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Examines the formation and high-temperature stability of cobalt silicide films on a silicon dioxide substrate. Details of the experimental procedures; Sheet resistance of the cobalt disilicide film; Effect of the presence of excess silicon in the silicide film.

Presents information on a study which evaluated the feasibility of suppressing silicide formation by incorporating nitrogen into the chemically vapor deposited tungsten film prior to subsequent high-temperature processing. Methodology of the study; Results and discussion; Conclusion.

Deals with the interactions of thin titanium films with substrates under rapid annealing. Information on a proposed self-aligned silicide technology using titanium silicon[sub2] for metal-oxide-semiconductor devices; Details on the standards salicide process; Discussion on the experiment and result of the study.

Presents a study which analyzed the effect of post-silicidation annealing on TiSi[sub2]/p[sup+]-n silicon junctions. Implication of forward-bias current characteristics; Capability of post-silicidation annealing; Situation in which diffusion B from the p-channel source/drain region into TiSi[sub2] occurs.

Presents a study which measured the range of distributions of [sup11]boron[sup+] in polycrystalline cobalt, titanium, CoSi[sub2] and TiSi[sub2] targets by secondary ion mass spectrometry. Method used in forming silicided p[sub+]/n junctions displaying good current-voltage characteristics; Details on preparing targets of cobalt and titanium; Comparison of the depth profiles of [sup11]boron[sup+] implanted into cobalt, silicon, titanium, CoSi[sub2] and TiSi[sub2].

30–90 nm Ti films sputter deposited onto 50 nm Si3N4 have been rapid thermal annealed for 30 s in Ar and N2 ambients, and the phases formed identified using Auger electron spectroscopy, transmission electron microscopy, and electron diffraction. Reaction at 900 °C produces TiN surface and interfacial layers and an intermediate TiSi2 layer. The Ti-Si-N ternary phase diagram is used to explain the reaction sequence. [ABSTRACT FROM AUTHOR]

The selective deposition of tungsten films onto CoSi2 and onto Co by low pressure chemical vapor deposition and their material properties have been investigated with Auger electron spectroscopy, transmission electron microscopy, and Rutherford backscattering. When using WF6 and H2, uniformly thick tungsten films can be deposited onto CoSi2 without substrate alteration. In patterned structures, however, void formation was found at the perimeters of CoSi2 contacts to silicon, indicating encroachment of WF6 down the edge of the silicide-Si interface. In WF6 and Ar, the film thickness was limited to 10 nm and some Si was locally consumed from the upper part of the CoSi2 film. Transmission electron diffraction showed evidence of Co2Si formation in these areas. [ABSTRACT FROM AUTHOR]