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Abstract Quantum key distribution (QKD) enables the transmission of information that is secure against general attacks by eavesdroppers. The use of on-demand quantum light sources in QKD protocols is expected to help improve security and maximum tolerable loss. Semiconductor quantum dots (QDs) are a promising building block for quantum communication applications because of the deterministic emission of single photons with high brightness and low multiphoton contribution. Here we report on the first intercity QKD experiment using a bright deterministic single photon source. A BB84 protocol based on polarisation encoding is realised using the high-rate single photons in the telecommunication C-band emitted from a semiconductor QD embedded in a circular Bragg grating structure. Utilising the 79 km long link with 25.49 dB loss (equivalent to 130 km for the direct-connected optical fibre) between the German cities of Hannover and Braunschweig, a record-high secret key bits per pulse of 4.8 × 10−5 with an average quantum bit error ratio of ~ 0.65% are demonstrated. An asymptotic maximum tolerable loss of 28.11 dB is found, corresponding to a length of 144 km of standard telecommunication fibre. Deterministic semiconductor sources therefore challenge state-of-the-art QKD protocols and have the potential to excel in measurement device independent protocols and quantum repeater applications.

Abstract A key challenge in quantum photonics today is the efficient and on-demand generation of high-quality single photons and entangled photon pairs. In this regard, one of the most promising types of emitters are semiconductor quantum dots, fluorescent nanostructures also described as artificial atoms. The main technological challenge in upscaling to an industrial level is the typically random spatial and spectral distribution in their growth. Furthermore, depending on the intended application, different requirements are imposed on a quantum dot, which are reflected in its spectral properties. Given that an in-depth suitability analysis is lengthy and costly, it is common practice to pre-select promising candidate quantum dots using their emission spectrum. Currently, this is done by hand. Therefore, to automate and expedite this process, in this paper, we propose a data-driven machine-learning-based method of evaluating the applicability of a semiconductor quantum dot as single photon source. For this, first, a minimally redundant, but maximally relevant feature representation for quantum dot emission spectra is derived by combining conventional spectral analysis with an autoencoding convolutional neural network. The obtained feature vector is subsequently used as input to a neural network regression model, which is specifically designed to not only return a rating score, gauging the technical suitability of a quantum dot, but also a measure of confidence for its evaluation. For training and testing, a large dataset of self-assembled InAs/GaAs semiconductor quantum dot emission spectra is used, partially labelled by a team of experts in the field. Overall, highly convincing results are achieved, as quantum dots are reliably evaluated correctly. Note, that the presented methodology can account for different spectral requirements and is applicable regardless of the underlying photonic structure, fabrication method and material composition. We therefore consider it the first step towards a fully integrated evaluation framework for quantum dots, proving the use of machine learning beneficial in the advancement of future quantum technologies.

Abstract Atomically thin layered van der Waals heterostructures feature exotic and emergent optoelectronic properties. With growing interest in these novel quantum materials, the microscopic understanding of fundamental interfacial coupling mechanisms is of capital importance. Here, using multidimensional photoemission spectroscopy, we provide a layer- and momentum-resolved view on ultrafast interlayer electron and energy transfer in a monolayer-WSe2/graphene heterostructure. Depending on the nature of the optically prepared state, we find the different dominating transfer mechanisms: while electron injection from graphene to WSe2 is observed after photoexcitation of quasi-free hot carriers in the graphene layer, we establish an interfacial Meitner-Auger energy transfer process following the excitation of excitons in WSe2. By analysing the time-energy-momentum distributions of excited-state carriers with a rate-equation model, we distinguish these two types of interfacial dynamics and identify the ultrafast conversion of excitons in WSe2 to valence band transitions in graphene. Microscopic calculations find interfacial dipole-monopole coupling underlying the Meitner-Auger energy transfer to dominate over conventional Förster- and Dexter-type interactions, in agreement with the experimental observations. The energy transfer mechanism revealed here might enable new hot-carrier-based device concepts with van der Waals heterostructures.

