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Organosilicate glass (OSG) films are a critical component in modern electronic devices, with their electrical properties playing a crucial role in device performance. This comprehensive review systematically examines the influence of chemical composition, vacuum ultraviolet (VUV) irradiation, and plasma treatment on the electrical properties of these films. Through an extensive survey of literature and experimental findings, we elucidate the intricate interplay between these factors and the resulting alterations in electrical conductivity, dielectric constant, and breakdown strength of OSG films. Key focus areas include the impact of diverse organic moieties incorporated into the silica matrix, the effects of VUV irradiation on film properties, and the modifications induced by various plasma treatment techniques. Furthermore, the underlying mechanisms governing these phenomena are discussed, shedding light on the complex molecular interactions and structural rearrangements occurring within OSG films under different environmental conditions. It is shown that phonon-assisted electron tunneling between adjacent neutral traps provides a more accurate description of charge transport in OSG low-k materials compared to the previously reported Fowler–Nordheim mechanism. Additionally, the quality of low-k materials significantly influences the behavior of leakage currents. Materials retaining residual porogens or adsorbed water on pore walls show electrical conductivity directly correlated with pore surface area and porosity. Conversely, porogen-free materials, developed by Urbanowicz, exhibit leakage currents that are independent of porosity. This underscores the critical importance of considering internal defects such as oxygen-deficient centers (ODC) or similar entities in understanding the electrical properties of these materials. [ABSTRACT FROM AUTHOR]

It is assumed that the reliability and functionality of nonvolatile memory elements based on MgO are determined by the charge transport in MgO. In the present study, the type of MgO conductivity is established using experiments on the injection of minority charge-carriers in the n(p)-Si/MgO/Mg structures. It is shown that electrons and holes contribute to the MgO conductivity, causing bipolar charge transport. Using ab initio simulations, it was found that native point defects in MgO can provide both electron and hole conductivity. [ABSTRACT FROM AUTHOR]

Organosilicate-glass-based low-κ films containing both terminal methyl groups and an ethylene bridge between the silicon atoms are spin-on deposited by using 1,2-bis(trimethoxysilyl)ethane and methyltrimethoxysilane, Brij30 template, and thermal curing. The chemical composition, porosity, and internal defects are studied using Fourier-transform infrared spectroscopy, x-ray photoelectron spectroscopy, electron energy loss spectroscopy, UV induced luminescence, and ellipsometric porosimetry. It was found that the studied films contain oxygen-deficient centers (Si—Si bonds). The high defect density of the states near the valence-band edge of the studied low-κ films leads to a relatively small bandgap value of about 6.3 eV. The current–voltage characteristics at different temperatures were analyzed using six theoretical charge transport models where the transport is limited by the traps ionization. It was found that the best qualitative and quantitative agreement between the calculations and experimental data is achieved by using the model of phonon-assisted electron tunneling between the neutral traps and is supplemented by considering the space charge and charge carrier kinetics. Since the thermal and optical energies of the traps in the studied films are 1.6 eV and 3.2 eV, respectively, it is concluded that the traps are responsible for the charge transport in the Si—Si bonds. [ABSTRACT FROM AUTHOR]

A memristor is a new generation memory that merges dynamic random access memory and flash properties. In addition, it can be used in neuromorphic electronics. The advantage of silicon oxynitride, as an active memristor layer, over other dielectrics it is compatibility with silicon technology. It is expected that SiNxOy-based memristors will combine the advantages of memristors based on nonstoichiometric silicon oxides and silicon nitrides. In the present work, the plasma-enhanced chemical vapor deposition (PECVD) method was used to fabricate a silicon oxynitride-based memristor. The memristor leakage currents determine its power consumption. To minimize the power consumption, it is required to study the charge transport mechanism in the memristor in the high-resistance state and low-resistance state. The charge transport mechanism in the PECVD silicon oxynitride-based memristor in high and low resistance states cannot be described by the Schottky effect, thermally assisted tunneling model, Frenkel effect model of Coulomb isolated trap ionization, Hill–Adachi model of overlapping Coulomb potentials, Makram–Ebeid and Lannoo model of multiphonon isolated trap ionization, Nasyrov–Gritsenko model of phonon-assisted tunneling between traps, or the Shklovskii–Efros percolation model. The charge transport in the forming-free PECVD SiO0.9N0.6-based memristor in high and low resistance states is described by the space charge limited current model. The trap parameters responsible for the charge transport in various memristor states are determined. For the high-resistance state, the trap ionization energy W is 0.35 eV, and the trap concentration Nd is 1.7 × 1019 cm−3; for the low-resistance state, the trap ionization energy W is 0.01 eV, and the trap concentration Nt is 4.6 × 1017 cm−3. [ABSTRACT FROM AUTHOR]

