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We developed a new seven-beam heterodyne receiver "7BEE" in the 72–116 GHz band for the Nobeyama 45 m telescope to investigate the early stage of star formation by deriving the deuterium fraction of dense cores. The optics for the receiver employs wideband corrugated horns covering the 72–116 GHz band and dielectric lenses to couple the incoming radiation from the antenna on to the feeds. One of the important aspects in the lens design is the anti-reflection (AR) structure to mitigate the reflections on the lens surfaces. Triangular grooves, which gradually change the effective refractive index from air to dielectric, were adopted as a basic AR design since the return loss can be in the order of 20 dB or better. The main goal of this study is to compare the radio frequency (RF) characteristics of the lenses with different patterns and sizes of AR grooving structures. We confirmed that concentric grooves degraded beam symmetry, cross-polarization characteristics, and aperture efficiency due to the birefringence of the grooves, which gave rise to wavefront distortions. Straight grooves of two different gap widths, 1.2 mm and 1.7 mm, were compared and showed similar good performance in terms of beam patterns and noise contribution. However, the latter showed a few percent higher aperture efficiency. Therefore, the straight grooves with 1.7 mm gap width were adopted as the AR structure of our lens. [ABSTRACT FROM AUTHOR]

We have developed a wideband receiver system for simultaneous observations in CO lines of J = 2–1 and J = 3–2 transitions using the Osaka 1.85 m mm–submm telescope. As a frequency separation system, we developed multiplexers that connect three types of diplexers, each consisting of branch-line couplers and high-pass filters. The radio frequency (RF) signal is eventually distributed into four frequency bands, each of which is fed to a superconductor–insulator–superconductor (SIS) mixer. The RF signal from the horn is divided into two frequency bands by a wideband diplexer with a fractional bandwidth of |$56\%$|⁠ , and then each frequency band is further divided into two bands by each diplexer. The developed multiplexers were designed, fabricated, and characterized using a vector network analyzer. The measurement results showed good agreement with the simulation. The receiver noise temperature was measured by connecting the SIS-mixers, one of which has a wideband 4–21 GHz intermediate frequency (IF) output. The receiver noise temperatures were measured to be ∼70 K in the 220 GHz band, ∼100 K in the 230 GHz band, 110–175 K in the 330 GHz band, and 150–250 K in the 345 GHz band. This receiver system has been installed on the 1.85 m telescope at the Nobeyama Radio Observatory. We succeeded in simultaneous observations of six CO isotopologue lines with the transitions of J = 2–1 and J = 3–2 toward the Orion KL as well as on-the-fly mappings toward the Orion KL and W 51. [ABSTRACT FROM AUTHOR]

The corrugated horn is a high-performance feed often used in radio telescopes. There has been a growing demand for wideband optics and corrugated horns in millimeter- and submillimeter-wave receivers as they improve observation efficiency and allow us to observe important emission lines such as CO in multiple excited states simultaneously. However, in the millimeter/submillimeter band, it has been challenging to create a conical corrugated horn with a fractional bandwidth of ∼60% because the wavelength is very short, making it difficult to make narrow corrugations. In this study we designed a conical corrugated horn with good return loss, low cross-polarization, and symmetric beam pattern in the 210–375 GHz band (56% fractional bandwidth) by optimizing the dimensions of the corrugations. The corrugated horn was installed on the Osaka 1.85 m mm–submm telescope with matched frequency-independent optics, and simultaneous observations of 12CO, 13CO, and C18O (J = 2–1, 3–2) were successfully made. We describe the new design of the corrugated horn and report the performance evaluation results including the optics. [ABSTRACT FROM AUTHOR]

