublayers, respectively. These tunable properties make these NLs a highly suitable dielectric material for various nanoelectronic applications. [ABSTRACT FROM AUTHOR]

Maxwell–Wagner relaxation dominated Al2O3/TiO2 nanolaminates (ATA NLs) have recently demonstrated their potential for high-density energy storage applications. In this report, we have unraveled the defect-mediated transport mechanisms prevailing in Al2O3/TiO2 sub-nanometric laminates. Temperature-dependent ac conductivity measurements revealed the signature of small polaron hopping in TiO2 active layers and trap-assisted tunneling transport through Al2O3 barrier layers, which was corroborated by resonant photoelectron spectroscopy and temperature-dependent current–voltage measurement. The polaronic defect states, found ∼1 eV below the Fermi level, served as the hopping centers and leakage paths for current. The signature of quantum tunneling transport and the negative differential conductance observed toward higher electric field was attributed to the splitting of delocalized minibands. These transport properties of Al2O3/TiO2 nanolaminates will help in tailoring these materials for next-generation storage capacitors. [ABSTRACT FROM AUTHOR]

We present the results of resonant photoemission spectroscopy experiments on Mo 1 − x Re x alloy compositions spanning over two electronic topological transitions (ETTs) at critical concentrations x C 1 = 0.05 and x C 2 = 0.11. Photoelectrons show an additional resonance (R 3) in constant initial state spectra of alloys along with two resonances (R 1 and R 2), which are similar to those observed in molybdenum. All the resonances show Fano-like line shapes. Asymmetry parameter q of resonances R 1 and R 3 of alloys is observed to be large and negative. Our analysis suggests that the origin of large negative q is associated with phonon assisted interband scattering between Mo-like states and the narrow band that appeared due to ETT. [ABSTRACT FROM AUTHOR]

Topological quantum phenomena due to the presence of both Dirac fermions and flat bands in Kagome semimetal CoSn promise novel transport properties. In Kagome materials, the transport properties can be enhanced by moving the position of the flat band and Dirac fermions with doping. Here, we have investigated the magnetotransport and electronic properties by Fe doping in CoSn. A large positive magnetoresistance (MR) of ≈ 105% at 3 K and 8 T magnetic field has been observed in CoSn. Fe doping in Co 1 − x FexSn gives rise to negative MR with a large negative value for x = 0.2 (−8.4%) but decreases for x = 0.3 (−3.7%) and x = 0.4 (−2.7%). Tuning of MR from positive to negative values with Fe doping in CoSn is associated with the changes in energy position of the localized flat band and emergence of quasi-localized states near the Fermi level. The systematic variation of MR with increasing x depends both on the structural changes due to increase in the lattice parameters and on the near neighbor interactions of the Sn atoms with the Co atoms in the Kagome plane. The origin of quasi-localized states is associated with the electron hopping and the variation in the strength of localization with doping that leads to tunable MR properties in Co 1 − x FexSn. [ABSTRACT FROM AUTHOR]

Photodetectors based on n‐Mg0.25Zn0.75O/p‐Si heterojunctions are not only suitable for integration with existing semiconductor technology, but also circumvent the difficulty of stable p‐type doping in MgxZn1–xO. However, the use of Si leads to photoresponse in the visible part of the light spectrum, which renders n‐MgxZn1–xO/p‐Si heterojunction devices unsuitable for visible blind UV photodetection. Herein, it is demonstrated that the visible photoresponse in the n‐Mg0.25Zn0.75O/p‐Si photodetectors can be significantly suppressed by inserting a thin interlayer of MgO at the heterojunction. The MgO layer serves as a blocking layer for the drift of photo‐excited electrons from p‐Si to n‐Mg0.25Zn0.75O, thereby limiting the visible photoresponse. It is found that on increasing the thickness of the MgO interlayer from 3 to 15 nm, the UV to visible rejection ratio increases from ≈25 to 200. This enhancement in the UV to visible rejection ratio demonstrates that n‐Mg0.25Zn0.75O/p‐Si heterojunction devices with MgO interlayer are promising for visible‐blind UV photodetection applications. [ABSTRACT FROM AUTHOR]

