1. Aluminum gettering of cobalt in silicon
- Author
-
Apel, M., Hanke, I., Schindler, R., and Schroter, W.
- Subjects
Semiconductors -- Impurity distribution ,Aluminum -- Analysis ,Physics - Abstract
Mossbauer spectroscopy and radiotracer analysis of the influence of evaporated aluminium layer gettering on cast multicrystalline and single crystalline radioactive cobalt-57-doped silicon reveal that Al gettering is operational at high temperatures and transports the cobalt atoms in Si bulk to the liquid A1-Si phase. The metallic impurity in the liquid Al-Si phase has a high solubility that enables the elucidation of Al gettering as a segregation mechanism.
- Published
- 1994