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Although the diamond/Al composite is a good heat sink material due to its high thermal conductivity and low cost, its surface cannot be wetted directly for microelectronic packaging. Using modified electroless plating procedures and recipes, a glossy, continuous, and uniform Ni-P film was successfully fabricated on the diamond/Al composite surface for the first time with a bonding strength of 15.1 MPa. This Ni-P coating layer is solderable for both lead-free SAC305 and Sn63Pb37 alloys on Cu dummy chips. A continuous intermetallic compound (IMC) layer was formed at the interface without any crack or void defects, and the shear strength of both solder joints was in the range of 39.9-41.2 MPa. During thermal storage tests, the growth of IMC was slow at 125 and 150 °C, but it elevated sharply at 175 °C. According to growth kinetics analyses, a Ni element can hinder IMC growth. The diffusion activation energy (Q) of (Cu,Ni)6Sn5 was calculated as 62.6 kJ/mol in SAC305 and 97.7 kJ/mol in Sn63Pb37 solder joints. Both microstructures and mechanical properties of the solder joint using the Ni-P coated diamond/Al composite can satisfy the requirement of microelectronic industrial applications. [ABSTRACT FROM AUTHOR]