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High quality professional development programs and opportunities for teachers are a vital aspect in improving early student achievement. This study adopts a professional development model which tested the difference in early literacy skills and performance of students (n=2028) in Grades 1-3 over a 12-week teacher training program (n=25). The data were analyzed using ANOVA and indicated an overall significant improvement in all tested skills except for phonological awareness, such as rhyming word tasks and reading nonsense words, where there was a significant decrease in performance. The results also indicated a significant difference between gendered scores, where girls outperformed boys in all tested areas except vocabulary knowledge, where there was no statistical difference for Grade 1 and Grade 3 students. Informed by the data, this paper recommends greater teacher preparation in the areas of reading aloud, shared reading, phonics, and basic questioning techniques. [ABSTRACT FROM AUTHOR]

We report on a planar long-wavelength infrared photodetector based on InAs/InAs1-xSbx type-II superlattice with zinc diffusion. The superlattice structures were grown by molecular beam epitaxy, followed by a post-growth Zinc diffusion process in a metal-organic chemical vapor deposition reactor. The planar photodetectors showed a peak responsivity of 2.18 A/W, under an applied bias of −20 mV, with a corresponding quantum efficiency of 44.5%, without any anti-reflection coating, and had a 100% cut-off wavelength of $8.5 \mu \text{m}$ at 77 K temperature. These photodetectors exhibit a specific peak detectivity of $3.0\times 10^{12}$ cm.Hz1/2/W, with a dark current density of $1.5\times 10^{-5}$ A/cm2 and the differential-resistance-area product of $\sim 8.6\times 10^{-1} \Omega $.cm2, under an applied bias of −20 mV at 77 K. A comparative study between the planar and conventional mesa-isolated photodetectors was also carried out. [ABSTRACT FROM AUTHOR]

In this letter, we report a mid-wavelength infrared (MWIR) planar photodetector based on InAs/InAs1−xSbx type-II superlattices (T2SLs) that has a cut-off wavelength of 4.3 μm at 77 K. The superlattice for the device was grown by molecular beam epitaxy while the planar device structure was achieved by Zinc diffusion process in a metal–organic chemical vapor deposition reactor. At 77 K, the peak responsivity and the corresponding quantum efficiency had the value of 1.42 A/W and 48% respectively at 3.7 μm under −20 mV for the MWIR planar photodetector. At 77 K, the MWIR planar photodetector exhibits a dark current density of 2.0 × 10−5 A/cm2 and the R0A value of ~3.0 × 102 Ω∙cm2 under −20 mV, which yielded a specific detectivity of 4.0 × 1011 cm·Hz1/2/W at 3.7 μm. At 150 K, the planar device showed a dark current density of 6.4 × 10−5 A/cm2 and a quantum efficiency of 49% at ~3.7 μm under −20 mV, which yielded a specific detectivity of 2.0 × 1011 cm·Hz1/2/W. [ABSTRACT FROM AUTHOR]

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Magneto-transport measurements have been made on strain-free In0.25Ga0.75Sb/InAs superlattices grown on GaSb substrates. The superior structural quality of these superlattices compared to older materials in the literature resulted in a much higher resolution of the Shubnikov-de Haas oscillations. Three separate conduction channels were observed. Measurements with the magnetic field in the plane of the sample indicated that the channel with the longer period was due to three dimensional-like conduction within the superlattice while the other two channels showed two dimensional behavior most likely associated with conduction at the surface or interfaces between the superlattice and bulk-like layers. Comparison with multi-carrier analysis indicated that the channel with intermediate period was due to hole conduction while the others were due to electron conduction. Oscillations were observed at temperatures up to 20?K. The concentration of the superlattice channel at low temperature was 5.93?×?1015 cm-3 while those of the two dimensional hole and electron channels were 1.64?×?1011 cm-2 and 5.20?×?1011 cm-2. [ABSTRACT FROM AUTHOR]

The electrical properties of In0.25Ga0.75Sb/InAs superlattices designed for use as very long wavelength infrared detectors were studied with magnetic field dependent transport measurements and multicarrier analysis. Two electron channels and one hole channel were identified. The low concentration, high mobility electron channel was identified with conduction within the superlattice. Residual electron concentrations in the superlattice are found to be in the high 1010 cm-2 range with mobilities on the order of 40 000 cm²/V s. The other electron and hole channels have significantly lower mobilities with concentrations in the 1011 cm-2 range and can have a significant impact on the resistivity, carrier concentration, and mobility as measured at a single magnetic field value in conventional transport measurements. [ABSTRACT FROM AUTHOR]