Abstract Quantum cryptography harnesses quantum light, in particular single photons, to provide security guarantees that cannot be reached by classical means. For each cryptographic task, the security feature of interest is directly related to the photons’ non-classical properties. Quantum dot-based single-photon sources are remarkable candidates, as they can in principle emit deterministically, with high brightness and low multiphoton contribution. Here, we show that these sources provide additional security benefits, thanks to the tunability of coherence in the emitted photon-number states. We identify the optimal optical pumping scheme for the main quantum-cryptographic primitives, and benchmark their performance with respect to Poisson-distributed sources such as attenuated laser states and down-conversion sources. In particular, we elaborate on the advantage of using phonon-assisted and two-photon excitation rather than resonant excitation for quantum key distribution and other primitives. The presented results will guide future developments in solid-state and quantum information science for photon sources that are tailored to quantum communication tasks.

Photonic integrated circuits (PICs) based on the silicon-on-insulator platform currently allow high-density integration of optical and electro-optical components on the same chip. This high complexity is also transferred to quantum PICs, where non-linear processes are used for the generation of quantum light on the silicon chip. However, these intrinsically probabilistic light emission processes pose challenges to the ultimately achievable scalability. Here, an interesting solution would be employing on-demand sources of quantum light based on III–V platforms, which are nonetheless very complex to grow directly on silicon. In this paper, we show the integration of InAs quantum dots (QDs) on silicon via the growth on a wafer-bonded GaAs/Si template. To ensure emission in the telecom C-band (∼1550 nm), a metamorphic buffer layer approach is utilized. We show that the deposited single QDs show similar performance to their counterparts directly grown on the well-established GaAs platform. Our results demonstrate that on-demand telecom emitters can be directly and effectively integrated on silicon, without compromises on the performances of either the platforms.

Long-distance quantum communication relies on interfacing qubits with telecom-band photons. Here the authors implement a solid-state spin-qubit based on a hole confined in a semiconductor quantum dot emitting photons in the telecom C-band.

User-friendly single-photon sources with high photon-extraction efficiency are crucial building blocks for photonic quantum applications. For many of these applications, such as long-distance quantum key distribution, the use of single-mode optical fibers is mandatory, which leads to stringent requirements regarding the device design and fabrication. We report on the on-chip integration of a quantum dot (QD) microlens with a 3D-printed micro-objective in combination with a single-mode on-chip fiber coupler. The practical quantum device is realized by the deterministic fabrication of the QD-microlens via in situ electron-beam lithography and the 3D two-photon laser writing of the on-chip micro-objective and fiber chuck. A QD with a microlens is an efficient single-photon source, whose emission is collimated by the on-chip micro-objective. A second polymer microlens is located at the end facet of the single-mode fiber and ensures that the collimated light is efficiently coupled into the fiber core. For this purpose, the fiber is placed in an on-chip fiber chuck, which is precisely aligned to the QD-microlens thanks to the sub-micrometer processing accuracy of high-resolution two-photon direct laser writing. The resulting quantum device has a broadband photon extraction efficiency, a single-mode fiber-coupling efficiency of 22%, a measured single-photon flux of 42 kHz (8.9 kHz) under cw (pulsed) optical excitation, which corresponds to 1.5 MHz (0.3 MHz) at the single-mode fiber output, and a multi-photon probability in terms of g(2)(0) = 0.00±0.000.04 (0.13 ± 0.05) under cw (pulsed) optical excitation. The stable design of the developed fiber-coupled quantum device makes it highly attractive for integration into user-friendly plug-and-play quantum applications.

Hybrid quantum systems combine efficient high-quality quantum dot sources with atomic vapours that can serve as precise frequency standards or quantum memories. Here, Portalupi et al. demonstrate an optimized atomic Cs-Faraday filter working with single photons emitted from a semiconductor quantum dot.