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Author(s): H. Dery (corresponding author) [1]; P. Dalal [1]; Ł. Cywiński [1]; L. J. Sham [1] Research in semiconductor spintronics aims to extend the scope of conventional electronics by using [...]

The time dependent response of spin diffusion to light stimulation in a realistic lateral structure, which leads to a simple spintronics-based scheme for the electrical measurement of circular light polarization is investigated. The results imply that spin accumulation in short channels could be tracked in time with relatively high time resolution when the Schottky barriers and the geometry are designed properly.

An experiment was conducted to study the temperature dependence of the coupling between n-type delta-doping regions. It was demonstrated that at room temperature the main coupling mechanism between an n-type delta-doping region and an adjacent plane of dots is energy-conserving electron-electron scattering, in which a hot electron in the delta-doping region transfers energy to a deeply confined electron in that region and relaxes to the quantum dot.

A theoretical model for the inhomogeneously broadened gain of an assembly of quantum wires assembly and a technique to analyze the gain of an optical amplifier using bias dependent room temperature amplified spectra are developed. The proposed procedure together with the theoretical model are used to demonstrate that InAs/InP quantum dash structures have wirelike characteristics.