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1/f noise in NPN transistors as a function of total ionising dose and dose rate are investigated in this article. The results show that the base current noise increase with accumulated total dose both at dose rate of 0·1 and 10 rad(Si) s−1, and the transistors exhibit more degradation at low-dose rate (0·1 rad(Si) s−1). The radiation-induced oxide charges near the SiO2-Si interface and interface traps at the interface can contribute to the fluctuation of the base current noise. The surface base current noise model combined with the space charge model can explain the noise performance degradation and the enhanced low-dose rate sensitivity of the NPN transistors. [ABSTRACT FROM AUTHOR]

1/f noise in NPN transistors as a function of total ionising dose and dose rate are investigated in this article. The results show that the base current noise increase with accumulated total dose both at dose rate of 0·1 and 10 rad(Si) s−1, and the transistors exhibit more degradation at low-dose rate (0·1 rad(Si) s−1). The radiation-induced oxide charges near the SiO2-Si interface and interface traps at the interface can contribute to the fluctuation of the base current noise. The surface base current noise model combined with the space charge model can explain the noise performance degradation and the enhanced low-dose rate sensitivity of the NPN transistors. [ABSTRACT FROM AUTHOR]