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Investigates the performance of several III-V compound semiconductor devices. Significance of higher temperature tolerance in semiconductor devices; List of their weakpoints with regards to temperature increase.

Presents information on a study that examined a double ion-implant Ti-salicide technology for high-performance complementary metal oxide semiconductor devices. Background on Ti-salicide technology; Methodology of the study; Results and discussion.

A new approach to improve the high-voltage vertical double diffused MOSFET (VDMOSFET) body-diode recovery speed is proposed. In this approach, a Schottky contact is integrated into every cell of the VDMOSFET. Experimental results from the fabricated samples show a 50% decrease in the reverse recovery charge and a 60% increase in the softness factor of the body diode in 500 V/2 A VDMOSFETs. [ABSTRACT FROM AUTHOR]

The temperature-dependent characteristics of silicon diffused resistors are demonstrated and studied. Based on the presence of a silicide/silicon junction, the device size plays an important role on diffused resistor behaviours. From experimental and theoretical analysis, some important parameters, e.g. the interface resistance (R[sub interface]), sheet resistance (R[sub bulk]), deviations of resistor length (ΔL) and width (ΔW) are obtained. Also, anomalous phenomena of temperature coefficient of resistance (TCR) are found. [ABSTRACT FROM AUTHOR]