1. Nanostructuring in Ge by self-ion implantation.
- Author
-
Romano, L., Impellizzeri, G., Tomasello, M. V., Giannazzo, F., Spinella, C., and Grimaldi, M. G.
- Subjects
ION bombardment ,SCANNING electron microscopy ,COLLISIONS (Nuclear physics) ,ION implantation ,NANOSCIENCE ,NANOSTRUCTURED materials - Abstract
We report here a detailed study about the formation and self-organization of nanoscale structures during ion beam implantation at room temperature of 300 keV Ge
+ in Ge as a function of the ion fluence in the range between 1×1014 to 4×1016 cm-2 . “Microexplosions” characterize the morphology of the swelled material; a random cellular structure consisting of cells surrounded by amorphous Ge ripples has been observed and studied in details by combining atomic force microscopy, scanning electron microscopy, and transmission electron microscopy. [ABSTRACT FROM AUTHOR]- Published
- 2010
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