High-quality single-crystalline Bi6FeCoTi3O18 and LaBi5FeCoTi3O18 thin films were prepared by pulsed laser deposition. X-ray diffraction characterizations indicate a more disordered lattice structure of the LaBi5FeCoTi3O18 film. The magnetic measurement results demonstrated significantly enhanced ferromagnetism in the LaBi5FeCoTi3O18 film. The modulation of oxidation and hybridization states caused by substituting Bi with La was studied using the soft X-ray absorption spectroscopy. The spectroscopic results revealed the reduced concentration of oxygen vacancies and the more distorted lattice structure in the LaBi5FeCoTi3O18 film, which explained the enhanced ferromagnetism. [ABSTRACT FROM AUTHOR]

We report the Geiger mode operation of back-illuminated AlGaN avalanche photodiodes. The devices were fabricated on transparent AlN templates specifically for back-illumination to leverage hole-initiated multiplication. The spectral response was analyzed with a peak detection wavelength of 255 nm with an external quantum efficiency of ~14% at zero bias. Low-photon detection capabilities were demonstrated in devices with areas 25 μm × 25 μm. Single photon detection efficiencies of ~5% were achieved. [ABSTRACT FROM AUTHOR]

In this work, a mid-wavelength infrared separate absorption and multiplication avalanche photodiode (SAM-APD) with 100% cut-off wavelength of ~ 5.0 µm at 200 K grown by molecular beam epitaxy was demonstrated. The InAsSb-based SAM-APD device was designed to have electron dominated avalanche mechanism via the band structure engineered multi-quantum well structure based on AlAsSb/GaSb H-structure superlattice and InAsSb material in the multiplication region. The device exhibits a maximum multiplication gain of 29 at 200 K under -14.7 bias voltage. The maximum multiplication gain value for the MWIR SAM-APD increases from 29 at 200 K to 121 at 150 K. The electron and hole impact ionization coefficients were derived and the large difference between their value was observed. The carrier ionization ratio for the MWIR SAM-APD device was calculated to be ~ 0.097 at 200 K. [ABSTRACT FROM AUTHOR]

A great challenge in power/RF electronics has been achieving integrated magnetic inductors with high quality factor ($Q$ -factor) and high inductance density at gigahertz frequencies. In this article, integrated solenoid magnetoelectric inductors based on FeGaB/Al2O3 multilayer as the magnetic core are designed to operate at high gigahertz frequencies, high $Q$ -factor, and inductance tunability. A high self-resonant frequency of >3 GHz with a flat inductance of 1.4 nH and a peak $Q$ -factor of ~32.7 has been achieved within a wide operating frequency ranging from 0.3 to 3 GHz with magnetic annealing treatment to enhance the inductance density and $Q$ -factor. Two different inductance-tuning methods are tested. For magnetic field tuning, an external magnetic field from 0 to 500 Oe is applied to achieve an inductance tunability $\Delta {\mathbf {L}/\mathbf {L}} _{\mathbf {min}}$ of ~69.2%. Voltage tuning is also tested based on the magnetoelectric coupling between FeGaB/Al2O3 multilayer and ferroelectric slab achieving a maximum tunability of 191% with a flat inductance within the operating frequency. Such a high $Q$ -factor and high inductance density together with giant electrical tunability will greatly improve the integration level and performance of tunable radio frequency integrated circuits while reducing their power consumption and cost. [ABSTRACT FROM AUTHOR]

We report results of a systematic study of the structural and photoresponse properties of GaAs/{InAs quantum dot (QD)/InGaAs quantum well/GaAs} ×m multiple quantum dot (MQD) structures with m from 1 to 20 placed in n-GaAs/i(MQD)/n-GaAs configuration to act as quantum dot infrared photodetectors (QDIPs). Extremely low dislocation densities inferred from cross-sectional and plan-view transmission electron microscopy and the observed linear increase in photoluminescence intensity with MQD thickness reveal the high quality of these QDIP structures. Temperature and bias dependent dark and photocurrent measurements reveal dark current activation energies (Ea) increasing with the number of QD layers in a manner that indicates that Ea represents the built-in potential in the MQD region. These studies indicate the need for more quantitative modeling to guide optimal doping strategies and profiles to realize high photocurrents while maintaining acceptable dark current. [ABSTRACT FROM AUTHOR]

