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A top-down approach of forming SiGe-nanowire (SGNW) MOSFET, with Ge concentration modulated along the source/drain (Si0.7Geo.3) to channel (Sio.3Geo.7) regions, is presented. Fabricated by utilizing a pattern-size-dependent Ge-condensation technique, the SGNW heterostructure PMOS device exhibits 4.5x enhancement in the drive current and transconductance (Gm) as compared to the homojunction planar device (Sio.7Ge0.3). This large enhancement can be attributed to several factors including ¦-gated nanowire structure, enhanced hole in- jection efficiency (due to valence band offset), and improved hole mobility (due to compressive strain and Ge enrichment in the nanowire channel). [ABSTRACT FROM AUTHOR]

This paper demonstrates gate-all-around (GAA) n- and p-FETs on a silicon-on-insulator with ≤5-nm-diameter laterally formed Si nanowire channel. Alternating phase shift mask lithography and self-limiting oxidation techniques were utilized to form 140- to 1000-nm-long nanowires, followed by FET fabrication. The devices exhibit excellent electrostatic control, e.g., near ideal subthreshold slope (∼ 63 mV/dec), low drain-induced barrier lowering (∼ 10 mV/V), and with ION/IOFF ratio of ∼ 106. High drive currents of ∼ 1.5 and ∼ 1.0 mA/μm were achieved for 180-nm-long n- and p-FETs, respectively. It is verified that the threshold voltage of GAA FETs is independent of substrate bias due to the complete electrostatic shielding of the channel body. [ABSTRACT FROM AUTHOR]

A 1.9 µm hybrid silicon/III‐V laser based on a wafer bonding technique is reported. The gain materials are InGaAs multiple quantum wells grown on InP substrate, with strain compensation between barriers and wells. The III‐V wafer is bonded to a silicon‐on‐insulator wafer with processed silicon waveguides and transition tapers. Laser emission with a threshold current of 95 mA at room temperature and 45 mA at 5 °C is demonstrated. [ABSTRACT FROM AUTHOR]

Horizontal Al/SiO2/Si/SiO2/Al nanoplasmonic slot waveguides with the SiO2 width at each side of ∼15 nm and the Si core width of ∼136-43 nm were fabricated using a fully silicon complementary metal-oxide-semiconductor compatible technology. The propagation losses were measured to be ∼1.07-1.63 dB/μm at the telecommunication wavelength of 1550 nm, in agreement with those predicted from numerical simulation. A simple tapered coupler with length of ∼0.3-1 μm provides a high coupling efficiency of ∼-0.6--1.5 dB between the plasmonic waveguide and the conventional Si dielectric waveguide. The plasmonic slot waveguide can achieve a low-loss ultracompact bend. A direct 90° bend was demonstrated to have the pure bending loss as low as ∼0.2-0.4 dB. The losses of propagation, coupling, and bending depend weakly on wavelength in the c-band. These results demonstrate the potential for seamless integration of functional plasmonic devices in existing silicon electronic photonic integrated circuits. [ABSTRACT FROM AUTHOR]

Abstract-We demonstrated, for the first time, p-MOSFETs (L[subG] ⩾ 40 nm) with SiGe/Si core/shell channel integrated on bulk Si using a CMOS-compatible top-down processes. The Omega-shaped nanowire (NW)-like channels comprised of ∼12-nm-thick inner SiGe core and 4-nm-thick outer Si shell. The devices exhibited good subthreshold characteristics (with SS ∼128 mV/dec), suggesting successful surface passivation of the SiGe NW body by the outer Si capping layer. Drive currents of ∼167 μA/μm is achieved, which is 15% enhancement over the reference Si-channel devices fabricated by the same process. Double g[subm] peaks are observed at low drain bias for the core/shell SiGe NW devices, confirming the quantum confinement of holes in the SiGe inner core. [ABSTRACT FROM AUTHOR]

This letter demonstrates successful integration of Gate-All-Around (GAA) nanowire (NW) transistors with low- resistivity metallic NW point contacts at source/drain extensions. Ultrascaled GAA silicon NW transistors with gate lengths down to 8 nm have been achieved, exhibiting good performance among the NW FETs reported to date. Compared to the reference devices, the metallic contact NW devices show 580% enhancement in ION from 103 to 705 μA/μm., at a fixed IOFF of 10 nA/μm. Nickel suicide resistivity for ultrathin films is also investigated in this letter for the integration of salicided source/drain extensions with the GAA NW process. Experimental results show that 4 nm of deposited Ni is suitable for forming NW contacts with 10-nm diameters, which is thin enough to avoid oversilicidation while meeting the low-resistivity requirements. [ABSTRACT FROM AUTHOR]

In this work, we investigate the effect of energy band profile modulation on carrier backscattering in SiGe nanowire (SGNW) heterojunction p-channel field effect transistors. The energy band profile is modulated by increasing the Ge mole fraction in nanowire channels as compared to source/drain regions using the pattern-dependent Ge condensation technique. The carrier backscattering characteristics of the fabricated heterojunction p-type SGNW transistors, extracted using a temperature-dependent analytical model, exhibited a decrease of 19% in hole backscattering coefficient in comparison to the reference planar devices with uniform Ge concentration. The reduction in backscattering coefficient is attributed to KT/q barrier layer thinning of the source-to-channel barrier for the holes as a result of the modulation in energy band profile caused by variation in Ge concentration. [ABSTRACT FROM AUTHOR]