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Swift heavy Ta ions with an ultra-high energy of 2896 MeV are utilized for irradiation of β-Ga2O3 photodetectors. Noteworthy variations in device performance under different wavelengths are observed. Under 254 nm light illumination, the photocurrent of the devices exhibit degradation at low ion fluences but gradually recover and even surpass the performance of non-irradiated devices at the irradiation fluence of 1 × 1010 cm−2. Conversely, under 365 nm light illumination, photocurrent increases at low fluence but slightly decreases at the same high fluence of 1 × 1010 cm−2. Cathodoluminescence spectra and first-principles calculations elucidate the mechanism underlying the evolution of device performance with irradiation fluence. At low irradiation fluence, the introduction of point defects such as oxygen vacancies and gallium vacancies leads to an expansion of the bandgap, resulting in a decline in photocurrent under 254 nm light illumination. Additionally, deep defect levels are generated by these point defects, promoting an enhancement of photocurrent under 365 nm light illumination. Higher fluences transform these point defects into complex defects such as Ga–O pair vacancies, resulting in a reduction in the bandgap. Consequently, an increase in photocurrent is observed for devices illuminated with 254 nm light. However, at high irradiation fluences, charge recombination induced by the presence of deep defect levels becomes more significant, leading to a decrease in photocurrent when exposed to 365 nm light. No matter what, at 1 × 1010 cm−2 fluence, β-Ga2O3 photodetectors still maintain excellent performance, implying their strong radiation resistance and immense potential for application in space environments. [ABSTRACT FROM AUTHOR]

Zinc-air batteries (ZABs) are potential energy storage and conversion devices, but the poor performances of bifunctional electrocatalysts at the cathode are becoming a bottleneck. Herein, we first chose the rare-earth metal cerium (Ce) as the source to synthesize the amorphous/crystal hybrid Ce/Ce2O2S-MS Mott-Schottky heterojunction. Among the Ce/Ce2O2S-MS series, the Ce/Ce2O2S1-x-MS shows the best bifunctional electrocatalytic performances with the half-wave potential of 0.76 V for ORR and OER potential of 1.59 V at 10 mA cm−2, and the ΔE value is 0.83 V. The special 4f structure of Ce combined with the Mott-Schottky heterojunction provides full active sites and promotes electron transfer at the interface of heterojunction. Our study provides a potential conception for Ce-based bifunctional electrocatalysts applied in the ZABs. [ABSTRACT FROM AUTHOR]

Basic electrolyzed water is prepared by electrolyzing dilute salt solution, which is widely used in the research of food field with the advantages of green safety, broad-spectrum sterilization, efficient preservation and low price. BEW possesses high pH and reduction potential, and strong penetration, which makes it show great application potential in the fields of food sterilization, processing, preservation and extraction. This paper reviews the application and research progress of BEW in food in recent years, and focuses on the latest progress of the application of BEW in food safety control, food preservation application and food active substance extraction, in order to provide theoretical guidance and methodological reference for the efficient utilization and further research of BEW in the field of food. [ABSTRACT FROM AUTHOR]

The radar constant calibration in incoherent scatter radar ion line processing is essential for the data quality and was not paid enough attention in previous studies. In this investigation, based on several experiments made by the newly built Sanya incoherent scatter radar (SYISR), we made and evaluated the ion line calibration by plasma line both in case study and statistically. The calibration factor had local time and altitude variations, due to the corresponding variations of the transmitted power, the radar gain, and the noise temperature. We obtained a mean calibration factor of 1.35 by the simultaneous measured plasma line and ion line electron density and applied it to a one-month ion line observation calibration. Through a co-located ionosonde measured foF2 evaluation, the calibration decreased the mean deviation from −1.92 MHz (−18%) to −0.33 MHz (−3%), which resulted in much better agreement between the ion line foF2 after calibration and the ionosonde results. The existed deviations between after calibration and ionosonde results were due to the uncertainties either in the used calibration factor or the ionosonde measurements. An empirical Te/Ti usage in raw electron density estimation and ignoring the seasonal and short-term variations of the effecting factors might influence the calibration performance. Using the to-be-completed SYISR Tristatic System, the performance of plasma line calibration technique is expected to be improved in the future. [ABSTRACT FROM AUTHOR]

