110 results on '"Pollak, Fred H."'
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2. Contactless electroreflectance, in the range of 20 K<T<300 K, of freestanding wurtzite GaN prepared by hydride-vapor-phase epitaxy.
3. Optical constants of cubic GaN/GaAs(001): Experiment and modeling.
4. Differential surface photovoltage spectroscopy characterization of a 1.3 μm InGaAlAs/InP vertical-cavity surface-emitting laser structure.
5. Micro-Raman investigation of thin lateral epitaxial overgrown GaN/sapphire(0001) films.
6. Optical constants of In[sub 0.53]Ga[sub 0.47]As/InP: Experiment and modeling.
7. Angle-dependent differential-photovoltage spectroscopy for the characterization of a GaAs/GaAlAs based vertical-cavity surface-emitting laser structure.
8. Thermal conductivity of GaN films: Effects of impurities and dislocations.
9. Ion-beam processing effects on the thermal conductivity of n-GaN/sapphire (0001).
10. Temperature-dependent contactless electroreflectance and photoluminescence study of GaAlAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures.
11. High spatial resolution thermal conductivity and Raman spectroscopy investigation of hydride vapor phase epitaxy grown n-GaN/sapphire (0001): Doping dependence.
12. Optical properties of CdTe...S... (0...x...1): Experiment and modeling.
13. Electroreflectance study of the temperature dependence of the E1 transition of Hg0.65Cd0.35Te.
14. Liquid junctions for characterization of electronic materials. III. Modulation spectroscopies of reactive ion etching of Si.
15. Comprehensive investigation of polish-induced surface strain in <100> and <111> GaAs and InP.
16. Optical studies of anodic oxide films on GaAs using a rotating light-pipe reflectometer.
17. Variations in the carrier concentration in elemental and compound semiconductors utilizing electrolyte electroreflectance: A topographical investigation.
18. Variations in composition in binary and ternary semiconductors utilizing electrolyte electroreflectance: A topographical investigation.
19. Characterization of a graded index of refraction separate confinement heterostructure (GRINSCH)...
20. On the origins of the Franz-Keldysh oscillations observed in the electromodulation spectra of...
21. Integer quantum Hall effect in a high electron density A10.2Ga0.8As/In0.2Ga0.8As/GaAs quantum well.
22. Surface photovoltage spectroscopy of an InGaAs/AIGaAs single quantum well laser structure.
23. Determination of defect density in ZnCdMgSe layers grown on InP using chemical etch.
24. Micro-Raman study of diamondlike atomic-scale composite films modified by continuous wave laser annealing.
25. Piezoreflectance and photoreflectance study of GaAs/AlGaAs digital alloy compositional graded structures.
26. Temperature dependence of the photoreflectance of a strained layer (001) In0.21Ga0.79As/GaAs single quantum well.
27. Electroreflectance study of a symmetrically coupled GaAs/Ga0.77Al0.23As double quantum well system.
28. Surface photovoltage spectroscopy and normal-incidence reflectivity characterization of a 1.3 μm InGaAlAs/InP vertical-cavity surface-emitting laser structure.
29. High spatial resolution thermal conductivity of bulk ZnO (0001).
30. Photoreflectance characterization of an AlInAs/GaInAs heterojunction bipolar transistor structure with a chirped superlattice.
31. Polish-induced damage in <100> GaAs: A comparison of transmission electron microscopy and Raman spectroscopy.
32. High Spatial Resolution Thermal Conductivity investigation of SiC Wafers.
33. Surface Photovoltage Spectroscopy of InGaN/GaN/AlGaN Multiple Quantum Well Light Emitting Diodes.
34. Single-Crystal Aluminum Nitride Substrate Preparation from Bulk Crystals.
35. Nondestructive room-temperature characterization of wafer-sized III-V semiconductor device structures using contactless electromodulation and surface photovoltage spectroscopy.
36. Plasma-Induced Effects On The Thermal Conductivity of Hydride Vapor Phase Epitaxy Grown n -GaN/Sapphire (0001).
37. The optical constants of n- and p-doped In0.66Ga0.34As on InP (001) including the Burstein-Moss shift: Experiment and modeling.
38. Doping Dependence of the Thermal Conductivity of Hydride Vapor Phase Epitaxy Grown n -GaN/Sapphire (0001) Using a Scanning Thermal Microscope.
39. The effect of substrate on the pressure coefficients of GaSb-AlSb quantum wells.
40. Nondestructive, Room Temperature Determination of the Nature of the Band-Bending (Carrier Type) in Group III Nitrides Using Contactless Electroreflectance and Surface Photovoltage Spectroscopy.
41. Room-temperature contactless electromodulation investigation of wafer-sized quantum well laser structures.
42. Modeling of optical spectra for characterization of multiquantum well InGaAsP-based lasers.
43. Characterization of semiconductor device structures using contactless electromodulation.
44. Photoreflectance study of GaAs/GaAlAs digital alloy compositionally graded structures.
45. Room-temperature photoreflectance characterization of process-induced strains in GaAs/Ga0.7Al0.3As quantum dots.
46. Characterization of semiconductor device structures by modulation spectroscopy.
47. Growth of wide bandgap II-VI alloys on InP substrates by molecular beam epitaxy.
48. Electromodulation study of a pseudomorphic Ga0.78Al0.22As/In0.21Ga0.79As/GaAs modulation-doped quantum-well structure: two-dimensional electron gas effects.
49. Electron energy relaxation dynamics in GaAs quantum wells grown on Si: cool-hole effect.
50. Electromodulation of semiconductors and semiconductor microstructures utilizing a new contactless technique.
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