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Coherent light-matter interactions mediated by opto-magnetic phenomena like the inverse Faraday effect (IFE) are expected to provide a non-thermal pathway for ultrafast manipulation of magnetism on timescales as short as the excitation pulse itself. As the IFE scales with the spin-orbit coupling strength of the involved electronic states, photo-exciting the strongly spin-orbit coupled core-level electrons in magnetic materials appears as an appealing method to transiently generate large opto-magnetic moments. Here, we investigate this scenario in a ferrimagnetic GdFeCo alloy by using intense and circularly polarized pulses of extreme ultraviolet radiation. Our results reveal ultrafast and strong helicity-dependent magnetic effects which are in line with the characteristic fingerprints of an IFE, corroborated by ab initio opto-magnetic IFE theory and atomistic spin dynamics simulations. Coherent light-matter interactions mediated by opto-magnetic phenomena like the inverse Faraday effect are expected to provide a non-thermal pathway for ultrafast manipulation of magnetism. The authors use intense and circularly polarized pulses of extreme ultraviolet radiation to induce particularly strong effects in a ferrimagnetic GdFeCo alloy. [ABSTRACT FROM AUTHOR]

It is widely known that antiferromagnets (AFMs) display a high frequency response in the terahertz (THz) range, which opens up the possibility for ultrafast control of their magnetization for next generation data storage and processing applications. However, because the magnetization of the different sublattices cancel, their state is notoriously difficult to read. One way to overcome this is to couple AFMs to ferromagnets—whose state is trivially read via magneto-resistance sensors. Here we present conditions, using theoretical modelling, that it is possible to switch the magnetization of an AFM/FM bilayer using THz frequency pulses with moderate field amplitude and short durations, achievable in experiments. Consistent switching is observed in the phase diagrams for an order of magnitude increase in the interface coupling and a tripling in the thickness of the FM layer. We demonstrate a range of reversal paths that arise due to the combination of precession in the materials and the THz-induced fields. Our analysis demonstrates that the AFM drives the switching and results in a much higher frequency dynamics in the FM due to the exchange coupling at the interface. The switching is shown to be robust over a broad range of temperatures relevant for device applications. [ABSTRACT FROM AUTHOR]

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In this paper, we propose helicity-dependent switching (HDS) of magnetization in Co/Pt for an energy efficient optical receiver. Designing a low-power optical receiver for optical-to-electrical signal conversion has proven to be very challenging. Current day optical receivers use a photodiode that produces a photocurrent in response to input optical signals, and power hungry transimpedance amplifiers are required to amplify the small photocurrents. These limitations can be overcome by using light helicity-induced switching of magnetization which can avoid the requirement of photodiodes and subsequent transimpedance amplification by sensing the change in magnetization with a magnetic tunnel junction (MTJ). Magnetization switching of a thin ferromagnet layer using circularly polarized laser pulses has recently been demonstrated which shows a one-to-one correspondence between light helicity and the magnetization state. We use these phenomena to directly switch the magnetization state of a thin Co/Pt ferromagnet layer at the receiver via circularly polarized laser pulses. The circular polarization is controlled in accordance with digital input data which establishes a one-to-one correspondence between the transmitted data and output magnetization state. The Co/Pt layer is used as the free layer of an MTJ, the resistance of which is modified by the laser pulses. Since the output magnetization state is controlled by the input data, the MTJ resistance is directly converted to a digital output signal. Our device-to-circuit level simulation results indicate that HDS-based optical receiver circuit consumes only 0.124 pJ/bit energy, which is much lower than existing techniques. [ABSTRACT FROM AUTHOR]

Using the time-resolved magneto-optical Kerr effect method, helicity-dependent all-optical magnetization switching (HD-AOS) is observed in ferrimagnetic TbFeCo films. Our results reveal the individual roles of the thermal and nonthermal effects after a single circularly polarized laser pulse. The evolution of this ultrafast switching occurs over different time scales, and a defined magnetization reversal time of 460 fs is shown—the fastest ever observed. Micromagnetic simulations based on a single macro-spin model, taking into account both heating and the inverse Faraday effect, are performed which reproduce HD-AOS demonstrating a linear path for magnetization reversal. [ABSTRACT FROM AUTHOR]

Synthetic ferrimagnets are composite magnetic structures formed from two or more anti-ferromagnetically coupled magnetic sublattices with different magnetic moments. Here, we report on atomistic spin simulations of the laser-induced magnetization dynamics on such synthetic ferrimagnets and demonstrate that the application of ultrashort laser pulses leads to sub-picosecond magnetization dynamics and all-optical switching in a similar manner as in ferrimagnetic alloys. Moreover, we present the essential material properties for successful laser-induced switching, demonstrating the feasibility of using a synthetic ferrimagnet as a high density magnetic storage element without the need of a write field. [ABSTRACT FROM AUTHOR]

Optical interconnect has emerged as the front-runner to replace electrical interconnect especially for off-chip communication. However, a major drawback with optical interconnects is the need for photodetectors and amplifiers at the receiver, implemented usually by direct bandgap semiconductors and analog CMOS circuits, leading to large energy consumption and slow operating time. In this letter, we propose a new optical interconnect architecture that uses a magnetic tunnel junction (MTJ) at the receiver side that is switched by femtosecond laser pulses. The state of the MTJ can be sensed using simple digital CMOS latches, resulting in significant improvement in energy consumption. Moreover, magnetization in the MTJ can be switched on the picoseconds time-scale and our design can operate at a speed of 5 Gb/s for a single link. [ABSTRACT FROM AUTHOR]