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The process of photoelectrochemical etching is employed to comparatively study the properties of nanotextured high density Mg-doped and undoped GaN in the temperature dependent photoluminescence (PL). The analysis reveals that an increase in the potential fluctuation created by the nanotexurization process increases the carrier localization in the substances, which explains the observed asymmetric S-shaped behavior in the GaN compounds.

The effect of annealing on nanoparticulate CdS film on silicon substrate deposited by hybrid Langmuir-Blodgett chemical bath deposition method is examined. The photoluminescence (PL) and Raman results have shown the phase transformation of nanoparticulate hexagonal CdS film to bulklike cubic CdS film on annealing at 500 [degree]C, unlike cubic to hexagonal structural phase transition seen in bulk CdS films.

A comparative study is conducted to examine the effects of irradiation by swift heavy ions (SHIs) on thin films of [C.sub.60]. The results are used to derive quantitative formula to obtain fraction of polymer/damaged [C.sub.60] molecules at any given fluence and predict the fluence and ion species required for a given amount of polymerization/damage or vice versa.

The structural and transport profiles of C60 by 110MeV, Ni ion irradiation at different fluences is presented. The pristine and irradiated samples were investigated using Raman spectroscopy, electrical conductivity, and optical absorption spectroscopy.