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The continuous evolution of chip manufacturing demands the development of materials with ultra-low dielectric constants. With advantageous dielectric and mechanical properties, initiated chemical vapor deposited (iCVD) poly(1,3,5-trimethyl-1,3,5-trivinyl cyclotrisiloxane) (pV _3 D _3 ) emerges as a promising candidate. However, previous works have not explored etching for this cyclosiloxane polymer thin film, which is indispensable for potential applications to the back-end-of-line fabrication. Here, we developed an etching process utilizing O _2 /Ar remote plasma for cyclic removal of iCVD pV _3 D _3 thin film at sub-nanometer scale. We employed in-situ quartz crystal microbalance to investigate the process parameters including the plasma power, plasma duration and O _2 flow rate. X-ray photoelectron spectroscopy and cross-sectional microscopy reveal the formation of an oxidized skin layer during the etching process. This skin layer further substantiates an etching mechanism driven by surface oxidation and sputtering. Additionally, this oxidized skin layer leads to improved elastic modulus and hardness and acts as a barrier layer for protecting the bottom cyclosiloxane polymer from further oxidation.

Optimization of equipment structure and process conditions is essential to obtain thin films with the required properties, such as film thickness, trapped charge density, leakage current, and memory characteristics, that ensure reliability of the corresponding device. In this study, we fabricated metal–insulator–semiconductor (MIS) structure capacitors using HfO2 thin films separately deposited by remote plasma (RP) atomic layer deposition (ALD) and direct-plasma (DP) ALD and determined the optimal process temperature by measuring the leakage current and breakdown strength as functions of process temperature. Additionally, we analyzed the effects of the plasma application method on the charge trapping properties of HfO2 thin films and properties of the interface between Si and HfO2. Subsequently, we synthesized charge-trapping memory (CTM) devices utilizing the deposited thin films as charge-trapping layers (CTLs) and evaluated their memory properties. The results indicated excellent memory window characteristics of the RP-HfO2 MIS capacitors compared to those of the DP-HfO2 MIS capacitors. Moreover, the memory characteristics of the RP-HfO2 CTM devices were outstanding as compared to those of the DP-HfO2 CTM devices. In conclusion, the methodology proposed herein can be useful for future implementations of multiple levels of charge-storage nonvolatile memories or synaptic devices that require many states.

Hf0.5Zr0.5O2 (HZO) thin film exhibits ferroelectric properties and is presumed to be suitable for use in next-generation memory devices because of its compatibility with the complementary metal–oxide–semiconductor (CMOS) process. This study examined the physical and electrical properties of HZO thin films deposited by two plasma-enhanced atomic layer deposition (PEALD) methods— direct plasma atomic layer deposition (DPALD) and remote plasma atomic layer deposition (RPALD)—and the effects of plasma application on the properties of HZO thin films. The initial conditions for HZO thin film deposition, depending on the RPALD deposition temperature, were established based on previous research on HZO thin films deposited by the DPALD method. The results show that as the measurement temperature increases, the electric properties of DPALD HZO quickly deteriorate; however, the RPALD HZO thin film exhibited excellent fatigue endurance at a measurement temperature of 60 °C or less. HZO thin films deposited by the DPALD and RPALD methods exhibited relatively good remanent polarization and fatigue endurance, respectively. These results confirm the applicability of the HZO thin films deposited by the RPALD method as ferroelectric memory devices.

The objective of this study is to investigate the synthesis and influence of MoS2 on carbon nanowalls (CNWs) as supercapacitor electrodes. The synthesis of MoS2 on CNW was achieved by the introduction of hydrogen remote plasma from ammonium tetrathiomolybdate (ATTM) without deterioration of the CNWs. The topographical surface structures and electrochemical characteristics of the MoS2–CNW composite electrodes were explored using two ATTM-dispersed organic solvents—acetonitrile and dimethylformamide (DMF). In this study, CNW and MoS2 were synthesized using an electron cyclotron resonance plasma. However, hydrogen radicals, which transform ATTM into MoS2, were provided in the form of a remote plasma source. The electrochemical performances of MoS2–CNW hybrid electrodes with various morphologies—depending on the solvent and ATTM concentration—were evaluated using a three-electrode system. The results revealed that the morphology of the synthesized MoS2 was influenced by the organic solvent used and affected both the electrochemical performance and topographical characteristics. Notably, considerable enhancement of the specific capacitance was observed for the MoS2 with open top edges synthesized from DMF. These encouraging results may motivate additional research on hybrid supercapacitor electrodes and the rapid synthesis of MoS2 and other transition metal dichalcogenides.

Silicon nitride (SiNx) thin films using 1,3-di-isopropylamino-2,4-dimethylcyclosilazane (CSN-2) and N2 plasma were investigated. The growth rate of SiNx thin films was saturated in the range of 200−500 °C, yielding approximately 0.38 Å/cycle, and featuring a wide process window. The physical and chemical properties of the SiNx films were investigated as a function of deposition temperature. As temperature was increased, transmission electron microscopy (TEM) analysis confirmed that a conformal thin film was obtained. Also, we developed a three-step process in which the H2 plasma step was introduced before the N2 plasma step. In order to investigate the effect of H2 plasma, we evaluated the growth rate, step coverage, and wet etch rate according to H2 plasma exposure time (10−30 s). As a result, the side step coverage increased from 82% to 105% and the bottom step coverages increased from 90% to 110% in the narrow pattern. By increasing the H2 plasma to 30 s, the wet etch rate was 32 Å/min, which is much lower than the case of only N2 plasma (43 Å/min).