14 results on '"Parke, S.A."'
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2. Quest for the ultimate sub-50 nm CMOS transistor structure.
3. Elimination of body effects in SOI CMOS devices.
4. Design for suppression of gate-induced drain leakage in LDD MOSFETs using a quasi-two-dimensional analytical model.
5. Fault-tolerant designs for 256 Mb DRAM.
6. High-speed sensing scheme for CMOS DRAMs.
7. Recessed-channel structure for fabricating ultrathin SOI MOSFET with low series resistance.
8. Bipolar-FET hybrid-mode operation of quarter-micrometer SOI MOSFETs (MESFETs read MOSFETs).
9. A high-performance lateral bipolar transistor fabricated on SIMOX.
10. Design Optimization of a 35nm Independently-Double-Gated Flexfet SOI Transistor.
11. Complementary, High-Performance Lateral Bjts in a Simox C-Bicmos Technology.
12. Deep Sub-Micron, Bipolar-Mos Hybrid Transistors Fabricated on Simox.
13. Recess channel structure for reducing source/drain series resistance in ultra-thin SOI MOSFETs.
14. Optimization of DRAM sense amplifiers for the gigabit era.
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