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GaAsSb semiconductor material, a ternary alloy, has long been recognized as a crucial semiconductor in the near infrared range due to its ability to finely adjust the wavelength through controlling the Sb component. In this work, we report on the pattern of orientation variation in self-catalyzed grown GaAsSb nanowires (NWs). Utilizing solid-source molecular-beam epitaxy (MBE), self-catalyzed GaAs and GaAsSb nanowires (NWs) were grown on Si (111) substrates. The influence of various Sb components on the growth direction of the nanowires in the ternary GaAsSb alloy was examined using scanning electron microscopy (SEM). The inclusion of Sb components was discovered to alter the growth direction of the nanowires, transitioning them from a vertical and inclined orientation to a configuration that encompassed vertical, inclined, and parallel orientations with respect to the Si (111) substrate. As the Sb component in GaAsSb increased, there was an increased likelihood of the nanowires growing parallel to the surface of the Si (111) substrate. A combination of X-ray diffraction (XRD) and Raman spectroscopy validated the presence of Sb components and indicated a high crystalline quality. Additionally, XRD confirmed that the Sb components aligned with the intended structure. These findings establish a solid material foundation for the development of high-performance GaAsSb-based devices. [ABSTRACT FROM AUTHOR]

We report the first study on a GaAs/GaAsSb core–shell (CS)-configured nanowire (NW)-based separate absorption, charge control, and multiplication region avalanche photodiode (APD) operating in the near-infrared (NIR) region. Heterostructure NWs consisted of GaAs and tunable band gap GaAs1–xSbx serving as the multiplication and absorption layers, respectively. A doping compensation of absorber material to boost material absorption, segment-wise annealing to suppress trap-assisted tunneling, and an intrinsic i-type and n-type combination of the hybrid axial core to suppress axial electric field are successfully adopted in this work to realize a room-temperature (RT) avalanche photodetection extending up to 1.3 μm. In an APD device operating at RT with a unity-gain responsivity of 0.2–0.25 A/W at ∼5 V, the peak gain of 160 @ 1064 nm and 18 V reverse bias, gain >50 @ 1.3 μm, are demonstrated. Thus, this work provides a foundation and prospects for exploiting greater freedom in NW photodiode design using hybrid axial and CS heterostructures. [ABSTRACT FROM AUTHOR]

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A self‐catalytic monomer of phthalonitrile, 2‐amino‐4,6‐bis[3‐(3,4‐dicyano‐phenoxy)phenoxy] pyrimidine (ACPP), was synthesized by a one‐pot method with resorcinol, 2‐amino‐4,6‐dichloropyrimidine, and 4‐nitrophthalonitrile. The chemical structure of the ACPP monomer was characterized by Fourier transform Infrared spectroscopy (FTIR) and nuclear magnetic resonance spectroscopy. The curing behavior of ACPP monomer was studied by differential scanning calorimetric, which indicated that the ACPP monomer had a low melting point (84 °C) and revealed an autocatalytic reaction and tremendously wide processing window (193 °C). Wide‐angle X‐ray diffraction (WAXD) and FTIR analyses were employed to explore the microstructure of the ACPP polymers. The properties of the three polymers with different curing procedures were investigated, which implied that the ACPP polymers exhibited excellent thermal stability, high modulus, superior glass‐transition temperature (Tg > 400 °C), and low water absorption with the increase in curing extent. © 2019 Wiley Periodicals, Inc. J. Polym. Sci., Part A: Polym. Chem. 2019, 57, 2287–2294 [ABSTRACT FROM AUTHOR]

Abstract: A catalyst‐free self‐catalyzed [3+2] cycloaddition reaction of isatin‐derived α‐(trifluoromethyl)imines with vinylpyridines is reported. The reaction offers a straightforward and atom‐economical procedure for the preparation of a series of 5′‐trifluoromethyl‐spiro[pyrrolidin‐3,2′‐oxindoles] in excellent yields and diastereoselectivities. The reaction mechanism has been investigated by control experiments, DFT calculation of pKa values and the kinetic profiles, revealing that this reaction featured the mutual activation between isatin‐derived α‐(trifluoromethyl)imines and vinylpyridine to generate the reactive species. [ABSTRACT FROM AUTHOR]

We report the first self-catalyzed growth of high-quality GaSb nanowires on InAs stems using metal-organic chemical vapor deposition (MOCVD) on Si (111) substrates. To achieve the growth of vertical InAs/GaSb heterostructure nanowires, the two-step flow rates of the trimethylgallium (TMGa) and trimethylantimony (TMSb) are used. We first use relatively low TMGa and TMSb flow rates to preserve the Ga droplets on the thin InAs stems. Then, the flow rates of TMGa and TMSb are increased to enhance the axial growth rate. Because of the slower radial growth rate of GaSb at higher growth temperature, GaSb nanowires grown at 500 °C exhibit larger diameters than those grown at 520 °C. However, with respect to the axial growth, due to the Gibbs-Thomson effect and the reduction in the droplet supersaturation with increasing growth temperature, GaSb nanowires grown at 500 °C are longer than those grown at 520 °C. Detailed transmission electron microscopy (TEM) analyses reveal that the GaSb nanowires have a perfect zinc-blende (ZB) crystal structure. The growth method presented here may be suitable for other antimonide nanowire growth, and the axial InAs/GaSb heterostructure nanowires may have strong potential for use in the fabrication of novel nanowire-based devices and in the study of fundamental quantum physics. [ABSTRACT FROM AUTHOR]

