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Dengue virus type 2 (DENV-2) is an arthropod-borne deadly RNA human pathogen transmitted through the mosquito Aedes. The DENV-2 roots viral infection by facilitating entry with its envelope glycoprotein to the receptor protein Dendritic-cell-specific ICAM3-grabbing non-integrin (DC-SIGN) through membrane fusion. Here, an organizational path is reported for inhibiting the transition due to fusion activation and by blocking the residues of the DC-SIGN–E-Glyco protein complex through citrus limonoids with its antiviral effect. Based on lower binding affinity obtained with E-glycoprotein, and based on ADMET and drug-likeness study, limonin was selected as having effective interaction with DC-SIGN–E-glycoprotein complex in comparison to other citrus limonoids. The FTIR spectra performed with the limonin–E-glycoprotein sample provide evidence of hydrogen bond formation that indicates the formation of a strong limonin–E-glycoprotein conjugate. Further, the strong physical interaction between DC-SIGN and small limonin molecules in comparison to that of E-glyco with DC-SIGN assures the development of immunity against DENV-2. [ABSTRACT FROM AUTHOR]

The remarkable development and continual proliferation of research in the nanotechnology field have led to improvement in the efficiency of elementary devices. To improve their performance, the parameters of such devices can be scaled down while optimizing their characteristics. However, this simultaneously results in degraded switching characteristics and the appearance of short-channel effects. Multigate-based fin-shaped field-effect transistors (FinFETs) represent a new option to address all these problems. However, thermal failure of FinFET devices under nominal operating conditions is an important issue in the design and implementation of high-speed semiconductor devices. It is also seen that bulk FinFETs exhibit better thermal performance compared with silicon-on-insulator FinFETs. In the work presented herein, various FinFET characteristics including the subthreshold swing, drain-induced barrier lowering, threshold voltage, and drain current were investigated as functions of temperature. The (effective) channel length is larger than the physical gate length (in off-state) due to the undoped underlap regions. This paper also discusses the effects of drain, source, and gate overlap. [ABSTRACT FROM AUTHOR]