Molecular beam epitaxy grown InAs/GaSb superlattices, containing InSb-like interfacial layers, were analyzed by a combination of x-ray diffraction (XRD) and structural refinement. The superlattice refinement from x rays (SUPREX) method determines with high accuracy the average thicknesses and d spacings of the individual InAs and GaSb layers in addition to standard structural parameters usually obtained by XRD, such as the modulation length (periodicity), average out-of-plane interplanar spacings, and total thickness. The combined SUPREX/XRD experiments show that the absence of certain odd order satellite features in the x-ray data is due to asymmetric and inhomogeneous lattice strain. [ABSTRACT FROM AUTHOR]

Würtzite semiconductors exhibit strong carrier-phonon coupling as well as strong Restrahlen-related absorption of radiation due to the interaction with optical phonons. For the GaN and AlN würtzites studied here, the optical phonon frequencies fall in the infrared region. With the transverse-optical phonon frequency ωt, and longitudinal-optical phonon frequency ωl, when light with frequencies ωt<ω<ωl is incident on a GaN or AlN film, the resonance with optical phonons will lead to strong absorption. In this paper, these effects are modeled and studied experimentally. Our studies show that the absorption is so strong that it is still significant even when the sample thickness is reduced to the submicron level. It is also found experimentally and theoretically that, not only the first harmonic, but also the second harmonic of the phonon frequency leads to strong absorption. Theoretical comparisons with experimental data and predicted transmission versus the energy of the incident light for different film thicknesses are presented. [ABSTRACT FROM AUTHOR]

Layered magnetic/piezoelectric heterostructures have drawn a great amount of interest for their potential use in ultra-sensitive magnetoelectric (ME) sensors, ME antennas, voltage tunable inductors, magnetic tunable resonators, etc. It is critically important to characterize the saturation magnetostriction, piezomagnetic coefficient, ΔE effect, and magnetomechanical coupling factor of magnetic thin films, which determine the performance of these ME devices. In this work, a sensitive system has been developed to measure these magnetomechanical properties, on which several different magnetostrictive thin films on the silicon substrate cantilever were characterized. A 0.015 ppm limit of detection of the magnetostriction tester and a frequency resolution of 0.01 Hz of the ΔE tester have been achieved. After magnetic anneal treatment, a record high piezomagnetic coefficient of 12 ppm/Oe, a giant magnetic field induced Young's modulus change of 153 GPa, and a high effective magnetomechanical coupling factor of 0.84 have been measured in FeGaB thin films. [ABSTRACT FROM AUTHOR]

We investigate the role of annealing Co40Fe40B20 at different temperatures and how it affects the crystallinity and the ferromagnetic resonance (FMR) behavior. The onset of crystallization was shown to occur after annealing in nitrogen at 370 °C for 1 h. The crystallization peak of the post-annealed Co40Fe40B20 was matched to the analysis of (110) Co7Fe3, due to secondary phase segregation. Magnetic force microscopy images show a pattern of magnetization ripples in the magnetic phase images for samples upto 250 °C. The grain size of the Co7Fe3 (110) was shown to increase from 20 to 56 nm when annealed above 370 °C to 600 °C. The segregated Co7Fe3 causes scattering of the FMR linewidth, which shifts the resonance peak location, broadens peak-to-peak linewidth, and causes an additional resonance peak to appear close to the uniform resonance of the amorphous phase. Annealing above 500 °C leads to a complete phase change to Co7Fe3, which changes the FMR spectra back to a single resonance peak, shifted to lower fields with broader peak-to-peak linewidth of ~71.2 (kA/m). [ABSTRACT FROM AUTHOR]

Deep levels between 0.1 and 1.0 eV in semi-insulating and high resistivity undoped horizontal Bridgman GaAs have been studied by temperature-dependent Hall effect (TDH) and Fourier transform photoconductivity (FTPC) . Activation energies at 0.77, 0.426, and 0.15 eV have been observed by TDH. Photoionization thresholds at 1.0, 0.8, 0.56, 0.44, and 0.25 are reported. The photoconductivity thresholds at 0.56 and 0.25 eV are reported for the first time. New features in the 0.44 eV threshold suggest that the defect responsible for this level has a small lattice relaxation and Frank-Condon shift. Possible associations of the FTPC and TDH energies with the deep-level transient spectroscopy levels EL2, EL3, and EL6 are presented. [ABSTRACT FROM AUTHOR]

Presents a study on the dominant double acceptor found in p-type undoped gallium arsenide grown by the liquid-encapsulated Czochralski technique using temperature-dependent Hall effect, infrared absorption, spectral photoconductivity and photoluminescence. Fitting techniques for analyzing the temperature-dependent Hall-effect data; Dependence of the activation energy of the neutral state of the double acceptor; Details on the aluminum and indium alloyed samples.

