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Abstract Plasmonic waveguides allow focusing, guiding, and manipulating light at the nanoscale and promise the miniaturization of functional optical nanocircuits. Dielectric-loaded plasmonic (DLP) waveguides and logic gates have drawn attention because of their relatively low loss, easy fabrication, and good compatibility with gain and active tunable materials. However, the rather low on/off ratio of DLP logic gates remains the main challenge. Here, we introduce an amplitude modulator and theoretically demonstrate an enhanced on/off ratio of a DLP logic gate for XNOR operation. Multimode interference (MMI) in DLP waveguide is precisely calculated for the design of the logic gate. Multiplexing and power splitting at arbitrary multimode numbers have been theoretically analyzed with respect to the size of the amplitude modulator. An enhanced on/off ratio of 11.26 dB has been achieved. The proposed amplitude modulator can also be used to optimize the performance of other logic gates or MMI-based plasmonic functional devices.

In this report, we introduce a 1D photonic crystal (PhC) nanocavity with waveguide-like strain amplifiers within a soft polydimethylsiloxane substrate, presenting it as a potential candidate for highly sensitive pressure and position optical sensors. Due to its substantial optical wavelength response to uniform pressure, laser emission from this nanocavity enables the detection of a minimum applied uniform pressure of 1.6‰ in experiments. Based on this feature, we further studied and elucidated the distinct behaviors in wavelength shifts when applying localized pressure at various positions relative to the PhC nanocavity. In experiments, by mapping wavelength shifts of the PhC nanolaser under localized pressure applied using a micro-tip at different positions, we demonstrate the nanocavity’s capability to detect minute position differences, with position-dependent minimum resolutions ranging from tens to hundreds of micrometers. Furthermore, we also propose and validate the feasibility of employing the strain amplifier as an effective waveguide for extracting the sensing signal from the nanocavity. This approach achieves a 64% unidirectional coupling efficiency for leading out the sensing signal to a specific strain amplifier. We believe these findings pave the way for creating a highly sensitive position-sensing module that can accurately identify localized pressure in a planar space.

Abstract In recent years, the process requirements of nano-devices have led to the gradual reduction in the scale of semiconductor devices, and the consequent non-negligible sidewall defects caused by etching. Since plasma-enhanced chemical vapor deposition can no longer provide sufficient step coverage, the characteristics of atomic layer deposition ALD technology are used to solve this problem. ALD utilizes self-limiting interactions between the precursor gas and the substrate surface. When the reactive gas forms a single layer of chemical adsorbed on the substrate surface, no reaction occurs between them and the growth thickness can be controlled. At the Å level, it can provide good step coverage. In this study, recent research on the ALD passivation on micro-light-emitting diodes and vertical cavity surface emitting lasers was reviewed and compared. Several passivation methods were demonstrated to lead to enhanced light efficiency, reduced leakage, and improved reliability.

Abstract We have studied the characteristics of frequency response at 850-nm GaAs high-speed vertical-cavity surface-emitting lasers (VCSELs) with different kinds of oxide aperture sizes and cavity length using the PICS3D simulation program. Using 5-μm oxide aperture sizes, the frequency response behavior can be improved from 18.4 GHz and 15.5 GHz to 21.2 GHz and 19 GHz in a maximum of 3 dB at 25 °C and 85 °C, respectively. Numerical simulation results also suggest that the frequency response performances improved from 21.2 GHz and 19 GHz to 30.5 GHz and 24.5 GHz in a maximum of 3 dB at 25 °C and 85 °C due to the reduction of cavity length from 3λ/2 to λ/2. Consequently, the high-speed VCSEL devices were fabricated on a modified structure and exhibited 50-Gb/s data rate at 85 °C.

