Search

We report a detailed characterization of the thin film morphology of all-polymer blend devices by applying a combined analysis of physical, chemical, optical, and charge transport properties. This is exemplified by considering a model system comprising poly(3-hexylthiophene) (P3HT) and poly(9,9-dioctylfluorene-co-benzothiadiazole) (F8BT). We show that the interactions between the two conjugated polymer components can be controlled by pre-forming the P3HT into highly ordered nanowire structures prior to blending with F8BT, and by varying the molecular weight of the F8BT. As a result, it is possible to produce films containing highly ordered P3HT with hole mobilities enhanced by three orders of magnitude over the pristine blends. Raman spectroscopy under resonant excitation conditions is used to probe the molecular order of both P3HT and F8BT phases within the blend films and these morphological studies are complemented by measurements of photocurrent generation. The resultant increase in photocurrent is associated with the enhanced charge carrier mobilities. The complementary analytical method demonstrated here is applicable to a wide range of polymer blend systems for all applications where the relationships between morphology and device performance are of interest. [ABSTRACT FROM AUTHOR]

Organic blend thin films consisting of semiconducting poly(3-hexylthiophene) (P3HT) and insulating high-density polyethylene (HDPE) have been fabricated by novel application of a large area wire-bar coating technique in air. The microstructure of P3HT:HDPE blend films reveals a strong structural dependence on initial composition. Preferential segregation of P3HT toward the film surface is observed for all blend compositions, while P3HT (or P3HT-rich) columnar structures enclosed by HDPE (or HDPE-rich) lamellar matrix is distinctive for 50:50 (by weight) blends. The transistors fabricated with P3HT:HDPE blend films show a clear field effect behavior, exhibiting charge carrier mobilities up to 5 × 10-2 cm2/Vs, comparable to the values reported in spin-coated similar blends and of neat P3HT devices. The wire-bar coated blend films and devices are highly repeatable and spatially uniform over large areas (few cm by few cm), demonstrating the suitability of this technique for manufacturing of large area organic electronic devices. [ABSTRACT FROM AUTHOR]

We report detailed analysis of the thin film morphology (molecular packing, molecular conformational order, and vertical phase separation) – performance (charge transport, photocurrent generation, and photovoltaic performance) relationships under nanowire formation and subsequent thermal annealing in polymer:fullerene blends. Nanowires of poly(3-hexylthiophene) (P3HT) are formed by controlled precipitation from solution and blended with [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) to form bulk heterojunction thin films. The formation of nanowires and further thermal annealing result in increased molecular order of the P3HT, where the short-range conformational order is maximised by annealing at 100 °C and decreases when annealed at higher temperatures, but the quality of long-range molecular packing and lamellar packing distance increase with annealing temperature up to 150 °C. The long-range order correlates strongly with an increase in hole mobility, but the reduction in short-range conformational order indicates a slight reduction in planarity of the conjugated backbone in this aggregated polymer morphology. Photoconductive atomic force microscopy reveals enhanced connectivity of the hole transporting nanowire network as a result of thermal annealing. Additionally, we find that the nanowire morphology results in a favourable vertical phase separation, with PCBM enrichment at the electron-extracting surface in the conventional architecture, which is contrary to the non-nanowire case. This effect is further encouraged by thermal annealing, resulting in an enhancement of open-circuit voltage, and represents a morphological advantage over conventional P3HT:PCBM devices. Our study identifies an important interplay between long-range and short-range molecular order in charge generation, transport, extraction, and hence solar cell device performance. [ABSTRACT FROM AUTHOR]

We report on the validation of a method based on Kelvin probe force microscopy (KPFM) able to measure the different phases and the relative work function of polymer blend heterojunctions at the nanoscale. The method does not necessitate complex ultra-high vacuum setup. The quantitative information that can be extracted from the topography and the Kelvin probe measurements is critically analysed. Surface voltage difference can be observed at the nanoscale on poly(3-hexyl-thiophene):[6,6]-phenyl-C61-butyric acid methyl ester (P3HT:PCBM) blends and dependence on the annealing condition and the regio-regularity of P3HT is observed. [ABSTRACT FROM AUTHOR]

Solution-processed films of 1,4,8,11,15,18,22,25-octakis(hexyl) copper phthalocyanine (CuPc6) were utilized as an active semiconducting layer in the fabrication of organic field-effect transistors (OFETs) in the bottom-gate configurations using chemical vapour deposited silicon dioxide (SiO2) as gate dielectrics. The surface treatment of the gate dielectric with a self-assembled monolayer of octadecyltrichlorosilane (OTS) resulted in values of 4×10-2 cm2 V-1 s-1 and 106 for saturation mobility and on/off current ratio, respectively. This improvement was accompanied by a shift in the threshold voltage from 3V for untreated devices to -2V for OTS treated devices. The trap density at the interface between the gate dielectric and semiconductor decreased by about one order of magnitude after the surface treatment. The transistors with the OTS treated gate dielectrics were more stable over a 30-day period in air than untreated ones. [ABSTRACT FROM AUTHOR]