Exxon Neftegas Ltd. (ENL) carried out three 4D seismic surveys during the summer of 2015. Seismic operations in two of these fields (Odoptu and Chayvo) ensonified the nearshore feeding area of Korean-Okhotsk (western) gray whales (Eschrichtius robustus), potentially disturbing feeding activities. Following model-based optimization of the source design to minimize its lateral acoustic footprint, pre-season modeling was used to compute the acoustic exposure along each survey line. Real-time acoustic data facilitated implementation of mitigation measures aimed to minimize disturbance of whales. Acoustic data originated from underwater recorders deployed on the seafloor. Two complementary approaches were used to transmit recorded sound data to a computer housed at the Central Post (CP), where decisions regarding mitigation shut downs were made. In the first approach, a limited bandwidth (2–2000 Hz) sampling of the data was transmitted via cable to a surface buoy, which relayed these data to a shore station up to 15 km away via digital VHF telemetry. At the shore station, acoustic impulses from the seismic surveys were processed to compute impulse characteristics in the form of estimates of sound exposure level and peak sound pressure level, as well as one-minute-average 1/3-octave power spectral density coefficients, which were then transmitted to the CP via the internet. In the second, the pulse characteristics were computed through algorithms running on an onboard processor in each recorder's surface buoy and sent directly to the CP computer via an Iridium satellite uplink. Both methods of data transfer proved viable, but Iridium transmission achieved the goal without the need for any shore based relay stations and is therefore more operationally efficient than VHF transmission. At the CP, analysts used the real-time acoustic data to calibrate and adjust the output of pre-season acoustical model runs. The acoustic footprint for the active seismic source, advancing synchronously with the motion of the seismic vessel and changing as the sound propagation environment changed, was computed from the calibrated and adjusted model output and integrated through the software Pythagoras with locations of gray whales provided by shore-based observers. This enabled analysts to require air gun array shutdowns before whales were exposed to mean square sound pressure levels greater than the behavioral response threshold of 163 dB re 1 μPa2. The method described here provides a realistic means of mitigating the possible effects of air guns at a behavioral response level, whereas most seismic surveys rely on pre-established mitigation radii to manage the risk of injury to a whale. [ABSTRACT FROM AUTHOR]

During the summer of 2015, four 4D seismic surveys were conducted on the northeastern Sakhalin shelf near the feeding grounds of the Korean-Okhotsk (western) gray whale (Eschrichtius robustus) population. In addition to the seismic surveys, onshore pile driving activities and vessel operations occurred. Forty autonomous underwater acoustic recorders provided data in the 2 Hz to15 kHz frequency band. Recordings were analyzed to evaluate the characteristics of impulses propagating from the seismic sources. Acoustic metrics analyzed comprised peak sound pressure level (PK), mean square sound pressure level (SPL), sound exposure level (SEL), T100%, T90% (the time intervals that contain the full and 90% of the energy of the impulse), and kurtosis. The impulses analyzed differed significantly due to the variability and complexity of propagation in the shallow water of the northeast Sakhalin shelf. At larger ranges, a seismic precursor propagated in the seabed ahead of the acoustic impulse, and the impulses often interfered with each other, complicating analyses. Additional processing of recordings allowed evaluation and documentation of relevant metrics for pile driving, vessel sounds, and ambient background levels. The computed metrics were used to calibrate acoustic models, generating time resolved estimates of the acoustic levels from seismic surveys, pile driving, and vessel operations on a gray whale distribution grid and along observed gray whale tracks. This paper describes the development of the metrics and the calibrated acoustic models, both of which will be used in work quantifying gray whale behavioral and distribution responses to underwater sounds and to determine whether these observed responses have the potential to impact important parameters at the population level (e.g., reproductive success). [ABSTRACT FROM AUTHOR]

