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A series of ZnxFe3-xO4 (ZFO, x=0.4) thin films were epitaxially deposited on single-crystal (001)-SrTiO3 (STO) substrates by radio frequency magnetron sputtering. The anomalous thickness-dependent strain states of ZFO films were found, i.e., a tensile in-plane strain exists in the thinner ZFO film and which monotonously turns into compressive in the thicker films. Considering the lattice constant of bulk ZFO is bigger than that of STO, this strain state cannot be explained in the conventional framework of lattice-mismatch-induced strain in the hetero-epitaxial system. This unusual phenomenon is proposed to be closely related to the Volmer-Weber film growth mode in the thinner films and incorporation of the interstitial atoms into the island's boundaries during subsequent epitaxial growth of the thicker films. The ZFO/STO epitaxial film is found in the nature of magnetic semiconductor by transport measurements. The in-plane magnetization of the ZFO/STO films is found to increase as the in-plane compressive strain develops, which is further proved in the (001)-ZFO/PMN-PT film where the film strain state can be in situ controlled with applied electric field. This compressive-strain-enhanced magnetization can be attributed to the strain-mediated electric-field-induced in-plane magnetic anisotropy field enhancement. The above results indicate that strain engineering on magnetic oxide semiconductor ZFO films is promising for novel oxide-electronic devices. [ABSTRACT FROM AUTHOR]

High-resolution 3-Dimensional Reciprocal Space Mapping (3D-RSM) has been performed on mixed-phase BiFeO3 (BFO) epitaxial films on (001)-oriented LaAlO3 substrates. Our results demonstrate that 3D-RSM is an effective way to present a structural overview of the different BFO polymorphs, domain variants, and even the interfacial regions between coexisting triclinic phases. The dislocation-free boundaries between the triclinic phases revealed by these 3D-RSMs are believed to be responsible for the large electromechanical response found in mixed-phase BFO films. This study demonstrates the unique merits of the 3D-RSM technique for the structural characterization of ferroic films with complicated domain structures. [ABSTRACT FROM AUTHOR]

The nucleotide sequence of the glycoprotein (G) gene of rice yellow stunt rhabdovirus (RYSV) was determined. The G gene is 2158 nucleotides long and contains an open reading frame of 2007 nucleotides encoding a protein with a calculated molecular mass of 75,358 Da. Furthermore, the 5′- and 3′-terminal sequences of the G protein mRNA were defined by the RACE method. Non-viral nucleotides appear to be present at the 5′ end of G mRNA. The G protein contains an N-terminal signal peptide of 32 amino acids, C-terminal transmembrane and cytoplasmic domains, ten potential glycosylation sites and four stretches of a–d hydrophobic heptad-repeats. [ABSTRACT FROM AUTHOR]

A large anisotropic remnant magnetization tunability was observed in multiferroic (011)-La2/3Sr1/3MnO3/0.7Pb(Mg2/3Nb1/3)O3-0.3PbTiO3 (LSMO/PMN-0.3PT) epitaxial heterostructures. The remnant magnetization along [100] direction was suppressed by an electric field applied to the substrate while the remnant magnetization along [formula] was enhanced. The tunabilities of the remnant magnetization along the [100] and [formula] directions are about -17.9% and +157% under electric field of +7.27 kV/cm, respectively. This large anisotropic remnant magnetization tunability may find potential applications in the electrically written and magnetically read memories. [ABSTRACT FROM AUTHOR]

Multiferroic (001)-Zn0.4Fe2.6O4/0.7Pb(Mg2/3Nb1/3)O3-0.3PbTiO3 (ZFO/PMN-PT) epitaxial heterostructures have been investigated to demonstrate the electric-field-controlled resistance and magnetization switching. The tunabilitiy of resistance of the ZFO film is about -0.1% under the in-plane strain -0.02% at 296 K and 0.2% for the electric field 1.0 kV/cm at 80 K, respectively, and the tunabilitiy of magnetization is about 1.1% under the in-plane strain -0.11% at 296 K, which is attributed to the controllable strain transferred into the ZFO film from the piezoelectric PMN-PT substrate. A possible microscopic mechanism of the manipulation of resistance and magnetization is the enhancement of hopping amplitude of electrons between mixed-valent Fe2+ and Fe3+ ions under the electric-field-induced in-plane compressive strain. [ABSTRACT FROM AUTHOR]

We report on the magnetic properties of Co40Fe40B20/YMnO3 multiferroic heterostructures in which Co40Fe40B20 shows an in-plane uniaxial magnetic anisotropy with the magnetic easy axis along the ferroelectric polarization direction of YMnO3. The coercive field (Hc) of Co40Fe40B20 shows an interesting non-monotonic change from the easy axis to hard axis with a maximum at a certain angle. It was demonstrated that the magnetic property of Co40Fe40B20 was dominated by the FE domain induced strain and the angular dependence of Hc can be understood by the two phase model. This work is helpful for understanding the coupling between ferromagnetic and ferroelectric materials. [ABSTRACT FROM AUTHOR]

The non-volatile resistance states induced by converse piezoelectric effect are observed in ferromagnetic/ferroelectric epitaxial heterostructures of (011)-La2/3Sr1/3MnO3/0.7Pb(Mg2/3Nb1/3)O3-0.3PbTiO3 (LSMO/PMN0.7PT0.3). Three stable remnant strain states and the corresponding resistance states are achieved by properly reversing the electric field from the depolarized direction in ferroelectric PMN0.7PT0.3 substrate. The non-volatile resistance states of the LSMO film can be manipulated by applied electric-field pulse sequence as a result of the large coupling between the electronic states of LSMO film and the strain transferred from the ferroelectric substrate. The electrically tunable, non-volatile resistance states observed exhibit potential for applications in low-power-consumption electronic devices. [ABSTRACT FROM AUTHOR]