We experimentally investigate spin-orbit torque and spin pumping in Y3Fe5O12 (YIG)/Pt bilayers with ultrathin insertion layers at the interface. An insertion layer of Cu suppresses both spin-orbit torque and spin pumping, whereas an insertion layer of Ni80Fe20 (permalloy, Py) enhances them in a quantitatively consistent manner with the reciprocity of the two spin transmission processes. However, we observe a large enhancement of Gilbert damping with the insertion of Py that cannot be accounted for solely by spin pumping, suggesting significant spin-memory loss due to the interfacial magnetic layer. Our findings indicate that the magnetization at the YIG-metal interface strongly influences the transmission and depolarization of pure spin current. [ABSTRACT FROM AUTHOR]

Ferromagnetic insulators are required for many new magnetic devices, such as dissipationless quantum-spintronic devices, magnetic tunneling junctions, etc. Ferromagnetic insulators with a high Curie temperature and a high-symmetry structure are critical integration with common single-crystalline oxide films or substrates. So far, the commonly used ferromagnetic insulators mostly possess low-symmetry structures associated with a poor growth quality and widespread properties. The few known high-symmetry materials either have extremely low Curie temperatures (≤16 K), or require chemical doping of an otherwise antiferromagnetic matrix. Here we present compelling evidence that the LaCoO3 single-crystalline thin film under tensile strain is a rare undoped perovskite ferromagnetic insulator with a remarkably high TC of up to 90 K. Both experiments and first-principles calculations demonstrate tensile-strain-induced ferromagnetism which does not exist in bulk LaCoO3. The ferromagnetism is strongest within a nearly stoichiometric structure, disappearing when the Co2+ defect concentration reaches about 10%. Significant impact of the research includes demonstration of a strain-induced high-temperature ferromagnetic insulator, successful elevation of the transition over the liquid-nitrogen temperature, and high potential for integration into large-area device fabrication processes. [ABSTRACT FROM AUTHOR]

We report the most recent advance in the area of type II InAs/GaSb superlattices that have cutoff wavelength of ∼3.7 μm. With Ga[sub x]In[sub 1-x] type interface engineering techniques, the mismatch between the superlattices and the GaSb (001) substrate has been reduced to <0.1%. There is no evidence of dislocations using the best examination tools of x-ray, atomic force microscopy, and transmission electron microscopy. The full width half maximum of the photoluminescence peak at 11 K was ∼4.5 meV using an Ar[sup +] ion laser (514 nm) at fluent power of 140 mW. The integrated photoluminescence intensity was linearly dependent on the fluent laser power from 2.2 to 140 mW at 11 K. The temperature-dependent photoluminescence measurement revealed a characteristic temperature of one T[sub 1]=245 K at sample temperatures below 160 K with fluent power of 70 mW, and T[sub 1]=203 K for sample temperatures above 180 K with fluent power of 70 and 420 mW. © 2003 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Significantly improved carrier lifetimes in very long-wave infrared (VLWIR) InAs/GaInSb superlattice (SL) absorbers are demonstrated using time-resolved microwave reflectance (TMR) measurements. A nominal 47.0 Å InAs/21.5 Å Ga0.75In0.25Sb SL structure that produces an ∼25 μm response at 10 K has a minority carrier lifetime of 140 ± 20 ns at 18 K, which is an order-of-magnitude improvement compared with previously reported lifetime values for other VLWIR detector absorbers. This improvement is attributed to the strain-engineered ternary SL design, which offers a variety of epitaxial advantages and ultimately leads to the improvements in the minority carrier lifetime by mitigating defect-mediated Shockley–Read–Hall (SRH) recombination centers. By analyzing the temperature dependence of TMR decay data, the recombination mechanisms and trap states that currently limit the performance of this SL absorber were identified. The results show a general decrease in the long-decay lifetime component, which is dominated by SRH recombination at temperatures below ∼30 K and by Auger recombination at temperatures above ∼45 K . Since the strain-balanced ternary SL design offers a reasonably good absorption coefficient and many epitaxial advantages during growth, this VLWIR SL material system should be considered as a competitive candidate for VLWIR photodetector technology. [ABSTRACT FROM AUTHOR]

