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Single event upset, or Single Event Effect (SEE) is increasingly important as semiconductor devices are entering into nano-meter scale. The Linear Energy Transfer (LET) concept is commonly used to estimate the rate of SEE. The SEE, however, should be related to energy deposition of each stochastic event, but not LET which is a non-stochastic quantity. Instead, microdosimetry, which uses a lineal calculation of energy lost per step for each specific track, should be used to replace LET to predict microelectronic failure from SEEs. Monte Carlo simulation is used for the demonstration, and there are several parameters needed to optimise for SEE simulation, such as the target size, physical models and scoring techniques. We also show the thickness of the sensitive volume, which also correspond to the size of a device, will change the spectra of lineal energy. With a more comprehensive Monte Carlo simulation performed in this work, we also show and explain the differences in our results and the reported results such as those from Hiemstra et al. which are commonly used in semiconductor industry for the prediction of SEE in devices.

Neutron radiation on advanced integrated circuits (ICs) is becoming important for their reliable operation. However, a neutron test on ICs is expensive and time-consuming. In this work, we employ Monte Carlo simulation to examine if a proton test can replace or even accelerate the neutron test, and we found that 200 MeV protons are the closest to resembling neutron radiation with five main differences. This 200 MeV concur with the suggestion from National Aeronautics and Space Administration (NASA, Washington, DC, USA). However, the impacts of the five differences on single event effects (SEEs) require future work for examination.