In order to better understand the variation mechanism of ozone abundance in the middle atmosphere, the simultaneous monitoring of ozone and other minor molecular species, which are related to ozone depletion, is the most fundamental and critical method. A waveguide-type multiplexer was developed for the expansion of the observation frequency range of a millimeter-wave spectroradiometer, for the simultaneous observation of multiple molecular spectral lines. The proposed multiplexer contains a cascaded four-stage sideband-separating filter circuit. The waveguide circuit was designed based on electromagnetic analysis, and the pass frequency bands of stages 1–4 were 243–251 GHz, 227–235 GHz, 197–205 GHz, and 181–189 GHz. The insertion and return losses of the multiplexer were measured using vector network analyzers, each observation band was well-defined, and the bandwidths were appropriately specified. Moreover, the receiver noise temperature and the image rejection ratio (IRR) using the superconducting mixer at 4 K were measured. As a result, the increase in receiver noise due to the multiplexer compared with that of only the mixer can be attributed to the transmission loss of the waveguide circuit in the multiplexer. The IRRs were higher than 25 dB at the center of each observation band. This indicates that a high and stable IRR performance can be achieved by the waveguide-type multiplexer for the separation of sideband signals. [ABSTRACT FROM AUTHOR]

We report on the measurement results of the superconducting-ferromagnetic transistors (SFTs). The devices were made at Northwestern University and Hypres (SeeQC), Inc. (Nevirkovets et al., 2014; 2015). SFT is a multiterminal device with the SIS′FIFS (or SFIFS′IS) structure (where S, I, and F denote a superconductor, an insulator, and a ferromagnetic material, respectively) exploiting intense quasiparticle injection in order to modify the nonlinear I–V curve of a superconducting tunnel junction. SFT is capable of providing voltage, current, and power amplification while having good input/output isolation. We characterized the devices using different measurement techniques. We measured S parameters of the single- and double-acceptor devices at frequencies up to 5 MHz. Importantly, we confirmed that the isolation between the input and output of the device is quite good. However, the techniques typically employed to characterize semiconductor devices do not allow for revealing the full potential of our low-resistive SFT devices, especially those having two acceptors. In the latter case, we also tested the devices using the battery-powered current sources with floating grounds. Analyzing double-acceptor I–V curves recorded at different levels of injection currents, for an optimal load, we deduced a small-signal voltage gain of 33 and a power gain of 2.4. We suggest that further improvement of the SFT device parameters is possible in optimized devices, so that the device potentially may serve as a preamplifier for readout of output signals of cryogenic detectors and be useful as an element of other superconductor-based circuits. In addition, we used scanning transmission electron microscopy to identify some problems in the fabrication of the devices without any planarization. [ABSTRACT FROM AUTHOR]

This paper describes an on-wafer characterization system and calibration technique for frequency up and down converters based on a superconductor–insulator–superconductor (SIS) tunnel junction. The measurement system uses a 4-K probe station in combination with a vector network analyzer which allows measurement of both up- and down-conversion gains and reflection coefficients. We employed and verified a scalar mixer calibration technique for accurate characterization of the conversion properties. We present the detailed measurement technique and verification using an SIS frequency converter sample. [ABSTRACT FROM AUTHOR]

We have prepared an epitaxial niobium nitride (NbN) film and NbN/AlN/NbN tunnel junctions to investigate the energy gaps. By measuring the optical conductivity spectrum of a 41-nm-thick film with the critical temperature (TC) of about 14 K by terahertz time-domain spectroscopy, we obtained the gap frequency of about 1.2 THz. An ill-defined gap was suggested due to the broadening of the onset of absorption as the temperature increases. On the other hand, the current–voltage curve measurement of the tunnel junctions showed the current rise at the gap voltage of 5.6 mV (corresponding to 1.4 THz) with a smeared shape as the temperature increases. We found that both gap broadenings can be explained by introducing a temperature-dependent imaginary energy gap part into the superconducting energy gap, corresponding to a finite quasi-particle lifetime in the NbN films. [ABSTRACT FROM AUTHOR]

We fabricated silicon (100) membranes of 3 mm in diameter on the surface of silicon-on-insulator (SOI) substrates and investigated the characteristics of the membranes. The handle layer of one SOI substrate was etched using deep reactive ion etching process with the buried oxide (BOX) layer that remained together with the device layer. The BOX layer of the other SOI substrate was removed using C4F8-based plasma etching after the handle layer etching. The surfaces of both silicon (100) membranes were observed using the scanning white light interferometer system at room temperature. Both silicon (100) membranes have dome-like deformations. The silicon (100) membranes are effectively flattened by etching the BOX layer under the device layer. Both silicon (100) membranes were cooled from room temperature to 4 K by a Gifford-McMahon refrigerator. Wrinkles appeared on the surfaces of both silicon (100) membranes when the temperature dropped to about 200 K. However, the wrinkles disappeared below about 180 K. This phenomenon indicates the wrinkles at low temperature would depend on the properties of the silicon (100) of the device layers and independent of the properties of the BOX layers under the silicon (100) membranes. [ABSTRACT FROM AUTHOR]