Integrated inductor is one of the fundamental components and has been widely used in radio frequency integrated circuits (RFICs). It has been challenging to achieve simultaneously high inductance and quality factor, particularly at GHz frequencies. In this work, we reported a novel integrated solenoid inductor with a magnetic NiZn ferrite as the core material, which was deposited by a low-cost spin spray technique. These integrated inductors showed a significant improvement in both inductance and quality factor at GHz frequencies over their air core counterparts. A stable inductance was observed within a wide frequency ranged from 700 MHz to 6 GHz. The peak value of quality factor reached 23, a relatively higher value not reported for solenoid inductors up to date. Our results indicate that the integrated inductor are promising for applications in RFICs. [ABSTRACT FROM AUTHOR]

Advanced infrared detector materials utilizing InAs/InAsSb superlattices (SLs) are emerging due to the long minority carrier lifetimes observed in this material system. However, compositional and dimensional changes through Sb segregation alter the detector properties from the original design, and precise compositional control of the Sb in the SL is crucial to advance the state-of-the-art of this novel material system. In this study, epitaxial conditions that can mitigate Sb segregation during growth are explored in order to achieve high-quality SL materials. A nominal SL structure of 77 Å InAs/35 Å InAs0.7Sb0.3 tailored for a midinfrared gap was used to optimize our epitaxial parameters. Since the growth of mixed anion alloys is complicated by the potential reaction of Asx with Sb surfaces, the substrate temperature (Ts), and arsenic cracker temperature (TAs) was varied in order to control the Asx surface kinetics on a Sb surface. Experimental results indicate that the SL sample grown at the lowest investigated Ts of 400 °C produces the highest Sb mole fraction x of ∼0.3 in InAs1-xSbx layers, which is then decreased by 14% as the Ts increases from 400 to 440 °C. This reduction originates from Sb surface segregation during InAsSb growth through the As-Sb exchange process. Although this incorporation was increased with a lower TAs, the crystalline quality of SL layers quickly degraded with the TAs below 850 °C due to the poor adsorption coefficient of As4 at the growth front. Since a change in the designed compositions and effective layer widths related to Sb segregation disrupts strain balance and also significantly impacts the detector performance, further studies to prevent Sb segregation are needed. [ABSTRACT FROM AUTHOR]

Writing SMART Goals has recently become an integral part of the landscape of teacher professional learning in Australian schools, including both teacher professional development and performance management in classroom practices. This paper discusses the origins of SMART Goals and the diverse terms and definitions associated with such goal setting. Anecdotal evidence suggests that for some teachers, writing personal, professional or teaching and learning goals may be a daunting task. For school leadership teams, these goals often are the basis for operationalising school improvement over time. We make a case for clarity with SMART Goals within the context of each school, as interpreted and supported by school principals and leadership teams working with their staff. This paper concludes with some tentative suggestions for school leaders intended to improve SMART Goals, and teacher professional learning, over time. We hope this clarification and our suggestions support writing more effective learning goals for both teachers and students over time. [ABSTRACT FROM PUBLISHER]

We investigate the minority carrier lifetime of Be-doped InAs/InAsSb type-II superlattices as a function of doping density and temperature using time-resolved photoluminescence (TRPL) to determine if switching the superlattice type from the typical n-type residual carrier concentration to p-type may improve device performance by improving the lifetime-mobility product. The introduction of the Be dopant to the superlattice reduces the carrier lifetime, first by a factor of ∼3 for doping densities near or below the n-type residual carrier concentration, then by an order of magnitude for samples doped well above the residual carrier concentration. Further, the higher-doped p-type samples demonstrate two distinct TRPL decay regimes and two peaks in the PL spectra, suggesting the formation of an additional acceptor-related recombination pathway leading to the observed shorter carrier lifetime. [ABSTRACT FROM AUTHOR]

Significantly improved carrier lifetimes in very-long wave infrared InAs/GaInSb superlattice(SL) absorbers are demonstrated by using time-resolved microwave reflectance (TMR) measurements. A nominal 47.0Å InAs/21.5Å Ga0.75In0.25Sb SLstructure that produces an approximately 25µm response at 10K has a minority carrier lifetime of 140±20ns at 18K, which is markedly long for SL absorber with such a narrow bandgap. This improvement is attributed to the strain-engineered ternary design. Such SL employs a shorter period with reduced gallium in order to achieve good optical absorption and epitaxial advantages, which ultimately leads to the improvements in the minority carrier lifetime by reducing Shockley-Read-Hall (SRH) defects. By analyzing the temperature-dependence of TMR decay data, the recombination mechanisms and trap states that currently limit the performance of this SL absorber have been identified. The results show a general decrease in the long-decay lifetime component, which is dominated by the SRH recombination at temperature below ~30K, and by Auger recombination at temperatures above ~45 K. [ABSTRACT FROM AUTHOR]