For manipulating nanoparticles, we propose a nanotweezer named plasmonic bowtie notch (PBN) by adding a thin metal film to the bottom of plasmonic bowtie aperture. The PBN can exert a large trapping force on nanoparticle because the enhanced field of resonance mode can be much accessed by nanoparticle. The optical properties and factors influencing trapping force of PBN are fully investigated and discussed. The optimized PBN shows an excellent trapping capability with ultralow threshold excitation intensity of 0.64 mW/μm2 for stable trapping of a 100 nm polystyrene particle. In addition, it provides a label-free detection of the trapped particle by observing the extinction spectrum. The sensitivity to trapped target size of 71 pm redshift in peak wavelength per 1 nm increase of particle size is relatively high compared with those obtained from most near-field tweezers. Furthermore, the footprint of PBN is only 200 nm × 220 nm. The capabilities of the proposed design show a great potential in the application of nanoparticle trapping and sensing.

For manipulating nano-bio-specimens, we propose a tweezing device by integrating a triangular-shaped photonic-plasmonic nano-taper on top of a coupling waveguide. The device can exert strong trapping force on nano-particle owing to efficient optical energy usage and accessible field distribution. Working principle and optical characteristics of the device are fully investigated and discussed. The optimized device shows an excellent trapping capability with low threshold power of 3.57 mW for stable trapping n 100 nm polystyrene particle. Simple geometry and high tolerance to pattern misalignment between trap unit and coupling waveguide are beneficial for realistic fabrication. Furthermore, the footprint of trap unit is only 400 nm × 625 nm. We believe this design will be very useful to the development of lab-on-a-chip system.

Abstract High-brightness white-light-emitting diodes (w-LEDs) with excellent color quality is demonstrated by using nontoxic nanomaterials. Previously, we have reported the high color quality w-LEDs with heavy-metal phosphor and quantum dots (QDs), which may cause environmental hazards. In the present work, liquid-type white LEDs composed of nontoxic materials, named as graphene and porous silicon quantum dots are fabricated with a high color rendering index (CRI) value gain up to 95. The liquid-typed device structure possesses minimized surface temperature and 25% higher value of luminous efficiency as compare to dispensing-typed structure. Further, the as-prepared device is environment friendly and attributed to low toxicity. The low toxicity and high R9 (87) component values were conjectured to produce new or improve current methods toward bioimaging application.

Abstract Perovskite quantum dots (PQDs) are a competitive candidate for next‐generation display technologies as a result of their superior photoluminescence, narrow emission, high quantum yield, and color tunability. However, due to poor thermal resistance and instability under high energy radiation, most PQD‐based white light‐emitting diodes (LEDs) show only modest luminous efficiency of ≈50 lm W−1 and a short lifetime of

In this report, using two-dimensional photonic crystals (PhC) and a one-dimensional PhC nano-beam cavity, we realized the development of all-polymeric dye-lasers on a dye-doped, suspended poly-methylmethacrylate film with a wavelength-scale thickness. In addition to the characterization of basic lasing properties, we also evaluated its capacity to serve as an attachable strain sensor. Through experimentation, we confirmed the stable lasing performances of the dye-laser attaching on a rough surface. Moreover, we also theoretically studied the wavelength responses of the utilized PhC resonators to stretching strain and further improved them via the concept of strain shaping. The attachability and high strain sensing response of the presented thin film PhC dye-lasers demonstrate their potential as attachable strain sensors.

In this study, by combining a large-area MoS2 monolayer with silver plasmonic nanostructures in a deformable polydimethylsiloxane substrate, we theoretically and experimentally studied the photoluminescence (PL) enhancement of MoS2 by surface lattice resonance (SLR) modes of different silver plasmonic nanostructures. We also observed the stable PL enhancement of MoS2 by silver nanodisc arrays under differently applied stretching strains, caused by the mechanical holding effect of the MoS2 monolayer. We believe the results presented herein can guarantee the possibility of stably enhancing the light emission of transition metal dichalcogenides using SLR modes in a deformable platform.

