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Your search keyword '"Jammy, R."' showing total 6 results
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6 results on '"Jammy, R."'

2. Gate-first integration of tunable work function metal gates of different thicknesses into high- k/metal gates CMOS FinFETs for multi-Vth engineering

Author

Hussain, M.M., Smith, C.E., Harris, H.R., Young, C.D., Hsing-Huang Tseng, and Jammy, R.

Subjects
Complementary metal oxide semiconductors -- Usage, Field-effect transistors -- Design and construction, Gates (Electronics) -- Analysis, Titanium compounds -- Electric properties, Titanium compounds -- Structure, Business, Electronics, Electronics and electrical industries
Published
2010

3. Analyzing noise in modern MOSFETs

Author

Veksler, D., Park, H., Young, C., Taylor, B., Bersuker, G., and Jammy, R.

Subjects
Metal oxide semiconductor field effect transistors -- Product information, Semiconductor industry -- Product information, Semiconductor industry, Business, Electronics and electrical industries
Abstract

EXECUTIVE OVERVIEW In highly-scaled MOS devices, performance might be affected by individual atomic-scale features of the device structure, such as the position of the dopant atoms in the transistor channel [...]

Published
2010

4. Processing and characterization of Ag-clad Bi-2223 superconductors

Author

Balachandran, U., Iyer, A.N., Jammy, R., Chudzik, M., Lelovic, M., Krishnaraj, P., Eror, N.G., and Haldar, P.

Subjects
Magnets -- Research, High temperature superconductors -- Research, Electric transformers -- Research, Business, Electronics, Electronics and electrical industries
Abstract

The powder-in-tube method was utilized in fabricating high-quality long-length mono- and multi-filament Bi2223 conductors, with particular emphasis on careful control of processing parameters. A 1,260-meter-long multifilament conductor with 37 monocore filaments exhibited a critical current density of up to 1.2x10(super 4) Acm-2 at 77 K. The conductor was then used for characterizing a prototype transformer and a high temperature superconducting magnet.

Published
1997

6. Strain-enhanced scaling of HK+MG CMOSFETs

Author

Song, S.C., Hussain, M.M., Burham, C., Park, C.S., Lee, B.H., and Jammy, R.

Subjects
Semiconductor industry, Metal oxide semiconductor field effect transistors -- Analysis, Semiconductor industry -- Analysis
Abstract

EXECUTIVE OVERVIEW Recent advancement in high-k and metal gate (HK+MG) technology has allowed improvements in gate control owing to the aggressive scaling of equivalent oxide thickness (EOT), which has not […]

Published
2007

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