We propose the use of SIS junctions as a frequency up-converter based on quasiparticle mixing in frequency division multiplexing circuits for multi-pixel heterodyne receivers. Our theoretical calculation showed that SIS junctions have the potential to achieve positive gain and low-noise characteristics in the frequency up-conversion process at local oscillator (LO) frequencies larger than the voltage scale of the dc nonlinearity of the SIS junction. We experimentally observed up-conversion gain in a mixer with four-series Nb-based SIS junctions at the LO frequency of 105 GHz for the first time. [ABSTRACT FROM AUTHOR]

-We have designed and fabricated a broadband short-slot hybrid coupler using a two-stage linear taper in W-band. The coupler consists of two metal pieces split at the edge of the narrow wall of the waveguide, which makes it possible to use simple direct machining for fabrication. The electrical performance of the coupler was measured by a Vector Network Analyzer (VNA) at room temperature. The results showed excellent performance as designed: amplitude imbalance between the two output ports of ≤ 1 dB, phase difference between the output ports with respect to 90° < 3°, input return loss < –15 dB, and isolation < –15 dB across the measured frequency range of 85-110 GHz. The short-slot hybrid coupler was used in a balanced Superconductor-Insulator-Superconductor (SIS) mixer at 4 K. The noise performance was almost the same as that of the two single-ended mixers used in the balanced mixer. These results indicate that our short-slot hybrid coupler has great potential for practical applications, such as at millimeter- and submillimeter-waves. [ABSTRACT FROM AUTHOR]

We have developed a dual polarization prototype model of the Atacama Large Millimeter/submillimeter Array (ALMA) Band 10 (787–950 GHz) receivers. The front-end optics comprises a pair of ellipsoidal mirrors, a wire grid, and two corrugated feed horns. A waveguide mixer block is attached to each feed horn in which a mixer chip employing Nb/AlOx/Nb juncions and NbTiN/SiO2/Al microstrip tuning circuits is mounted to a WR-1.2 full-height waveguide. A local oscillator (LO) signal receiving horn and a waveguide 10-dB LO coupler are integrated in the block to provide the LO signal to the mixer chip. A fixed-tuned multiplier with a diagonal horn located at the 110-K stage is used to transmit the LO power. The LO signal is then quasi-optically coupled to the mixer receiving horn. A very wide intermediate frequency (IF) system with a bandwidth of 4–12 GHz is employed. The receiver demonstrated double sideband (DSB) noise temperatures of about 160 K (4h\nu/kB) without any correction for loss in front of the receiver at the LO frequency of 834 GHz at an operating physical temperature of 4 K. [ABSTRACT FROM AUTHOR]

We have developed a low-noise heterodyne waveguide Superconductor-Insulator-Superconductor (SIS) mixer with a novel local oscillator (LO) injection scheme for the Atacama Large Millimeter/submillimeter Array (ALMA) band 10, over the frequency range 0.78-0.95 THz. The SIS mixer uses radio frequency (RF) and LO receiving horns separately and a waveguide 10 dB LO coupler integrated in the mixer block. The insertion loss of the waveguide and coupling factor of the coupler were evaluated at terahertz frequencies at both room and cryogenic temperatures. The double-sideband (DSB) receiver noise temperatures were below 330 K (7.5 hf/ k) at LO frequencies in the range 0.801-0.945 THz. The minimum temperature was 221 K at 0.873 THz over the intermediate frequency range of 4-12 GHz at an operating temperature of 4 K. This waveguide heterodyne SIS mixer exhibits great potential for practical applications, such as high-frequency receivers of the ALMA. [ABSTRACT FROM AUTHOR]

