Author: "Rouchy, U." / Database: Complementary Index - Searchworks@Jio Institute Digital Library Search Results

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Start Over Author "Rouchy, U." Database Complementary Index

Author: Maher, H., Delmouly, V., Rouchy, U., Renvoise, M., Frijlink, P., Smith, D., Zaknoune, M., Ducatteau, D., Avramovic, V., Scavennec, A., Godin, J., Riet, M., Maneux, C., and Ardouin, B.
Published: 2011

Author: Maher, H., Baudet, P., El Makoudi, I., Perichaud, M.-G., Bellaiche, J., Renvoise, M., Rouchy, U., and Frijlink, P.
Published: 2006
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Author: Zaknoune, M., Mairiaux, E., Roelens, Y., Waldhoff, N., Rouchy, U., Frijlink, P., Rocchi, M., and Maher, H.
Subjects: HETEROJUNCTION bipolar transistors, INDIUM phosphide, GALLIUM compounds, FIELD emission, ELECTRIC breakdown, MICROFABRICATION, ELECTRIC capacity
Abstract: Self-aligned \0.55\times \3.5\ \mu \m^2 emitter InP/GaAsSb/InP double heterojunction bipolar transistors demonstrating an ft of 310 GHz and an f \max of 480 GHz are reported. Common–emitter current gain of 24, together with a breakdown voltage of 4.6 V, is measured. The devices were fabricated with a triple-mesa process and easily fabricated with a new base isolation \mu-airbridge design which, moreover, significantly reduced the base–collector capacitance CBC. [ABSTRACT FROM AUTHOR]
Published: 2012
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