High-quality epitaxial layers are directly related to internal quantum efficiency. The methods used to design such epitaxial layers are reviewed in this article. The ultraviolet C (UVC) light-emitting diode (LED) epitaxial layer structure exhibits electron leakage; therefore, many research groups have proposed the design of blocking layers and carrier transportation to generate high electron–hole recombination rates. This also aids in increasing the internal quantum efficiency. The cap layer, p-GaN, exhibits high absorption in deep UV radiation; thus, a small thickness is usually chosen. Flip chip design is more popular for such devices in the UV band, and the main factors for consideration are light extraction and heat transportation. However, the choice of encapsulation materials is important, because unsuitable encapsulation materials will be degraded by ultraviolet light irradiation. A suitable package design can account for light extraction and heat transportation. Finally, an atomic layer deposition Al2O3 film has been proposed as a mesa passivation layer. It can provide a low reverse current leakage. Moreover, it can help increase the quantum efficiency, enhance the moisture resistance, and improve reliability. UVC LED applications can be used in sterilization, water purification, air purification, and medical and military fields.

To realize high-efficiency, AlGaN-based, deep-ultraviolet light-emitting diodes (DUV-LEDs), enhancing their light-extraction efficiency and reducing thermal resistance is very crucial. We proposed a liquid packaging structure that could enhance optical power by 27.2% and 70.7% for flat type and lens type 281-nm DUV-LEDs, respectively. A significant improvement effect at different wavelengths, such as 268 nm and 310 nm, was also observed. Furthermore, using the liquid packaging structure, the thermal resistance was reduced by 30.3% compared to the conventional structure. Finally, the reliability of liquid packaging DUV-LEDs was tested. The light output maintenance of liquid packaging DUV-LEDs was compared to the conventional structure.

In this study, we theoretically designed and experimentally fabricated an InGaN vertical-cavity surface-emitting laser (VCSEL) with a tunnel junction (TJ) structure. From numerical simulation results, the optical loss of the device can be reduced by a TJ structure. Additionally, the leakage current of the VCSEL with TJ structure was much smaller than that of the VCSEL with an Indium-Tin-Oxide (ITO) layer. We have been demonstrated that laser output performance is improved by using the TJ structure when compared to the typical VCSEL structure of the ITO layer. The output power obtained at 2.1 mW was enhanced by a factor of 3.5 by the successful reduction of threshold current density (Jth) from 12 to 8.5 kA/cm2, and the enlarged slope efficiency was due to less absorption in VCSEL with a TJ structure. Finally, the samples passed the high temperature (70 °C) and high operation current (1.5 × Jth) test for over 500 h.

In this study, we present a novel type of package, freeform-designed chip scale package (FDCSP), which has ultra-high light extraction efficiency and bat-wing light field. For the backlight application, mainstream solutions are chip-scale package (CSP) and surface-mount device package (SMD). Comparing with these two mainstream types of package, the light extraction efficiency of CSP, SMD, and FDCSP are 88%, 60%, and 96%, respectively. In addition to ultra-high light extraction efficiency, because of the 160-degree bat-wing light field, FDCSP could provide a thinner and low power consumption mini-LED solution with a smaller number of LEDs than CSP and SMD light source array.

This study demonstrates that flexible white LEDs, doped with diffusion particles and with a square column structure, have excellent luminosity, uniformity, and bending reliability. This large area (5 cm × 5 cm) square column flexible device had a smaller thickness (2 mm), and enhancements in both luminous efficiency (29.5%) and uniformity (44.6%) compared to the characteristics of the 6 mm reference sample. Optimization of the reflective layer coating for the square column, flexible white LED was achieved with a higher luminous efficiency (171 lm/w) and uniformity (92%). We designed a novel lightning bolt electrode to improve reliability and bendability. After the bending test, the blue flexible LED had a lower bending diameter (10 mm) but more bending circles (increased to 2000 times.

The GaN-based high-voltage flip chip light-emitting diode (HVFC-LED) is designed and developed for the purpose of efficiency enhancement. In our design, the distributed Bragg reflector (DBR) is deposited at the bonded substrate to increase the light extraction. After the flip chip process, the general current-voltage characteristics between the flip chip sample and the traditional sample are essentially the same. With the help of great thermal conductive silicon substrate and the bottom DBR, the HVFC-LED is able to enhance the power by 37.1% when compared to the traditional high-voltage LEDs. The wall-plug efficiencies of the HVFC-LED also show good droop reduction as high as 9.9% compared to the traditional devices.