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1. Velocity enhancement of cryogenically cooled InP-based HEMTs on (411)A-oriented substrates

Author

Watanabe, Issei, Shinohara, Keisuke, Matsui, Toshiaki, Kitada, Takahiro, Shimomura, Satoshi, Mimura, Takashi, Yamashita, Yoshimi, and Endoh, Akira

Subjects
High-electron-mobility transistors -- Design and construction, Indium -- Electric properties, Phosphorus compounds -- Electric properties, Business, Electronics, Electronics and electrical industries
Abstract

In0.75Ga0.25As/In0.52Al0.48As high electron mobility transistors (HEMTs) on (411)A-oriented InP substrates is developed using molecular beam epitaxy (MBE) and their dc and RF characteristics at room and cryogenic temperatures are investigated. Delay-time analysis is conducted to investigate the causes of the high maximum transconductance, [g.sub.m max], of 2.25 S/mm and a cutoff frequency, [f.sub.T] of 310 GHz at 16 K for the 195-nm gate HEMT fabricated on the (411)A InP substrate.

Published
2006

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