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Recently, nanozyme-based sensing platforms have attracted widespread attention due to their excellent performance in practical applications. In this paper, phosphorus-doped porous materials were synthesized by a one-step method and metal-doped with different metal salts. The results show that the iron-containing porous nitrogen-phosphorus material (FeNPC) has the best peroxidase activity. FeNPC catalyzes hydrogen peroxide to generate hydroxyl radical (•OH) which oxidizes colorless 3,3',5,5'-tetramethylbenzidine (TMB) to blue oxTMB. When the above system encounters ferulic acid, the blue product will be inhibited, and the color of the reaction solution will change, so ferulic acid can be detected by the colorimetric method. Ferulic acid is an antioxidant used in humans as an antibacterial and antiviral drug. The detection limit of this colorimetric sensor is as low as 1.3 nM. Compared with other detection methods, the colorimetric method is simple, fast, and cheap and has a good development prospect. [ABSTRACT FROM AUTHOR]

Nanozymes have both the high catalytic activity of natural enzymes and the stability and economy of mimetic enzymes. Research on nanozymes is rapidly emerging, and the continuous development of highly catalytic active nanozymes is of far-reaching significance. This work reports heteroatomic nitrogen (N) and phosphorus (P) double-doped mesoporous carbon structures and metallic Fe coordination generated sponge-like nanozymes (Fe/NPCs) with good peroxidase activity. On this basis, we constructed a highly sensitive colorimetric sensor with cysteine and phenol as simulated analytes using Fe/NPCs nanozymes, and the response limits reached 53.6 nM and 5.4 nM, respectively. Besides, the method has high accuracy in the detection of cysteine and phenol at low concentrations in serum and tap water, which lays a foundation for application in the fields of environmental protection and biosensors. [ABSTRACT FROM AUTHOR]

A dynamic current model for the double gate negative capacitance field-effect transistor (NCFET) of the metal–ferroelectric–insulator–semiconductor (MFIS) structure is presented in this work. With a damping parameter ρ in the Landau–Khalatnikov (LK) theory for general ferroelectric (FE) materials, the gate control equation of NCFET is intrinsically dynamic which is solved directly as a basis of NCFET modeling. With the time-dependent charge densities at the source and drain sides, a dynamic current model is formulated analytically for the first time, considering the dynamic terms in a self-consistent way. The model has been verified with numerical TCAD simulations. It accurately reproduces the static negative capacitance (NC) effect in enhancing the driving current, as well as the dynamic NC effect, in the conduction delay and hysteresis for a wide range of NCFET parameters. The dynamic model after implementations is successfully applied to circuit simulations such as ring oscillators without convergence issues. [ABSTRACT FROM AUTHOR]