1. Structural and electrical properties of sputter deposited ZnO thin films.
- Author
-
V., Muhammed Shameem P., Mekala, Laxman, Kumar, M. Senthil, Shekhawat, Manoj Singh, Bhardwaj, Sudhir, and Suthar, Bhuvneshwer
- Subjects
ZINC oxide thin films ,ZINC oxide films ,THIN films ,ZINC telluride ,SURFACE roughness ,PARTIAL pressure - Abstract
The growth of zinc oxide thin films having different oxygen content was achieved at ambient temperature by reactive dc magnetron sputtering technique and their structural and electrical properties are studied. The structural studies show that the films are polycrystalline with a preferential orientation of the grains along the c-axis [002], which increases with increase in oxygen partial pressure. The grain size and the surface roughness of the zinc oxide films are found to decrease with increasing oxygen partial pressure. It is observed that the resistivity of the zinc oxide films can be tuned from semiconducting to insulating regime by varying the oxygen content. [ABSTRACT FROM AUTHOR]
- Published
- 2018
- Full Text
- View/download PDF