The purpose of this article is to provide insight into ambipolar transport properties of the CMOS-like pseudo-inverter ($\Psi $ -inverter) in silicon-on-insulator (SOI) substrate. The $\Psi $ -inverter demonstrated in this work simply uses three probes instead of metal contact. The channel is controlled by the bottom gate and shows ambipolar conduction. The ambipolar voltage transfer characteristics (VTC) from the Si thin-film layer of the SOI device is extracted. The $\Psi $ -inverter operates both in the first and third quadrants, achieving remarkable gains as high as 25.8 and 936.1 at drain voltages ${V}_{{\mathrm {DD}}}$ = 3 and 7 V, respectively. Moreover, TCAD simulated results are approximated to the experimental data considering top Si interface traps to reveal the electrostatic potential and carrier concentration profiles. Exceptionally sensitive surface properties and high gain of the $\Psi $ -inverter demonstrated in our work enable it a promising candidate for sensor applications. [ABSTRACT FROM AUTHOR]

Led by the Institute of Geology and Geophysics, Chinese Academy of Sciences, we have built a brand‐new modular active digital phased array, with all solid‐state transmission and digital receiving incoherent scatter radar (ISR) in Sanya (18.3°N, 109.6°E), a station in low latitude China called Sanya ISR (SYISR) since 2015. The development of SYISR involved the indoor design and development of key components, an outdoor prototype test, and the production and debugging of the entire array. The unique features of SYISR include a single‐channel directly connected T/R unit and antenna, a radar array monitoring and calibration network, environmental adaptability design and open architecture. The entire radar has 4,096 channels and 5,930 modules in total. All the technical indices, mainly including a >2 MW peak power, a 43 dBi antenna gain and a <120 K noise temperature, either meet or are superior to the designed value through an independent evaluation. Waveforms of single pulse, linear frequency modulation, Barker code, long pulse and alternating code have been implemented to meet multiple purposes. Four observational modes for ionospheric experiments, including zenith stare, perpendicular to geomagnetic field, meridian scan, and all sky scan, have been developed. We have implemented time domain decoding, frequency domain decoding, and statistical inversion methods in calculating the autocorrelation function and power spectra in signal processing. The preliminary experimental results on ionospheric parameters, plasma lines, irregularities and hard targets are reasonable and encouraging, which greatly enhances our confidence in achieving our scientific goals in the future. Plain Language Summary: The Earth's ionosphere (∼60–1,000 km above the sea level) is composed of dense plasma, which shows complicated variations versus altitude, geographic location, and solar activity level. When a ground‐based radio wave is transmitted onto these plasmas, it will generate stimulated radiation, with a small portion of them radiating back to the ground. If this backscattered radiation is collected by a ground‐based radar, a variety of ionospheric parameters, including plasma density, temperature, and movement speed, can be derived through a complicated signal processing algorithm. An ionospheric monitoring method called incoherent scatter radar (ISR) was therefore developed. However, since this backscattered radiation is very weak, the ISR should be built with sufficiently large power (usually megawatts) and apertures (usually hundreds of square meters). This leads to the high cost of building an ISR, with only a few having been built in the world thus far. In this paper, we describe a newly built ISR, called Sanya ISR (SYISR), in low latitude China by applying modern radar technologies, such as modular active digital phased arrays, all solid‐state transmitting and digital receiving. The development of SYISR followed the principle of a gradual and orderly progress, including indoor design, outdoor prototype testing and the entire radar construction and debugging. The radar technical indices have been evaluated, and all meet the designed value. We also developed a signal processing algorithm and a variety of observational modes. Finally, preliminary experimental results are shown, which are reasonable and encouraging. In the future, we will gradually achieve our scientific goals via effective data accumulation and analysis. Key Points: Sanya incoherent scatter radar (SYISR) is a newly built incoherent scatter radar in low latitude China with modular active electronic scanning, digital phased array, solid‐state transmitting, and digital receivingThis paper details the hardware, key parameters, data processing and preliminary experimental results of SYISRThe key parameters meet or are superior to the original design, and the preliminary observations are encouraging [ABSTRACT FROM AUTHOR]