Electric-field modulation of magnetism in strain-mediated multiferroicheterostructures is considered a promising scheme for enabling memory and magnetic microwave devices with ultralow power consumption. However, it is not well understood how electric-field-induced strain influences magnetic relaxation, an important physical process for device applications. Here, we investigate resonant magnetization dynamics in ferromagnet/ferroelectric multiferroicheterostructures, FeGaB/PMN-PT and NiFe/PMN-PT, in two distinct strain states provided by electric-field-induced ferroelectric phase transition. The strain not only modifies magnetic anisotropy but also magnetic relaxation. In FeGaB/PMN-PT, we observe a nearly two-fold change in intrinsic Gilbert damping by electric field, which is attributed to strain-induced tuning of spin-orbit coupling. By contrast, a small but measurable change in extrinsic linewidth broadening is attributed to inhomogeneous ferroelastic domain switching during the phase transition of the PMN-PT substrate. [ABSTRACT FROM AUTHOR]

There is a long-standing challenge in the fabrication of layered oxide epitaxial films due to their thermodynamic phase-instability and the large stacking layer number. Recently, the demand for high-quality thin films is strongly pushed by their promising room-temperature multiferroic properties. Here, we find that by inserting a conducting and lattice matched LaNiO3 buffer layer, high quality m=5 Bi6FeCoTi3O18 epitaxial films can be fabricated using the laser molecular beam epitaxy, in which the atomic-scale sharp interface between the film and the metallic buffer layer explains the enhanced quality. The magnetic and ferroelectric properties of the high quality Bi6FeCoTi3O18 films are studied. This study demonstrates that insertion of the conducting layer is a powerful method in achieving high quality layered oxide thin films, which opens the door to further understand the underline physics and to develop new devices. [ABSTRACT FROM AUTHOR]

Super-large-period Aurivillius thin films with a pseudo-period of ten were grown on (0 0 1) SrTiO3 substrates using the pulsed laser deposition method. The as-grown films are found to be coherently strained to the substrate and atomically smooth. X-ray diffraction indicates an average periodicity of ten, while analysis with the high resolution scanning transmission electron microscopy reveals a self-modulated nanostructure in which the periodicity changes as the film thickness increases. Finally, we discuss the magnetic and possible ferroelectric properties of the self-modulated large period Aurivillius films at the room temperature. [ABSTRACT FROM AUTHOR]

Inductors find widespread use in various applications. Inductors with a large tunability of inductance and quality factor would lead to new paradigm on circuit designs. In this paper, we investigated the effect of ferromagnetic layer thickness on the performance of a magnetoelectric tunable inductor. Using chemical etching, the thickness of Metglas ribbons (2605SA1) can be reduced from 24 to about 8 \mu m, which dramatically reduces the eddy-current loss at higher frequencies. With the same total thickness, compared with inductor constructed with unthinned Metglas layers (2605CO), the maximum quality factor can be increased for 80%, and the operational frequency range can be extended for 10\times to the >10 MHz range. An inductance tunable range of L \mathrm {max} / L\mathrm {min}= 370{\%} was also achieved together with a significantly enhanced quality factor by $\sim 3.$ Furthermore, with an inductor constructed with single thin Metglas (2605HB1M) layer, the maximum quality factor can be increased by 150% with single PZT slab and by 235% with double PZT slabs, and the operational frequency range can be extended by $100\times $ with single slab and by $200\times $ with double slabs, which makes these metallic magnetic ribbons tunable inductors competitive with ferrite materials in adaptive inductive power supply systems. [ABSTRACT FROM AUTHOR]

We present a simple technique using a cavity-based resonance spectrometer to quantify the anti-damping torque due to the spin Hall effect. Modification of ferromagnetic resonance is observed as a function of small DC current in sub-mm-wide strips of bilayers, consisting of magnetically soft FeGaB and strong spin-Hall metal Ta. From the detected current-induced linewidth change, we obtain an effective spin Hall angle of 0.08-0.09 independent of the magnetic layer thickness. Our results demonstrate that a sensitive resonance spectrometer can be a general tool to investigate spin Hall effects in various material systems, even those with vanishingly low conductivity and magnetoresistance. [ABSTRACT FROM AUTHOR]