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This study utilizes density functional theory (DFT) with the Tran–Blaha modified Becke–Johnson (TB-mBJ) exchange potential in the WIEN2k framework to comprehensively investigate the structural, electronic, elastic, and optical properties of Rb2TlIrF6 and Rb2TlRhF6 double perovskite compounds. Structural stability assessments affirm that both materials maintain their integrity under standard conditions, demonstrating robust frameworks. The calculated elastic constants reveal mechanical stability, elasticity, and directional anisotropy, emphasizing their resilience and adaptability in varied environments. Electronic band structure calculations categorize Rb2TlIrF6 and Rb2TlRhF6 as direct bandgap semiconductors, with respective bandgaps of 2.61 eV and 1.94 eV at the L–L symmetry points, underscoring their potential in optoelectronic applications. The optical properties were analyzed through key parameters: refractive index n(ω), optical conductivity σ(ω), reflectivity R(ω), absorption coefficient α(ω), and extinction coefficient k(ω). Additionally, the real and imaginary parts of the dielectric function ∊1(ω) and ∊2(ω) were evaluated, indicating effective light interaction and absorption properties in the visible to UV range. These findings suggest that Rb2TlIrF6 and Rb2TlRhF6 exhibit advantageous optoelectronic characteristics suitable for semiconductor and next-generation electronic devices.

Investigating novel compounds has become necessary due to the need for sophisticated materials in optoelectronic devices and spintronics. Because of their unique properties, magnesium-based spinels MgSm2X4 (X = S and Se) are very promising for these applications. We used the spin-polarized PBEsol for structural properties and the PBEsol functional for mechanical behavior, both using the WIEN2k code. Both compounds' stability in the magnetic and non-magnetic phases was validated by the Birch-Murnaghan equation of state, and their stability in the cubic phase was verified by the Born stability criterion. Their ductile character was shown by the computation of Pugh's ratio and Poisson ratio. Both MgSm2S4 and MgSm2Se4 display metallic behavior in the spin-up channel and semiconducting behavior in the spin-down channel, indicating a half-metallic nature, according to TB-mBJ potential calculations. With total magnetic moments of 20 μB, both materials showed ferromagnetic properties. Samarium ions contributed 5.27 μB for MgSm2S4 and 5.34 μB for MgSm2Se4. Furthermore, we computed optical parameters in the energy range of 0 to 15 eV, such as absorption, extinction coefficient, reflectivity, dielectric function, and refractive index. Our results demonstrate the potential of MgSm2X4 spinels for future technological developments by revealing their prospective optoelectronic and spintronic applications.

In the quest for advanced materials with diverse applications in optoelectronics and energy storage, we delve into the fascinating world of halide perovskites, focusing on SiAuF3 and SiCuF3. Employing density functional theory (DFT) as our guiding light, we conduct a comprehensive comparative study of these two compounds, unearthing their unique structural, electronic, elastic, and optical attributes. Structurally, SiAuF3 and SiCuF3 reveal their cubic nature, with SiCuF3 demonstrating superior stability and a higher bulk modulus. Electronic investigations shed light on their metallic behavior, with Fermi energy levels marking the boundary between valence and conduction bands. The band structures and density of states provide deeper insights into the contributions of electronic states in both compounds. Elastic properties unveil the mechanical stability of these materials, with SiCuF3 exhibiting increased anisotropy compared to SiAuF3. Our analysis of optical properties unravels distinct characteristics. SiCuF3 boasts a higher refractive index at lower energies, indicating enhanced transparency in specific ranges, while SiAuF3 exhibits heightened reflectivity in select energy intervals. Further, both compounds exhibit remarkable absorption coefficients, showcasing their ability to absorb light at defined energy thresholds. The energy loss function (ELF) analysis uncovers differential absorption behavior, with SiAuF3 absorbing maximum energy at 6.9 eV and SiCuF3 at 7.2 eV. Our study not only enriches the fundamental understanding of SiAuF3 and SiCuF3 but also illuminates their potential in optoelectronic applications. These findings open doors to innovative technologies harnessing the distinctive qualities of these halide perovskite materials. As researchers seek materials that push the boundaries of optoelectronics and energy storage, SiAuF3 and SiCuF3 stand out as promising candidates, ready to shape the future of these fields.