We report on the self-catalyzed growth of InAs nanowires on InP substrate by metal-organic chemical vapor deposition. At a moderate V/III ratio, tapered nanowires are obtained, suggesting a strong surface diffusion effect. Dense twin faults are observed perpendicular to the nanowire growth direction due to the fluctuation of In atoms in the droplet originating from the surface diffusion effect. At a lower V/III ratio, the nanowires exhibit kinking, which is associated with a high adhesion due to a large sticking coefficient of TMIn. The twin faults are dramatically suppressed and even completely eliminated in the NW branch after kinking, which is attributed to a stable In supply with a negligible diffusion effect. This work provides a method for the fabrication of defect-free InAs nanowires. [ABSTRACT FROM AUTHOR]

The effect of Sb addition on the morphology of self-catalyzed InAsSb nanowires (NWs) has been systematically investigated. InAs NWs were grown by molecular beam epitaxy with and without antimony (Sb) flux. It is demonstrated that trace amounts of Sb flux are capable of tuning the geometry of NWs, i.e., enhancing lateral growth and suppressing axial growth. We attribute this behavior to the surfactant effect of Sb which results in modifications to the kinetic and thermodynamic processes. A thermodynamic mechanism that accounts for Sb segregation in InAsSb NWs is also elucidated. This study opens a new route towards precisely controlled NW geometries by means of Sb addition. [Figure not available: see fulltext.] [ABSTRACT FROM AUTHOR]

Phthalonitrile resins with many striking properties have drawn much attention as potential candidates for use in composite matrices, adhesives, films, and electrical conductors for the last 30 years. However, it is common shortcomings for phthalonitrile monomers to have high-temperature melting point and need extreme conditions to develop binary phthalonitrile/additives composition. Here, three kinds of self-catalyzed phthalonitrile compounds with low melting point were synthesized, whose structures were characterized by Fourier transform infrared (FTIR) spectroscopy and nuclear magnetic resonance. The different cure behaviors, owing to the different positions of catalyzed group on benzene ring, were investigated by differential scanning calorimetry, and cure kinetics parameters were also calculated. The results showed that the meta and para position monomers possessed better reactivity. Melt-processability study by a rheometer indicated that the ortho one owned the largest processing window. Furthermore, the FTIR spectra demonstrated that the cured monomers contained the same structure with a conventional binary phthalonitrile system. All the cured monomers had excellent thermal stability according to thermogravimetric analysis. Mechanical property was determined by dynamic mechanical analysis, and the results showed that the glass transition temperature (represented by the peak temperature of tanδ) was high up to 550°C for all the three cured monomers. Consequently, these autocatalytic phthalonitrile monomers may be good candidates as matrix for high-performance polymeric materials. Copyright © 2011 John Wiley & Sons, Ltd. [ABSTRACT FROM AUTHOR]

The nucleation and evolution of InN nanowires in a self-catalyzed growth process have been investigated to probe the microscopic growth mechanism of the self-catalysis and a model is proposed for high pressure growth window at ~760 Torr. In the initial stage of the growth, amorphous InN x microparticles of cone shape in liquid phase form with assistance of an InN x wetting layer on the substrate. InN crystallites form inside the cone and serve as the seeds for one-dimensional growth along the favorable [0001] orientation, resulting in single-crystalline InN nanowire bundles protruding out from the cones. An amorphous InN x sheath around the faucet tip serves as the interface between growing InN nanowires and the incoming vapors of indium and nitrogen and supports continuous growth of InN nanowires in a similar way to the oxide sheath in the oxide-assisted growth of other semiconductor nanowires. Other InN 1D nanostructures, such as belts and tubes, can be obtained by varying the InN crystallites nucleation and initiation process. [ABSTRACT FROM AUTHOR]

ZnO was grown on sapphire substrate by metal–organic chemical vapor deposition using the diethylzinc (DEZn) and oxygen (O2) as source chemicals at 500 °C. Influences of the chamber pressure and O2/DEZn ratio on the ZnO structural properties were discussed. It was found that the chamber pressure has significant effects on the morphology of ZnO and could result in various structures of ZnO including pyramid-like, worm-like, and columnar grain. When the chamber pressure was kept at 10 Torr, the lowest full width at half-maximum of ZnO (002) of 175 arc second can be obtained. On the other hand, by lowering the DEZn flow rate, the crystal quality of ZnO can be improved. Under high DEZn flow rate, the ZnO nanowall-network structures were found to grow vertically on the sapphire substrate without using any metal catalysts. It suggests that higher DEZn flow rate promotes three-dimensional growth mode resulting in increased surface roughness. Therefore, some tip on the ZnO surface could act as nucleation site. In this work, the growth process of our ZnO nanowall networks is said to follow the self-catalyzed growth mechanism under high-DEZn flow rate. [ABSTRACT FROM AUTHOR]

Controlled growth of heterostructured nanowires and mechanisms of their formation have been actively studied during the last decades due to perspectives of their implementation. Here, we report on the self-catalyzed growth of axially heterostructured GaPN/GaP nanowires on Si(111) by plasma-assisted molecular beam epitaxy. Nanowire composition and structural properties were examined by means of Raman microspectroscopy and transmission electron microscopy. To study the optical properties of the synthesized nanoheterostructures, the nanowire array was embedded into the silicone rubber membrane and further released from the growth substrate. The reported approach allows us to study the nanowire optical properties avoiding the response from the parasitically grown island layer. Photoluminescence and Raman studies reveal different nitrogen content in nanowires and parasitic island layer. The effect is discussed in terms of the difference in vapor solid and vapor liquid solid growth mechanisms. Photoluminescence studies at low temperature (5K) demonstrate the transition to the quasi-direct gap in the nanowires typical for diluted nitrides with low N-content. The bright room temperature photoluminescent response demonstrates the potential application of nanowire/polymer matrix in flexible optoelectronic devices. [ABSTRACT FROM AUTHOR]