In this paper, we present the development of low-noise waveguide mixers with NbN/AlN/NbN tunnel junctions at a frequency approaching 1 THz. The mixer was designed to be compatible with MgO substrate. Mixers of the presented design demonstrated much improved receiver sensitivity. This improvement is attributed to the reduction in signal dissipation in waveguide and leakage into an intermediate frequency port by adopting a full-height waveguide and an effective RF choke filter, respectively. Two types of tuning circuits, namely parallel-connected twin-junction (PCTJ) and half-wavelength self-resonance distributed junction (DJ), are designed and evaluated. Both theoretical and experimental results show that the PCTJ design is superior to the DJ design in terms of gain and sensitivity due to smaller loss in the tuning circuit. [ABSTRACT FROM AUTHOR]

We report on the mixing properties of waveguide SIS mixers with epitaxial NbN/AIN/NbN junctions and NbN/SiO2 /NbTiN microstrips on MgO substrates. The superconducting transition temperature and 20-K resistivity of NbTiN film on the SiO2 dielectric were 14.7 K and 175 μΩcm, respectively. The junction tuning circuit was composed of an NbN/Si02 /NbTiN microstrip and two parallel-connected NbN/AIN/NbN junctions 0.9 μm in diameter. The critical current density and normal-state resistance of the fabricated NbN junction were 13 kA/cm2 and 22 Ω, respectively. The heterodyne response was measured using 295. and 77-K blackbody sources, a local oscillator (LO) source, and a 25-μm-thick Kapton film as a beam splitter. An intermediate frequency (IF) amplifier with a bandwidth of 4-12 GHz was used in the measurements. The receiver noise temperature corrected for losses in the beam splitter and in the vacuum window of the cryocooler was 370 K at 860 GHz and was comparable to that of all-NbN mixes with NbN/MgO/NbN microstrips. [ABSTRACT FROM AUTHOR]

We have designed, fabricated, and tested terahertz waveguide superconductor-insulator-superconductor (SIS) mixers with Nb/A1Ox/Nb junctions and NbN/SiO2/AI microstriplines. The NbN ground plane used was an epitaxial film grown on a single-crystal MgO substrate. A two-junction tuning circuit, which was directly placed at the feed point of a bow-tie waveguide probe without impedance transformers, was used. A full-height waveguide, hammer-type choke filter, and zero-depth backshort were adopted for the design of the microstrip-waveguide transition structure. The Nb junctions in which the current density was 6.5 kA/cm2 showed good I V characteristics, yielding a subgap-to-normal-state resistance ratio greater than 20. The results obtained for the mixer performance showed a receiver noise temperature of 440 K (DSB) at 1 THz; the results were corrected for losses in the beam splitter and the vacuum window. A detailed analysis of the mixers suggested that the waveguide mixers composed of epitaxial NbN films and Nb junctions were effective in the terahertz band. [ABSTRACT FROM AUTHOR]

A new structure and a fabrication process for multi-material THz-SIS mixers are proposed. In this design, both the micrometer-sized SIS trilayers (MTLs: microtrilayers) and the ground plane are deposited directly onto the substrate. This structure is expected to possess a number of unique features, e.g., (1) the quality of the SIS junction is not affected by the physical nature of the ground plane film; (2) the heat can escape directly from the junction into the substrate. The influence of the MTL-structure on the junction quality and circuit characteristics have been investigated. Numerical calculation suggests that the extra rf loss around the junction can be kept small if the offset between the junction and the ground plane is less than 1 μm. MTL-SIS mixers have been fabricated using Nb/A1-AIN(or Al — A1Ox,)/Nb SIS junctions and NbTiN/Al microstrip lines. The leakage current of the SIS junction can be made as small as that of the best all-Nb devices. The MTL-SIS structure will be useful in the development of future THz SIS mixers. The abstract goes here. [ABSTRACT FROM AUTHOR]

We have successfully demonstrated a low-noise 0.78–0.95-THz waveguide mixer based on Nb/AlOx/Nb superconductor–insulator–superconductor (SIS) junctions integrated with an NbTiN/SiO2/Al superconducting inverted microstrip. The mixer employs a twin-junction tuning circuit and an impedance transformer which are designed to achieve both low noise and wideband operation. Corrected for optical input losses in front of the mixer, the double-sideband (DSB) noise temperature is below 120 K (<3 hf/kB) around the local oscillator (LO) frequency of 0.88 THz and at an operating temperature of 2 K. The results represent state-of-the-art performance for mixers in the terahertz frequency range. [ABSTRACT FROM AUTHOR]