1. 300-nm-thick, ultralow-loss silicon nitride photonic integrated circuits by 8-in. foundry production.
- Author
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Zhang, Xuguang, Liang, Yuxin, Chen, Yujun, Shen, Bitao, Huang, Jiahui, Lao, Chenghao, Wu, Yichen, Li, Zhihui, Liu, Dapeng, Shu, Haowen, Hu, Weiwei, Wang, Xingjun, Cui, Naidi, and Chang, Lin
- Subjects
SILICON nitride ,NONLINEAR optics ,INTEGRATED circuits ,LASER ranging ,INSERTION loss (Telecommunication) - Abstract
Silicon nitride (Si
3 N4 ) photonic integrated circuits are rapidly developing in recent decades. The low loss of Si3 N4 attracts significant attention and facilitates a wide range of applications in integrated photonics. In this work, we demonstrate the foundry fabrication of a 300-nm-thick 8-in. wafer-scale Si3 N4 platform, with a microresonator intrinsic quality factor of up to 15 × 10 6 , corresponding to an ultralow loss of 2.2 dB/m. Leveraging this platform, we develop a mature process design kit, achieving a single-mode waveguide propagation loss of less than 5 dB/m, an edge coupler loss of 1.3 dB, and an insertion loss of 0.07 dB for multimode interference couplers. Utilizing the processed Si3 N4 chip, we realize a hybrid integrated tunable external cavity laser with a tuning range from 1534 to 1602 nm, a record-high side-mode suppression ratio of up to 76 dB, an optical power of 26 mW, and an intrinsic linewidth of down to 314 Hz. Our work lays a solid foundation for the further development of applications, including nonlinear optics, quantum optics, optical communications, and ranging. [ABSTRACT FROM AUTHOR]- Published
- 2024
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