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Flue gas desulfurization facilities produce flue gas desulfurization ash (FGDA), which has ecological and economic benefits. In this article, we explored the possibility and impact of using FGDA as the sole reinforcing filler to mechanically improve epoxidized natural rubber (ENR). The influence on the properties of the composites was examined. FGDA exhibits good interfacial interaction and compatibility with ENR, which improves the mechanical properties of ENR. When 15 phr FGDA was added, the tensile strength of the composites increased by approximately 41.4% compared with that of pure ENR. This work demonstrates the possibility of using FGDA as an effective and sole reinforcing material to enhance the properties of rubber materials. Highlights: FGDA improves the mechanical properties of ENR as a sole reinforcing filler.FGDA reacts with ENR during vulcanization, enhancing compatibility.Adding 15 phr FGDA to ENR increases the tensile strength by 41.4%. [ABSTRACT FROM AUTHOR]

A spin Hall effect (SHE) enables the electrical generation and detection of spin currents for promising applications in spintronics, but heavy metals with low spin Hall angle θSH limit the development of SHE devices. In this work, we have introduced dielectric oxide material SrTiO3 into Pt by magnetron sputtering and measured the θSH on the NiCo/Pt1–x(STO)x heterostructure through spin-torque ferromagnetic resonance. Our results demonstrate that the maximum spin Hall angle in Pt0.98(STO)0.02 is 0.121 ± 0.003, which is approximately twice that of pure Pt (0.064 ± 0.003). Moreover, theoretical analysis has revealed that the spin Hall angle arises from a complementary interplay between intrinsic and extrinsic mechanisms, namely, the strong spin–orbit coupling in Pt for the intrinsic mechanism and side-jump scattering caused by scalar potential and lattice expansion at dielectric impurities for the extrinsic mechanism. This interplay significantly contributes to enhancing the spin Hall angle. This work demonstrates an effective strategy for fabricating high-performance spin Hall materials with low resistivity, large spin Hall angle, and excellent compatibility with semiconductor processes in low-power spin-torque devices. [ABSTRACT FROM AUTHOR]