The top‐gate 4.5‐nm‐thick SnO2 nanosheet nTFT has the high 136 cm2/Vs field‐effect mobility (μFE), sharp 1.5×108 on‐current/off‐current (ION/IOFF), and fast turn‐on subthreshold slope (SS) of 108 mV/decade. The top‐gate 7‐nm‐thick nanosheet SnO pTFT has a high μFE of 4.4 cm2/Vs, large ION/IOFF of 1.2×105, and SS of 526 mV/decade. These CTFTs will enable the system‐on‐panel (SoP) and Monolithic Three‐Dimensional (3D) Integrated Circuit (IC). [ABSTRACT FROM AUTHOR]

Lanthanum-doped HfZrO is considered as the ferroelectric material for capacitor structures used in one-transistor-one capacitor nonvolatile memory cells for the development of new generation nonvolatile random-access memory. Here, different capacitor structures are characterized by x-ray photoelectron spectroscopy electrically to determine the electron and hole contribution to the conductivity in these capacitor structures. Experiments related to the minority carrier's injection and charge transport from an n-Si and a p-Si substrate into a lanthanum-doped HfZrO layer show that the conductivity is bipolar. Electrons are injected into La:HfZrO from a negatively biased contact, and accordingly, holes are injected from a positive voltage biased electrode. [ABSTRACT FROM AUTHOR]

TaOx is a promising candidate for random access memory formation. To provide the possibility of 3D integration, it is grown by the atomic layer deposition (ALD). Herein, such properties of the pristine TaOx grown by radical‐enhanced ALD (REALD) as oxygen vacancies concentration and the trap energy are evaluated to reveal whether it can replace more common ion‐sputtered TaOx both in filamentary and nonfilamentary resistive random access memory (ReRAM) stacks. For this purpose, charge transport mechanism in the TiN/TaOx/Pt stacks is analyzed. It is found that charge transport through TaOx is described by the phonon‐assisted tunneling between traps model. The thermal Wt = 0.85 eV and optical Wopt = 1.7 eV trap energies are determined. The trap concentration N = 1 × 1021 cm−3 found from transport corresponds well with the oxygen vacancy concentration, obtained by ab initio simulation of valence band X‐ray photoelectron spectrum. Derived parameters are typical for the ion‐sputtered TaOx. As a result, it can be considered to replace ion‐sputtered TaOx in the nonfilamentary bilayer stacks. Moreover, the observed properties explain the possibility to achieve electroforming‐free resistive switching in a single layer REALD grown TaOx‐based stack in combination with extracting Ta electrode. [ABSTRACT FROM AUTHOR]

The charge transport and trap nature responsible for the leakage current through thermally cured methyl‐terminated organosilicate low‐κ dielectric films are studied. It is found that the Frenkel emission does not describe correctly the charge transport in the studied films. The charge transport occurs via the phonon‐assisted electron tunneling between neutral traps as described in the Nasyrov–Gritsenko model. The obtained thermal trap energy value 1.2 eV is close to that for the oxygen divacancy (SiSiSi cluster) in SiO2. The electron energy loss spectra, photoluminescence excitation of 2.7 eV blue band spectra, and data from the simulation within the density functional theory for the model SiCOH low‐κ structure confirm the presence of oxygen vacancy and divacancy in the studied films. The thermal trap energy value estimated as half the Stokes shift of the blue luminescence also gives a value close to 1.2 eV. It proves the correctness of the Nasyrov–Gritsenko model for describing the charge transport mechanism and the conclusion that oxygen divacancies are traps responsible for the leakage current in the studied low‐κ films. [ABSTRACT FROM AUTHOR]

Nonstoichiometric silicon nitride SiNx is a promising material for developing a new generation of high-speed, reliable flash memory device based on the resistive effect. The advantage of silicon nitride over other dielectrics is its compatibility with the silicon technology. In the present work, a silicon nitride-based memristor deposited by the plasma-enhanced chemical vapor deposition method was studied. To develop a memristor based on silicon nitride, it is necessary to understand the charge transport mechanisms in all states. In the present work, it was established that the charge transport in high-resistance states is not described by the Frenkel effect model of Coulomb isolated trap ionization, Hill–Adachi model of overlapping Coulomb potentials, Makram–Ebeid and Lannoo model of multiphonon isolated trap ionization, Nasyrov–Gritsenko model of phonon-assisted tunneling between traps, Shklovskii–Efros percolation model, Schottky model and the thermally assisted tunneling mechanisms. It is established that, in the initial state, low-resistance state, intermediate-resistance state and high-resistance state, the charge transport in the forming-free SiNx-based memristor is described by the space charge limited current model. The trap parameters responsible for the charge transport in various memristor states are determined. [ABSTRACT FROM AUTHOR]