To mitigate the total ionizing dose (TID) radiation impact, a new structure named double-silicon-on-insulator (DSOI) is introduced in this article. This new structure exhibits potential benefits of reducing the radiation-induced degradation effectively and independently, thanks to the additional electrode, which can be used to control the internal electrical field of the device. With this structure, the TID response and TID mitigation strategy using back-bias are discussed in DSOI nMOSFETs. Then, a 3-D TCAD simulation model is proposed to analyze the radiation-induced leakage path for each bias configuration. The impact of negative back-bias during irradiation on trapped charge distribution is given for both buried oxide layer and shallow trench isolation. At last, a 4k-bit static random access memory is used to verify the effectiveness of back-bias on TID-induced leakage current suppression at the circuit level. The experimental results show the possibility of using back-bias against TID threat. [ABSTRACT FROM AUTHOR]

The synergetic effects of total ionization dose and high-temperature stress of silicon on insulator (SOI) FinFETs (FF) are investigated under ON-state bias condition. The experiments and TCAD simulations are employed to analyze the influence of different trapped-charges in the gate and buried oxide on the threshold voltage and mobility variations on the ON-state current of the devices. Results show that the threshold voltage degradation worsens for n-SOI FinFETs but weakens for the p-SOI FinFETs. Also, the ON-state current of n-SOI FinFETs is significantly enhanced, while the change of p-SOI FinFETs is weak under the synergetic effects. The threshold voltage degradation induced by synergetic effects for both n- and p-type SOI FinFETs can exceed the linear superposition of the two types of stresses, which may be related to the thermal release of trapped charges in the gate oxide. The enhanced degradation in the n-SOI FinFETs compared with the p-SOI FinFETs may result from the shallow energy level electron traps in HfO2. Besides, for both n- and p-type SOI FinFETs, the ON-state current variations under the synergetic effects depend on the competitive process of threshold voltage variation and the mobility fluctuation. [ABSTRACT FROM AUTHOR]

An 8T cell is proposed to improve reliability and radiation tolerance of the static random access memory (SRAM) physical unclonable function (PUF) which is formed by adding two cascode pMOS transistors biased at the ON-state to standard 6T cell. Two custom SRAM PUFs in the same batch consisting of 6T cells and 8T cells using the 28 nm fully depleted silicon on insulator (FDSOI) process were used to evaluate the characteristics with respect to bit error rate (BER) and interchip Hamming distance (HD) with an increase in Co-60 total ionizing dose (TID), various supply voltages, ramp-up time, and temperature. According to the experimental result, the BER of the proposed SRAM PUF decreased by $2\times $ under various conditions with better radiation tolerance compared with the 6T one. Both kinds of SRAM PUF have similar interchip HD closed to 50%, but the proposed prototype has less variation, thanks to better reliability. When supply voltage, ramp-up time, and temperature conditions were set to 400 mV, 100 ms, and 25 °C, respectively, the proposed SRAM PUF can achieve the lowest BER of only 0.72%. Some design tips of reliable and rad-hard SRAM PUF are given as design guidance. [ABSTRACT FROM AUTHOR]

