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1. Detailed investigation of the conducting channel in poly(3-hexylthiophene) field effect transistors

Author

von Hauff, Elizabeth, Johnen, Fabian, Tunc, Ali Veysel, Govor, Leonid, and Parisi, Jurgen

Subjects
Voltage -- Measurement, Field-effect transistors -- Design and construction, Thiophene -- Electric properties, Thiophene -- Structure, Physics
Abstract

Several studies are conducted to study the conducting channel present in the various poly(3-hexylthiophene) (P3HT) field effect transistors (OEFTs). The thickness of the P3HT layer is shown to be the main factor that determined the performance of the OEFTs.

Published
2010

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