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Examines the epitaxial growth of Sr[sub x]Ba[sub 1-x]Nb[sub 2]O[sub 6] (SBN) films on MgO substrates by single source plasma enhanced chemical vapor deposition (PE-CVD) process. Preparation of SBN thin films; Compatibility of oxide thin films and CVD with high oxygen partial pressure; Importance of device quality substrate.

This letter presents a study of optical phonon modes of single-crystalline orthorhombic ZnSiN[sub 2] semiconductor epitaxially deposited on r-sapphire. An epitaxial relationship for ZnSiN[sub 2] film was found from x-ray diffraction to be (0k0)[sub ZnSiN[sub 2]]|(10 1¯2)[sub Al[sub 2]O[sub 3]] and [100][sub ZnSiN[sub 2]]|(12¯10)[sub Al[sub 2]O[sub 3]]. Six B[sub 1] optical modes were revealed in 400-1000 cm-1 range in s-polarized infrared reflectance spectra. This is consistent with the analysis of the phonon symmetry and selection rules presented. The frequencies of the transversal and longitudinal components, phonon damping, and oscillator strengths of the B[sub 1] phonons as well as high frequency dielectric constant ε[sub ∞xx] of the orthorhombic ZnSiN[sub 2] were determined. © 2000 American Institute of Physics. [ABSTRACT FROM AUTHOR]