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This paper reports the response of an N-channel transparent gate recessed channel (TGRC) metal–oxide–semiconductor field-effect transistor (MOSFET) to X-ray radiation in the 0.5-k–10-krad dose range after irradiation. TCAD simulations for the same have been done to estimate the threshold voltage shift in MOSFET with different radiation dosages. Models accounting for electron–hole pair generation and recombination are applied along with the trap/detrap model for an insulator as well as interface charging. An improvement of 1.11 mV/krad in radiation sensitivity has been found in increasing the oxide thickness from 2 to 6 nm. The results suggest that TGRC-MOSFET can be effectively used as an X-ray dosimeter in the sub-30-nm scale. Along with a signal amplification and processing circuit, this device can find an enormous applicability in clinical and space environments. [ABSTRACT FROM AUTHOR]