THe memristor is a key memory element for neuromorphic electronics and new generation flash memories. One of the most promising materials for memristor technology is silicon oxide SiOx, which is compatible with silicon-based technology. In this paper, the electronic structure and charge transport mechanism in a forming-free SiOx-based memristor fabricated with the plasma enhanced chemical vapor deposition method is investigated. The experimental current-voltage characteristics measured at different temperatures in high-resistance, low-resistance and intermediate states are compared with various charge transport theories. The charge transport in all states is limited by the space charge-limited current model. The trap parameters, responsible for the charge transport in a SiOx-based memristor in different states, are determined. [ABSTRACT FROM AUTHOR]

The discovery of ferroelectric properties in hafnium oxide has brought back the interest in the ferroelectric non-volatile memory as a possible alternative for low power consumption electronic memories. As far as real hafnium oxide-based materials have defects like oxygen vacancies, their presence might affect the ferroelectric properties due to oxygen atom movements during repolarization processes. In this work, the transport experiments are combined with the modeling to study evolution of the oxygen vacancy concentration during the endurance and to determine the optimal defect density for a higher residual polarization in lanthanum-doped hafnium oxide. [ABSTRACT FROM AUTHOR]

Electronic structure of oxygen vacancies in Ta2O5 have been studied theoretically by first-principles calculations and experimentally by x-ray photoelectron spectroscopy. Calculations of δ-Ta2O5 were performed using density functional theory within gradient-corrected approximation with the +U approach. Results indicate that the oxygen vacancy causes a defect level in the energy gap at 1.2 eV above the top of the valence band. To produce oxygen vacancies, amorphous films of Ta2O5 were bombarded with Ar+ ions. XPS results indicate that the Ar-ion bombardment leads to the generation of the oxygen vacancies in Ta2O5 that characterize the peak at 2 eV above the valence band. The calculated spectrum of crystalline δ-Ta2O5 demonstrates qualitative correspondence with the XPS spectrum of the amorphous Ta2O5 film after Ar-ion bombardment. [ABSTRACT FROM AUTHOR]

One technology bottleneck for system‐on‐panel (SoP) is the lacking of high‐performance p‐type thin‐film transistor (pTFT). Using high dielectric‐constant (high‐κ) gate materials with optimized processes, high hole and electron field‐effect mobility of 7.6 and 345 cm2/Vs were measured in pTFT and nTFT, respectively. These high mobility devices on SiO2 are the enabling technology for SoP and crucial for three‐dimensional brain‐mimicking integrated circuit (IC)‐ the technology trend for IC after reaching the quantum‐mechanical limit soon. [ABSTRACT FROM AUTHOR]

The growth per cycle saturation behaviors depending on the precursor pulse duration, reactant pulse duration, and reactant concentration were examined for hydrogen radical enhanced atomic layer deposition (REALD) of TaOx using tantalum-ethoxide as the precursor and plasma-activated hydrogen as the reactant. The chemical state of the TaOx film was dependent on the active hydrogen pulse duration and hydrogen volume fraction in the H2/Ar plasma mixture. The density of the electronic states in the dielectric band gap increased with the increase in the plasma exposure time (6–50 s) and hydrogen volume fraction (7–70%) whereas Ta4f core-level X-ray photoelectron spectroscopy indicated that the observed defects in the TaOx band gap are related to the oxygen deficiency. The ab initio calculations of oxygen deficiency concentrations and the energy spectrum satisfactorily correlated with the experimental data. The demonstrated combination of the growth saturation availability with the precise control of oxygen deficiency concentrations in the PEALD process could be highly useful in fields in which oxide dielectrics with adjustable oxygen deficiencies are required. [ABSTRACT FROM AUTHOR]

