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UV curable release films have been prepared from acrylated polysiloxane and hyperbranched acrylated polysiloxane. The effects of raw material ratio on the peeling force and residual adhesion of release films are discussed, whose aging resistance has been characterized by Fourier transform infrared spectroscopy, differential scanning calorimetry and thermogravimetric analysis. The results show that the mass ratio of acrylated polysiloxane to hyperbranched acrylated polysiloxane is 70-30. The peeling force of release film is 9. 00 mN/25 mm and the residual adhesion rate is 93%. After aging at 40 °C and 75% relative humidity for 1~3 months, the release film has the peel force of 6. 94 mN/25 mm and the residual adhesion rate of 86%. The release film contains polyethylene and polysiloxane, has phase transition at 128 °C and 160 °C, and keeps stable below 400 °C. The film is a light curing silicone release film with good aging resistance, which can meet the requirements of peeling force and residual adhesion rate in the field of personal care products. [ABSTRACT FROM AUTHOR]

This study investigated the effects of KLDS 1.8701 and AD1 administrations by gavage on intestinal microflora and mucosal immunity in diarrhea mice infected by Escherichia coli O157:H7 compared to normal mice. The levels of E. coli, Enterobacteria, and Enterococcus decreased significantly ( P < 0.05), while viable counts of Lactobacilli and Bifidobacterium increased in diarrhea mice. Moreover, KLDS 1.8701 and AD1 improved secretion of secretory immunoglobulin A and enhanced the levels of interferon- γ and interleukin. Results indicate that KLDS 1.8701 and AD1 could effectively alleviate diarrhea in mice via modulation of intestinal microflora and improve the function of immune system. The study on the effect of KLDS1.8701 and AD1 supplementation in human flora-associated animal models was recommended. [ABSTRACT FROM AUTHOR]

Purpose: To explore the feasibility of pulsed current annealing in reusing metal oxide semiconductor field-effect transistor (MOSFET) dosimeters for in vivo intensity modulated radiation therapy (IMRT) dosimetry. Methods: Several MOSFETs were irradiated at dmax using a 6 MV x-ray beam with 5 V on the gate and annealed with zero bias at room temperature. The percentage recovery of threshold voltage shift during multiple irradiation-annealing cycles was evaluated. Key dosimetry characteristics of the annealed MOSFET such as the dosimeter's sensitivity, reproducibility, dose linearity, and linearity of response within the dynamic range were investigated. The initial results of using the annealed MOSFETs for IMRT dosimetry practice were also presented. Results: More than 95% of threshold voltage shift can be recovered after 24-pulse current continuous annealing in 16 min. The mean sensitivity degradation was found to be 1.28%, ranging from 1.17% to 1.52%, during multiple annealing procedures. Other important characteristics of the annealed MOSFET remained nearly consistent before and after annealing. Our results showed there was no statistically significant difference between the annealed MOSFETs and their control samples in absolute dose measurements for IMRT QA (p = 0.99). The MOSFET measurements agreed with the ion chamber results on an average of 0.16% ± 0.64%. Conclusions: Pulsed current annealing provides a practical option for reusing MOSFETs to extend their operational lifetime. The current annealing circuit can be integrated into the reader, making the annealing procedure fully automatic. [ABSTRACT FROM AUTHOR]