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Focuses on a study which fabricated a double-barrier niobium tunnel junctions for quasiparticle mixers. Description of the fabrication process; Analysis of current-voltage curves; Discussion on the mixer experiments.

Investigates resonance steps in the current-voltage (I/V) characteristics of single junctions and arrays of two superconductor-insulator-superconductor junctions. Description of the inductive tuning structures; Resonance steps in the I/V characteristics; Resonance effects in series arrays.

Presents a study which examined the electric forming effect in lead/bismuth/indium-oxide-lead/bismuth tunnel junctions in terms of telegraph noise investigations before and after forming. Brief introduction to the forming process; Materials and methods used; Findings.

Presents a study which reported the increase of the normal-state resistance of niobium (Nb)-aluminum/AlO[subx]-Nb tunnel junctions by annealing at elevated temperatures. Method used in fabricating the junctions; Details on annealing in air and nitrogen; Nitridation of Nb microstrips.

Describes the properties of superconductor-insulator-normal (SIN) conductor junctions made from niobium-aluminum (Al)/Al-oxide-Al trilayers. Lowest double sideband receiver noise temperature; Incidence of energy gap in the Al counter electrode; Fabrication of SIN junctions.

A correction to the article "Electric forming and telegraph noise in tunnel junctions" that was published in a previous issue is presented.

This letter reports a low noise submillimeter-wave mixer using NbN tunnel junctions integrated in Nb matching circuits. The double side band receiver noise temperature was 245 K at 345 GHz. Plasma conditions for NbN film deposition on quartz substrates at room temperature are created by using a second Nb target as a selective nitrogen pump. Electrodes for tunnel junctions with critical temperatures above 15 K and normal state resistivities in the range from 130 to 160 μΩ cm were obtained. This permits integrating NbN junctions into normal metal or non-NbN superconducting matching circuits, which is of great interest for THz mixers. © 1996 American Institute of Physics. [ABSTRACT FROM AUTHOR]

We report on the change of normal resistance in tunnel junctions brought about by the application of a sufficiently large voltage at temperatures of 4.2 K and lower. This effect can be of use in various branches of electron and Cooper-pair tunneling, including the optimization of quasiparticle mixers. The voltage-induced change of the normal resistance can be reversed by warming up the sample to room temperature. [ABSTRACT FROM AUTHOR]