Abstract: X‐ray photoelectron spectroscopy, extended X‐ray absorption fine structure spectroscopy (EXAFS), X‐ray absorption near edge structure (XANES) spectroscopy, spectral ellipsometry, and quantum‐chemistry calculations are used to examine the atomic and electronic structure of nonstoichiometric amorphous ZrOx slightly enriched with zirconium. The experimental data show that the ZrOx material consists of stoichiometric ZrO2, metallic Zr, and zirconium suboxides ZrOy. A model of nanoscale spatial potential fluctuations in ZrOx is substantiated. In this model, the potential fluctuations for electrons and holes arise due to the local bandgap energy fluctuations in the range from 0 to 5.4 eV. A ZrOx‐based flash memory element with giant retention time is proposed. [ABSTRACT FROM AUTHOR]

We prove new lower bounds on the rate of codes for noisy multiple access adder channel and discuss its application to the well-known coin weighing problem in the case when some measurements are incorrect. [ABSTRACT FROM AUTHOR]

The charge transport mechanism of electron via traps in amorphous SiO2 has been studied. Electron transport is limited by phonon-assisted tunneling between traps. Thermal and optical trap energies Wt = 1:6 eV, Wopt = 3:2 eV, respectively, were determined. Charge flowing leads to oxygen vacancies generation, and the leakage current increases due to the increase of charge trap density. Long-time annealing at high temperatures decreased the leakage current to initial values due to oxygen vacancies recombination with interstitial oxygen. It is found that the oxygen vacancies act as electron traps in SiO2. [ABSTRACT FROM AUTHOR]

Silicon oxide (SiO2) and silicon oxynitride (SiOxNy) are two key dielectrics used in silicon devices. The excellent interface properties of these dielectrics with silicon have enabled the tremendous advancement of metal-oxide-semiconductor (MOS) technology. However, these dielectrics are still found to have pronounced amount of localized states which act as electron or hole traps and lead to the performance and reliability degradations of the MOS integrated circuits. A better understanding of the nature of these states will help to understand the constraints and lifetime performance of the MOS devices. Recently, due to the available of ab initio quantum-mechanical calculations and some synchrotron radiation experiments, substantial progress has been achieved in understanding the atomic and electronic nature of the defects in these dielectrics. In this review, the properties, formation and removal mechanisms of various defects in silicon oxide and silicon oxynitride films will be critically discussed. Some remarks on the thermal ionization energies in connection with the optical ionization energies of electron and hole traps, as well as some of the unsolved issues in these materials will be highlighted. [ABSTRACT FROM AUTHOR]

High-performance p-type thin-film transistors (pTFTs) are crucial for realizing low-power display-on-panel and monolithic three-dimensional integrated circuits. Unfortunately, it is difficult to achieve a high hole mobility of greater than 10 cm2/V·s, even for SnO TFTs with a unique single-hole band and a small hole effective mass. In this paper, we demonstrate a high-performance GeSn pTFT with a high field-effect hole mobility (μFE), of 41.8 cm2/V·s; a sharp turn-on subthreshold slope (SS), of 311 mV/dec, for low-voltage operation; and a large on-current/off-current (ION/IOFF) value, of 8.9 × 106. This remarkably high ION/IOFF is achieved using an ultra-thin nanosheet GeSn, with a thickness of only 7 nm. Although an even higher hole mobility (103.8 cm2/V·s) was obtained with a thicker GeSn channel, the IOFF increased rapidly and the poor ION/IOFF (75) was unsuitable for transistor applications. The high mobility is due to the small hole effective mass of GeSn, which is supported by first-principles electronic structure calculations. [ABSTRACT FROM AUTHOR]

Large device variation is a fundamental challenge for resistive random access memory (RRAM) array circuit. Improved device-to-device distributions of set and reset voltages in a SiNx RRAM device is realized via arsenic ion (As+) implantation. Besides, the As+-implanted SiNx RRAM device exhibits much tighter cycle-to-cycle distribution than the nonimplanted device. The As+-implanted SiNx device further exhibits excellent performance, which shows high stability and a large 1.73 × 103 resistance window at 85 °C retention for 104 s, and a large 103 resistance window after 105 cycles of the pulsed endurance test. The current–voltage characteristics of high- and low-resistance states were both analyzed as space-charge-limited conduction mechanism. From the simulated defect distribution in the SiNx layer, a microscopic model was established, and the formation and rupture of defect-conductive paths were proposed for the resistance switching behavior. Therefore, the reason for such high device performance can be attributed to the sufficient defects created by As+ implantation that leads to low forming and operation power. [ABSTRACT FROM AUTHOR]

