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Silicon molecular beam epitaxy on thermally cleaned GaP(111) substrates has been prepared at 450 °C with the growth rate of 0.2 Å/s. The P segregation on the surface of Si epilayer beyond the thickness of 1500 Å has been observed. The surface of epilayer has the same (1×1) periodicity as that of the substrate when the thickness of the epilayer is less than 500 Å. Above 500 Å, the surface shows a (3×3) reconstruction. It is suggested that both (1×1) and (3×3) geometries are P-stabilized surface structures. [ABSTRACT FROM AUTHOR]

Examines the boron doping induced surface roughness in silicon molecular beam epitaxy. Change in the growth surface; Evolution of the roughening in the boron doping concentration; Attribution of surface roughening effect to boron segregation behavior.