In the family of transition-metal dichalcogenides (TMDs), PdTe2 is well known due to its unique and unconventional topological states. Using angle-resolved photoemission spectroscopy (ARPES), we systematically studied the electronic structure of PdTe2, as confirmed by our electronic band structure calculations. The latter confirms a type-II Dirac semimetal phase with the nodal point located at 0.5 eV below the Fermi level. We have used the de Haas-van Alphen (dHvA) oscillations in the magnetization measurements on a high-quality single crystal of type-II Dirac semimetal PdTe2 to unveil its topological properties. Our findings not only contribute to a better understanding of topological band structure in PdTe2 but also help in understanding the origin of such novel states in similar materials. This study opens up the possibility of finding new class of quantum material with great significance, both from fundamental and applied fronts. [ABSTRACT FROM AUTHOR]

FeGa3 is a well known intermetallic semiconductor with a band gap, which is induced by d-p hybridization. In this work, we present the results of experimental and theoretical studies on the effect of Al substitution in FeGa3, obtained by X-ray diffraction (XRD) study, temperature dependent resistivity measurement, room temperature Mössbauer measurement, and density functional theory based electronic structure calculations. It is observed that up to x=0.178 in Fe(AlxGa1-x)3, which is the maximum range studied in this work, Al substitution reduces the lattice parameters a and c, preserving the parent tetragonal P42/mnm crystal structure of FeGa3. Rietveld refinement of the XRD data shows that Al atoms replace Ga atoms located at the 8j sites in FeGa3. A comparison of the trends of the lattice parameters and energy band gap obtained from the calculations and experimental measurements also confirms that Al atoms primarily replace the Ga atoms in the 8j site. The band gap of Fe(AlxGa1-x)3 for x=0.178 is reduced by ≈24% as compared to FeGa3. The system thus has a lot of promise for applications in band gap engineering in infra-red devices. [ABSTRACT FROM AUTHOR]

β-Ag2Se is a promising material for room temperature thermoelectric applications and magneto-resistive sensors. However, no attention was paid earlier to the hysteresis in the temperature dependence of resistivity [ρ(T)]. Here, we show that a broad hysteresis above 35 K is observed not only in ρ(T), but also in other electronic properties such as Hall coefficient [RH(T)], Seebeck coefficient, thermal conductivity, and ultraviolet photoelectron spectra (UPS). We also show that the hysteresis is not associated with a structural transition. The ρ(T) and RH(T) show that β-Ag2Se is semiconducting above 300 K, but metallicity is retained below 300 K. While electronic states are absent in the energy range from the Fermi level (EF) to 0.4 eV below the EF at 300 K, a distinct Fermi edge is observed in the UPS at 15 K suggesting that the β-Ag2Se undergoes an electronic topological transition from a high-temperature semiconducting state to a low-temperature metallic state. Our study reveals that a constant and moderately high thermoelectric figure of merit in the range 300–395 K is observed due to the broad semiconductor to metal transition in β-Ag2Se. [ABSTRACT FROM AUTHOR]

Spin chiral systems with Dzyaloshinskii–Moriya (DM) interaction due to broken inversion symmetry are extensively studied for their technological applications in spintronics and thermoelectrics. Here, we report an experimental study on the magnetization, magnetoresistance (MR) and electronic structure of a non-centrosymmetric compound CrSi with B20 crystal structure. Both magnetization and MR shows competing ferromagnetic (FM) and antiferromagnetic (AFM) correlations with the FM correlations being comparatively weaker indicating the presence of DM interaction in CrSi. A large positive MR ∼ 25 % obtained at 5 K and 5 T magnetic field arises due to the stronger AFM correlations. Resonant photoemission shows both localized and itinerant nature of Cr 3d electrons to be present in CrSi and this is supported by the temperature dependence of magnetic susceptibility. Drastic variation in the density of states along with valence band broadening at low temperature indicates the increase in hybridization between Cr 3d and Si 3s–3p states which enhances the localization effects. Spin polarized itinerant Cr 3d electrons give rise to AFM spin density wave in CrSi. Magnetic interaction between the localized and itinerant Cr 3d electrons are found to be crucial for realizing DM interaction in this system. Spectral density of states derived from high resolution valence band measurements provides evidence of electronic topological transition in CrSi. Large density of polarized itinerant electrons which varies with temperature and the large positive MR with AFM correlations suggests CrSi as a potential candidate for both the thermoelectric and spintronics applications. [ABSTRACT FROM AUTHOR]