Implementing high-performance n- and p-type thin-film transistors (TFTs) for monolithic three-dimensional (3D) integrated circuit (IC) and low-DC-power display is crucial. To achieve these goals, a top-gate transistor is preferred to a conventional bottom-gate structure. However, achieving high-performance top-gate p-TFT with good hole field-effect mobility (μFE) and large on-current/off-current (ION/IOFF) is challenging. In this report, coplanar top-gate nanosheet SnO p-TFT with high μFE of 4.4 cm2/Vs, large ION/IOFF of 1.2 × 105, and sharp transistor's turn-on subthreshold slopes (SS) of 526 mV/decade were achieved simultaneously. Secondary ion mass spectrometry analysis revealed that the excellent device integrity was strongly related to process temperature, because the HfO2/SnO interface and related μFE were degraded by Sn and Hf inter-diffusion at an elevated temperature due to weak Sn–O bond enthalpy. Oxygen content during process is also crucial because the hole-conductive p-type SnO channel is oxidized into oxygen-rich n-type SnO2 to demote the device performance. The hole μFE, ION/IOFF, and SS values obtained in this study are the best-reported data to date for top-gate p-TFT device, thus facilitating the development of monolithic 3D ICs on the backend dielectric of IC chips. [ABSTRACT FROM AUTHOR]

Metal-oxide thin-film transistors (TFTs) have been implanted for a display panel, but further mobility improvement is required for future applications. In this study, excellent performance was observed for top-gate coplanar binary SnO2 TFTs, with a high field-effect mobility (μFE) of 136 cm2/Vs, a large on-current/off-current (ION/IOFF) of 1.5 × 108, and steep subthreshold slopes of 108 mV/dec. Here, μFE represents the maximum among the top-gate TFTs made on an amorphous SiO2 substrate, with a maximum process temperature of ≤ 400 °C. In contrast to a bottom-gate device, a top-gate device is the standard structure for monolithic integrated circuits (ICs). Such a superb device integrity was achieved by using an ultra-thin SnO2 channel layer of 4.5 nm and an HfO2 gate dielectric with a 3 nm SiO2 interfacial layer between the SnO2 and HfO2. The inserted SiO2 layer is crucial for decreasing the charged defect scattering in the HfO2 and HfO2/SnO2 interfaces to increase the mobility. Such high μFE, large ION, and low IOFF top-gate SnO2 devices with a coplanar structure are important for display, dynamic random-access memory, and monolithic three-dimensional ICs. [ABSTRACT FROM AUTHOR]

Rare earth gadolinium oxide film has been studied by X-ray absorption fine structure (XAFS) at Gd L3-edge and energy electron loss spectroscopy (EELS) spectroscopies. XAFS data showed that the nearest Gd coordination shells consist of six oxygen atoms at ~2.308(2) Å and six gadolinium atoms at ~3.57(2) Å corresponding to Gd2O3 with a space group of Ia-3. EELS analysis of the film revealed excitations at the energies of 14.2, 19.9 eV which are due to electron transition from the valence band to the conductive one; excitations at the energies of 22.2–23.5 eV originated from valence electrons plasmon oscillations (bulk plasmons); and the excitation at 5.5 eV resulted from the electron transition at defects. When the photon energy changed from 1.5 to 5.0 eV the refractive index increased from 1.92 to 2.15. [ABSTRACT FROM AUTHOR]

X-ray photoelectron spectroscopy (XPS) and cathodoluminescence (CL) method have been employed to study the chemical composition and the oxygen vacancy concentration of HfO2, Sc2 O3 and (HfO2)1−x(Sc2O3)x films. It was found that the increase of Sc content led to monotonic decreasing the Hf4f7/2 and Sc2p3/2 binding energies indicating to form solid solution (HfO2)1−x(Sc2O3)x. All the samples characterized by the intensive CL spectra with maximum around 3 eV which originated due to some radiative recombination emission caused by oxygen deficiency. The concentration of oxygen vacancy in the Sc-doped HfO2 is sensitive to the Sc content and as a result the intensity of CL spectra of (HfO2)1−x(Sc2O3)x is lower that those of pure HfO2 and Sc2O3. [ABSTRACT FROM PUBLISHER]