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Agastache rugosa (Fisch. et Mey.) O. Ktze, also known as "Suhuoxiang" (SHX), has been cultivated for more than three hundred years as a valuable aromatic edible and medicinal plant in Jiangsu Province, China. The volatile compounds of SHX from various habitats were investigated by HS-SPME-GC-MS, detecting sixty-five chemical constituents with menthone, pulegone, and estragole being the major volatile compounds. Their relative contents showed various accumulation tendencies in different growth months by GC-MS, with the relative content of menthone gradually increasing, pulegone content decreasing, as well as estragole content climbing initially before declining. This tendency was supported by quantitative experiments using samples from various habitats, which also revealed that the full-bloom stages exhibited the highest total concentrations of menthone and pulegone. The volatile composition of SHX in various plant organs differed, with palmitic acid being the main volatile component of stems, while menthone and pulegone being the core volatile components of leaves and spikes, implying that leaves and spikes should be separated from the stem to obtain higher drug contents. The current findings provide new information for SHX cultivation and applications. [ABSTRACT FROM AUTHOR]

Near-normal incidence infrared reflectivity spectra of (001) strontium lanthanum aluminate (SrLaAlO[sub 4]) single crystal have been measured under different temperatures in the frequency region between 100 and 6500 cm-1. Five phonon modes are distinguished at low frequency while no spectral features were observed above 1000 cm-1. All the reflectivity spectra are fitted with the factorized form of the dielectric function. The dielectric properties of the SrLaAlO[sub 4] crystal in far-infrared region are presented and analyzed. © 2004 American Institute of Physics. [ABSTRACT FROM AUTHOR]

We report the design, fabrication, and characterization of room-temperature Si single-electron memories using nanoimprint lithography (NIL). The devices consist of a narrow channel metal–oxide–semiconductor field-effect transistor and a sub-10-nm storage dot, which is located between the channel and the gate. The memories operate at room temperature by charging and discharging one electron in or out of the dot. The charge retention time is up to two days. NIL is shown to be tailored for nanodevice fabrication. By using NIL as a nanolithography tool, the single-electron memory is more feasible for mass production. © 2003 American Institute of Physics. [ABSTRACT FROM AUTHOR]