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The cyclic GMP-AMP synthase-stimulator of interferon genes (cGAS-STING) pathway is critical in cancer immunity. Autophagy is a highly conserved process that is responsible for the degradation of cytoplasmic material and is involved in both innate and adaptive immunity. Recently, cGAS-STING and autophagy have been shown to be interconnected, which may influence the progression of cancer. Although cGAS-STING and autophagy have been shown to be interrelated in innate immunity, little has been reported about cancer immunity. As cancer immunity is key to treating tumors, it is essential to summarize the relationship and interactions between the two. Based on this, we systematically sorted out the recent findings of cGAS-STING and autophagy in cancer immunity and explored the interactions between cGAS-STING and autophagy, although these interactions have not been extensively studied. Lastly, we provide an outlook on how cGAS-STING and autophagy can be combined, with the hope that our research can help people better understand their potential roles in cancer immunity and bring light to the treatment of cancer. [ABSTRACT FROM AUTHOR]

The cyclic GMP-AMP synthase-stimulator of interferon genes (cGAS-STING) pathway is critical in cancer immunity. Autophagy is a highly conserved process that is responsible for the degradation of cytoplasmic material and is involved in both innate and adaptive immunity. Recently, cGAS-STING and autophagy have been shown to be interconnected, which may influence the progression of cancer. Although cGAS-STING and autophagy have been shown to be interrelated in innate immunity, little has been reported about cancer immunity. As cancer immunity is key to treating tumors, it is essential to summarize the relationship and interactions between the two. Based on this, we systematically sorted out the recent findings of cGAS-STING and autophagy in cancer immunity and explored the interactions between cGAS-STING and autophagy, although these interactions have not been extensively studied. Lastly, we provide an outlook on how cGAS-STING and autophagy can be combined, with the hope that our research can help people better understand their potential roles in cancer immunity and bring light to the treatment of cancer. [ABSTRACT FROM AUTHOR]

The concept of a distortionless through silicon via (TSV), which uses a multiwalled carbon nanotube (MWCNT) as conductor material, is proposed. The design requirements and the design method for the distortionless TSV are presented. In the high-frequency band, the propagation constant of the traditional Cu-TSV will deviate from the linear function of the frequency because of the skin effect, inducing the transmission signal distortion. MWCNT bundles have properties where the resistance and the inductance are almost constant with the frequency, which can meet the design requirements for a distortionless TSV. Compared with the identical dimensions Cu-TSV, the TSV designed by using the proposed method with MWCNT bundles as the conductor material has the preferable linearity of the propagation constant with the frequency in the high-frequency band, so that it can reduce the distortion of the transmission signal. [ABSTRACT FROM AUTHOR]

Based on the complex effective conductivity method, a closed-form expression for the internal impedance of mixed carbon nanotube (CNT) bundles, in which the number of CNTs for a given diameter follows a Gaussian distribution, is proposed in this paper. It can appropriately capture the skin effect as well as the temperature effect of mixed CNT bundles. The results of the closed-form expression and the numerical calculation are compared with various mean diameters, standard deviations, and temperatures. It is shown that the proposed model has very high accuracy in the whole frequency range considered, with maximum errors of 1% and 2.3% for the resistance and the internal inductance, respectively. Moreover, by using the proposed model, the high-frequency electrical characteristics of mixed CNT bundles are deeply analyzed to provide helpful design guidelines for their application in future high-performance three-dimensional integrated circuits. [ABSTRACT FROM AUTHOR]