Ca2Fe2O5 (CFO) is a potentially viable material for alternate energy applications. Incorporation of nitrogen in Ca2Fe2O5 (CFO-N) lattice modifies the optical and electronic properties to its advantage. Here, the electronic band structures of CFO and CFO-N were probed using Ultraviolet photoelectron spectroscopy (UPS) and UV-Visible spectroscopy. The optical bandgap of CFO reduces from 2.21 eV to 2.07 eV on post N incorporation along with a clear shift in the valence band of CFO indicating the occupation of N 2p levels over O 2p in the valence band. Similar effect is also observed in the bandgap of CFO, which is tailored upto 1.43 eV by N+ ion implantation. The theoretical bandgaps of CFO and CFO-N were also determined by using the Density functional theory (DFT) calculations. The photoactivity of these CFO and CFO-N was explored by organic effluent degradation under sunlight. The feasibility of utilizing CFO and CFO-N samples for energy storage applications were also investigated through specific capacitance measurements. The specific capacitance of CFO is found to increase to 224.67 Fg−1 upon N incorporation. CFO-N is thus found to exhibit superior optical, catalytic as well as supercapacitor properties over CFO expanding the scope of brownmillerites in energy and environmental applications. [ABSTRACT FROM AUTHOR]

Depth profiling type of measurement has been performed on the Co(100 Å)/Cu(50 Å) bilayer thin film. Valence band photoemission spectra were recorded at 50 eV photon energy as a function of sputtering time. The motivation of the present work is to understand the electronic structure of the buried Co/Cu interface and the nature of intermixing in the Co and Cu layers. X-ray reflectivity and transmission electron microscopy corroborate with the photoemission results and shows a very broad intermixed Co-Cu interface. The valence band of intermixed Co/Cu interface shows the Co and Cu 3d states which are considerably shifted towards higher and lower binding energy, respectively, as compared to the bulk elemental Co and Cu 3d states. The experimental observations are explained with the help of calculations based on projected augmented wave pseudopotential method using density functional theory. The origin and the shift of feature in the valence band of the Co-Cu interface are mainly due to the formation of two different Co and Co-Cu mixed nanoclusters. [ABSTRACT FROM AUTHOR]

This communication reports the investigation of the pH effects on the interaction of a well-known lung surfactant, Dipalmitoylphosphatidylcholine (DPPC) with water soluble highly fluorescent dye Rhodamine B (RhB) in complex Langmuir monolayers at the air–water interface. The ionic nature of DPPC changes with the pH of the subphase in the Langmuir trough. At sufficiently low pH it becomes cationic whereas at higher pH it can be presented with a negative net charge and at normal pH it is zwitterionic. Being zwitterionic, RhB molecules can interact with DPPC at normal and higher pH, whereas at lower pH the interaction becomes less probable. This has been investigated in details at the air–water interface in Langmuir trough as well as in Langmuir Blodgett (LB) film by employing surface pressure versus area per molecule (π–A) isotherms, compressibility study, in-situ Fluorescence Imaging Microscopy (FIM), UV-vis absorption spectroscopy and Atomic Force Microscopy (AFM) study. [ABSTRACT FROM PUBLISHER]

Presents a study that investigated whether there is a minimum level of telomerase activity required for tumourigenesis. Use of mutants of human telomerase reverse trancriptase that induce varying levels of telomerase activity; Existence of a threshold of activity required for the processes of immortalization; Effect of the low levels of activity detected in certain somatic cells.