The dependence of temperature and back-gate bias on single-event upset (SEU) sensitivity is investigated based on a 0.2- $\mu \text{m}$ double silicon-on-insulator (DSOI) technology. At room temperature, an obvious decrease in SEU cross section with the negative back-gate bias is experimentally observed for a DSOI static random access memory (SRAM). The physical mechanism of single-event effect (SEE) is explained through technology computer-aided design (TCAD) simulations. TCAD simulations were also performed to explain the impact of back-gate bias on charge collection and full width at half maximum (FWHM) of the pulsewidth at various temperatures. Both charge collection and FWHM of the pulsewidth increase significantly with temperature rising from 240 to 400 K. It is demonstrated that the SEU threshold linear energy transfer (LET) for a DSOI 6T SRAM cell decreases with an increase in temperature. Compared with a fully depleted SOI (FDSOI) technology, the unique independent back-gate bias scheme for a DSOI SRAM cell exhibits higher tolerance to SEU. At 400 K, it is found that the SEU threshold LET (LETth) for a DSOI 6T SRAM cell increases by 12.5% with back-gate bias of nMOS reduced from 0 to −15 V. [ABSTRACT FROM AUTHOR]

Metabolism rewiring is an important hallmark of cancers. Being one of the most abundant free amino acids in the human blood, glutamine supports bioenergetics and biosynthesis, tumor growth, and the production of antioxidants through glutaminolysis in cancers. In glutamine dependent cancer cells, more than half of the tricarboxylic/critic acid (TCA) metabolites are derived from glutamine. Glutaminolysis controls the process of converting glutamine into TCA cycle metabolites through the regulation of multiple enzymes, among which the glutaminase shows the importance as the very first step in this process. Targeting glutaminolysis via glutaminase inhibition emerges as a promising strategy to disrupt cancer metabolism and tumor progression. Here, we review the regulation of glutaminase and the role of glutaminase in cancer metabolism and metastasis. Furthermore, we highlight the glutaminase inhibitor based metabolic therapy strategy and their potential applications in clinical scenarios. [ABSTRACT FROM AUTHOR]

Three-dimensional TCAD device simulation is carried out to study single-event effects in silicon nanowire devices. The results show that charge collection appears in silicon nanowire devices following the incidence of heavy ions, which is similar to what is observed in a traditional MOSFET. The charge collection mechanism is analyzed in detail. We find that a significant amplification bipolar effect exists in the charge collection process, enhancing the charge collection manifold. The effects of the doping type and the channel length on the charge collection are studied, and the charge collection is compared with that in bulk CMOS transistors. Furthermore, single-event responses are studied in an inverter consisting of nanowire transistors. [ABSTRACT FROM PUBLISHER]

An extraction method of the interface-trap densities (Dit) of the stacked bonding structure in 3D integration using high-frequency capacitance–voltage technique is proposed. First, an accurate high-frequency capacitance–voltage model is derived. Next, by numerically solving the charge-balance equation and charge conservation equation, Dit is extracted by fitting the measured and calculated capacitance–voltage curves based on the derived model. Subsequently, the accuracy of the derived model is verified by the agreements between the analytical results and TCAD simulation results. The average extraction error proves the precision and efficiency of the extraction method. Finally, the stacked bonding structure has been fabricated, and Dit at the interface between silicon and insulator is extracted to diagnose and calibrate the fabrication processes. [ABSTRACT FROM AUTHOR]

An analytical model is proposed to calculate single event transient (SET) pulse width with bulk complementary metal oxide semiconductor (CMOS) technology based on the physics of semiconductor devices. Combining with the most prevalent negative bias temperature instability (NBTI) degradation model, a novel analytical model is developed to predict the time evolution of the NBTI induced SET broadening in the production, and NBTI experiments and three-dimensional numerical device simulations are used to verify the model. At the same time, an analytical model to predict the time evolution of the NBTI induced SET broadening in the propagation is also proposed, and NBTI experiments and the simulation program with integrated circuit emphasis (SPICE) are used to verify the proposed model. [ABSTRACT FROM AUTHOR]

In this paper, compared with two-transistor (2T) inverter chain, the production and propagation of P-hit single event transient (SET) in three-transistor (3T) inverter chain is studied in depth based on three-dimensional numerical simulations in a 90 nm bulk complementary metal oxide semiconductor (CMOS) technology. The pulse attenuation effect is found in 3T inverter chain, and the pulse can not completely propagate through the inverter chain as LET increases. The discovery will provide a new insight into SET hardened design, the 3T inverter layout structure (or similar layout structures) will be a better method in integrated circuits (ICs) design in radiation environment. [ABSTRACT FROM AUTHOR]

The change of P deep well doping will affect the charge collection of the active and passive devices in nano-technology, thus affecting the propagated single event transient (SET) pulsewidths in circuits. The propagated SET pulsewidths can be quenched by reducing the doping of P deep well in the appropriate range. The study shows that the doping of P deep well mainly affects the bipolar amplification component of SET current, and that changing the P deep well doping has little effect on NMOS but great effect on PMOS. [ABSTRACT FROM AUTHOR]

We propose a new method to extract the gain of the parasitic bipolar transistor in ultrathin fully-depleted silicon-on-insulator MOSFETs. The method is based on the modulation of the parasitic bipolar effect by back-gate biasing. The bipolar gain can be determined for each transistor, without the need to compare the long and short devices. The proposed method is validated by experimental data and numerical simulations. [ABSTRACT FROM PUBLISHER]

Simple Summary: The multidrug resistance of EAC is one of the major obstacles to chemotherapeutic efficiency. Our study aims to explore the molecular mechanism of AKR1C3 as a novel therapeutic target to overcome chemotherapy resistance for EAC patients. We demonstrate that AKR1C3 renders chemotherapy resistance through controlling cellular ROS levels via AKT signaling in EAC cells. Modulation of intracellular GSH levels by AKR1C3 could scavenge the intracellular ROS, thus regulating apoptosis. Targeting AKR1C3 may represent a novel strategy to sensitize EAC cells to conventional chemotherapy treatment and benefit the overall survival of patients diagnosed with EAC. Esophageal adenocarcinoma (EAC) is one of the most lethal malignancies, and limits promising treatments. AKR1C3 represents a therapeutic target to combat the resistance in many cancers. However, the molecular mechanism of AKR1C3 in the chemotherapy resistance of EAC is still unclear. We found that the mRNA level of AKR1C3 was higher in EAC tumor tissues, and that high AKR1C3 expression might be associated with poor overall survival of EAC patients. AKR1C3 overexpression decreased cell death induced by chemotherapeutics, while knockdown of AKR1C3 attenuated the effect. Furthermore, we found AKR1C3 was inversely correlated with ROS production. Antioxidant NAC rescued chemotherapy-induced apoptosis in AKR1C3 knockdown cells, while the GSH biosynthesis inhibitor BSO reversed a protective effect of AKR1C3 against chemotherapy. AKT phosphorylation was regulated by AKR1C3 and might be responsible for eliminating over-produced ROS in EAC cells. Intracellular GSH levels were modulated by AKR1C3 and the inhibition of AKT could reduce GSH level in EAC cells. Here, we reported for the first time that AKR1C3 renders chemotherapy resistance through controlling ROS levels via AKT signaling in EAC cells. Targeting AKR1C3 may represent a novel strategy to sensitize EAC cells to conventional chemotherapy. [ABSTRACT FROM AUTHOR]

Esophageal cancer (EC) is an aggressive form of cancer, including squamous cell carcinoma (ESCC) and adenocarcinoma (EAC) as two predominant histological subtypes. Accumulating evidence supports the existence of cancer stem cells (CSCs) able to initiate and maintain EAC or ESCC. In this review, we aim to collect the current evidence on CSCs in esophageal cancer, including the biomarkers/characterization strategies of CSCs, heterogeneity of CSCs, and the key signaling pathways (Wnt/β-catenin, Notch, Hedgehog, YAP, JAK/STAT3) in modulating CSCs during esophageal cancer progression. Exploring the molecular mechanisms of therapy resistance in EC highlights DNA damage response (DDR), metabolic reprogramming, epithelial mesenchymal transition (EMT), and the role of the crosstalk of CSCs and their niche in the tumor progression. According to these molecular findings, potential therapeutic implications of targeting esophageal CSCs may provide novel strategies for the clinical management of esophageal cancer. [ABSTRACT FROM AUTHOR]